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Alaleh Tajalli
Alaleh Tajalli
Verified email at dei.unipd.it
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Year
Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs
I Rossetto, M Meneghini, A Tajalli, S Dalcanale, C De Santi, P Moens, ...
IEEE transactions on electron devices 64 (9), 3734-3739, 2017
1252017
Reliability and failure analysis in power GaN-HEMTs: An overview
M Meneghini, I Rossetto, C De Santi, F Rampazzo, A Tajalli, A Barbato, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 3B-2.1-3B-2.8, 2017
1062017
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
M Meneghini, A Tajalli, P Moens, A Banerjee, E Zanoni, G Meneghesso
Materials Science in Semiconductor Processing 78, 118-126, 2018
1052018
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
A Stockman, E Canato, A Tajalli, M Meneghini, G Meneghesso, E Zanoni, ...
2018 IEEE international reliability physics symposium (IRPS), 4B. 5-1-4B. 5-4, 2018
562018
Vertical breakdown of GaN on Si due to V-pits
S Besendörfer, E Meissner, A Tajalli, M Meneghini, JA Freitas, J Derluyn, ...
Journal of Applied Physics 127 (1), 2020
322020
An analysis of the initiation of upward flashes from tall towers with particular reference to Gaisberg and Säntis Towers
A Smorgonskiy, A Tajalli, F Rachidi, M Rubinstein, G Diendorfer, H Pichler
Journal of Atmospheric and Solar-Terrestrial Physics 136, 46-51, 2015
302015
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
A Tajalli, E Canato, A Nardo, M Meneghini, A Stockman, P Moens, ...
Microelectronics Reliability 88, 572-576, 2018
262018
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: An industry perspective
P Moens, A Banerjee, A Constant, P Coppens, M Caesar, Z Li, ...
ECS Transactions 72 (4), 65, 2016
262016
The effect of proton irradiation in suppressing current collapse in AlGaN/GaN high-electron-mobility transistors
A Stockman, A Tajalli, M Meneghini, MJ Uren, S Mouhoubi, S Gerardin, ...
IEEE Transactions on Electron Devices 66 (1), 372-377, 2018
222018
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron
A Stockman, M Uren, A Tajalli, M Meneghini, B Bakeroot, P Moens
2017 47th European Solid-State Device Research Conference (ESSDERC), 130-133, 2017
212017
Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation
M Meneghini, A Tajalli, P Moens, A Banerjee, A Stockman, M Tack, ...
2017 IEEE International Electron Devices Meeting (IEDM), 33.5. 1-33.5. 4, 2017
192017
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift
S Dalcanale, M Meneghini, A Tajalli, I Rossetto, M Ruzzarin, E Zanoni, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 4B-1.1-4B-1.5, 2017
182017
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications
A Tajalli, M Meneghini, S Besendörfer, R Kabouche, I Abid, R Püsche, ...
Materials 13 (19), 4271, 2020
172020
Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
R Kabouche, I Abid, R Püsche, J Derluyn, S Degroote, M Germain, ...
physica status solidi (a) 217 (7), 1900687, 2020
122020
Analysis of lightning events preceding upward flashes from Gaisberg and Säntis Towers
A Smorgonskiy, A Tajalli, F Rachidi, M Rubinstein, G Diendorfer, H Pichler
2014 International Conference on Lightning Protection (ICLP), 1382-1385, 2014
122014
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
A Tajalli, A Stockman, M Meneghini, S Mouhoubi, A Banerjee, S Gerardin, ...
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
82018
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs
A Tajalli, M Meneghini, I Rossetto, P Moens, A Banerjee, E Zanoni, ...
Microelectronics Reliability 76, 282-286, 2017
72017
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment
A Tajalli, M Borga, M Meneghini, C De Santi, D Benazzi, S Besendörfer, ...
Micromachines 11 (1), 101, 2020
42020
Degradation physics of GaN-based lateral and vertical devices
M Meneghini, C De Santi, A Barbato, M Borga, E Canato, F Chiocchetta, ...
Gallium Nitride Materials and Devices XIV 10918, 63-72, 2019
12019
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
A Tajalli, M Meneghini, G Meneghesso, R Kabouche, I Abid, M Zegaoui, ...
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits …, 2019
2019
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