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Plamen P. Paskov
Plamen P. Paskov
Linkoping University, Sweden and ECE NCSU, USA
Verified email at liu.se
Title
Cited by
Cited by
Year
Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition
PP Paskov, R Schifano, B Monemar, T Paskova, S Figge, D Hommel
Journal of Applied Physics 98 (9), 2005
2602005
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
B Arnaudov, T Paskova, PP Paskov, B Magnusson, E Valcheva, ...
Physical Review B 69 (11), 115216, 2004
2352004
Evidence for two Mg related acceptors in GaN
BO Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ...
Physical review letters 102 (23), 235501, 2009
1482009
Recombination of free and bound excitons in GaN
B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina, ...
physica status solidi (b) 245 (9), 1723-1740, 2008
1422008
Optical properties of InN—the bandgap question
B Monemar, PP Paskov, A Kasic
Superlattices and Microstructures 38 (1), 38-56, 2005
1332005
Anisotropic strain and phonon deformation potentials in GaN
V Darakchieva, T Paskova, M Schubert, H Arwin, PP Paskov, B Monemar, ...
Physical Review B 75 (19), 195217, 2007
1242007
Photoluminescence up-conversion in InAs/GaAs self-assembled quantum dots
PP Paskov, PO Holtz, B Monemar, JM Garcia, WV Schoenfeld, PM Petroff
Applied Physics Letters 77 (6), 812-814, 2000
1232000
Refractive indices of InSb, InAs, GaSb, InAsSb, and InGaSb: Effects of free carriers
PP Paskov
Journal of applied physics 81 (4), 1890-1898, 1997
1001997
Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
M Slomski, N Blumenschein, PP Paskov, JF Muth, T Paskova
Journal of Applied Physics 121 (23), 2017
892017
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
C Roder, S Einfeldt, S Figge, T Paskova, D Hommel, PP Paskov, ...
Journal of applied physics 100 (10), 2006
892006
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ...
Journal of crystal growth 281 (1), 55-61, 2005
812005
Polarized photoluminescence study of free and bound excitons in free-standing GaN
PP Paskov, T Paskova, PO Holtz, B Monemar
Physical Review B 70 (3), 035210, 2004
602004
Properties of the main Mg-related acceptors in GaN from optical and structural studies
B Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ...
Journal of Applied Physics 115 (5), 2014
572014
Deformation potentials of the and modes of InN
V Darakchieva, PP Paskov, E Valcheva, T Paskova, B Monemar, ...
Applied physics letters 84 (18), 3636-3638, 2004
572004
Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy
V Darakchieva, PP Paskov, T Paskova, E Valcheva, B Monemar, ...
Applied physics letters 82 (5), 703-705, 2003
532003
Transient photoluminescence of shallow donor bound excitons in GaN
B Monemar, PP Paskov, JP Bergman, G Pozina, AA Toropov, TV Shubina, ...
Physical Review B 82 (23), 235202, 2010
512010
Phonon mode behavior in strained wurtzite Al N∕ Ga N superlattices
V Darakchieva, E Valcheva, PP Paskov, M Schubert, T Paskova, ...
Physical Review B 71 (11), 115329, 2005
502005
Spin-exchange splitting of excitons in GaN
PP Paskov, T Paskova, PO Holtz, B Monemar
Physical Review B 64 (11), 115201, 2001
492001
Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures–theory and experiment
PP Paskov, M Slomski, JH Leach, JF Muth, T Paskova
AIP advances 7 (9), 2017
482017
Recent developments in the III‐nitride materials
B Monemar, PP Paskov, JP Bergman, AA Toropov, TV Shubina
physica status solidi (b) 244 (6), 1759-1768, 2007
452007
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