Yongjin Park
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Defect-induced loading of Pt nanoparticles on carbon nanotubes
SJ Kim, YJ Park, EJ Ra, KK Kim, KH An, YH Lee, JY Choi, CH Park, ...
Applied physics letters 90 (2), 2007
Restorable type conversion of carbon nanotube transistor using pyrolytically controlled antioxidizing photosynthesis coenzyme
BR Kang, WJ Yu, KK Kim, HK Park, SM Kim, Y Park, G Kim, HJ Shin, ...
Advanced Functional Materials 19 (16), 2553-2559, 2009
Selective oxidation on metallic carbon nanotubes by halogen oxoanions
SM Yoon, SJ Kim, HJ Shin, A Benayad, SJ Choi, KK Kim, SM Kim, YJ Park, ...
Journal of the American Chemical Society 130 (8), 2610-2616, 2008
Adsorption and dissociation of hydrogen molecules on a Pt atom on defective carbon nanotubes
Y Park, G Kim, YH Lee
Applied Physics Letters 92 (8), 2008
Structure and magnetism of small Gd and Fe nanoclusters:< span>< img height=
G Kim, Y Park, MJ Han, J Yu, C Heo, YH Lee
Solid State Communications 149 (45), 2058-2060, 2009
Adsorption of Pt on defective carbon nanotube walls: a DFT approach
Y Park, RJWE Lahaye, YH Lee
Computer physics communications 177 (1-2), 46-46, 2007
First-principles studies of the electronic and dielectric properties of Si/SiO2/HfO2 interfaces
Y Park, K Kong, H Chang, M Shin
Japanese Journal of Applied Physics 52 (4R), 041803, 2013
Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations
M Shin, Y Park, K Kong, H Chang
Applied Physics Letters 98 (17), 2011
Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations
Y Park, K Kong, H Chang, M Shin
10th IEEE International Conference on Nanotechnology, 1109-1112, 2010
Device characteristics of double-gate MOSFETs with Si-dielectric interface model from first principle calculations
Y Park, K Kong, H Chang, M Shin
2010 Silicon Nanoelectronics Workshop, 1-2, 2010
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Articles 1–10