| Characteristic analysis of resonant-cavity-enhanced (RCE) photodetectors JA Jervase, Y Zebda IEEE journal of quantum electronics 34 (7), 1129-1134, 1998 | 43 | 1998 |
| Monolithically integrated InP-based front-end photoreceivers Y Zebda, R Lai, P Bhattacharya, D Pavlidis, PR Berger, TL Brock IEEE transactions on electron devices 38 (6), 1324-1333, 1991 | 43 | 1991 |
| Resonant tunneling current calculations using the transmission matrix method Y Zebda, AM Kan’an Journal of applied physics 72 (2), 559-563, 1992 | 41 | 1992 |
| AC characteristics of optically controlled MESFET (OPFET) Y Zebda, SA Helweh Journal of lightwave technology 15 (7), 1205-1212, 1997 | 13 | 1997 |
| Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems PK Bhattacharya, Y Zebda, J Singh Applied physics letters 58 (24), 2791-2793, 1991 | 12 | 1991 |
| Performance characteristics of In0. 6Ga0. 4As/In0. 52Al0. 48As modulation‐doped field‐effect transistor monolithically integrated with In0. 53Ga0. 47As p‐i‐n photodiodes Y Zebda, PK Bhattacharya, D Pavlidis, JP Harrang Journal of applied physics 68 (4), 1918-1920, 1990 | 11* | 1990 |
| Currents and current gain analysis of passivated heterojunction bipolar transistors (HBT) Y Zebda, O Qasaimeh IEEE transactions on electron devices 41 (12), 2233-2240, 1994 | 10 | 1994 |
| Transient response of optoelectronic integrated bistable device Y Zebda, M Khodier, B Darwish IEEE Transactions on Electron Devices 45 (1), 85-90, 1998 | 8 | 1998 |
| A new physical model of the light amplifying optical switch (LAGS) Y Zebda, O Qasaimeh IEEE transactions on electron devices 41 (12), 2248-2255, 1994 | 8 | 1994 |
| IEEE Trans. Electron Devices Y Zebda, O Qasaimeh IEEE Trans. Electron Device 41 (2233), 1994 | 6 | 1994 |
| Frequency and time response of PIN photodiode Y Zebda, O Kasaimeh Journal of Optics 22, 85-91, 1993 | 6 | 1993 |
| Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes U Das, Y Zebda, P Bhattacharya, A Chin Applied physics letters 51 (15), 1164-1166, 1987 | 6 | 1987 |
| A modified model of the light amplifying optical switch (LAOS) Y Zebda, O Qasaimeh IEEE journal of quantum electronics 31 (7), 1302-1307, 1995 | 5 | 1995 |
| Design and performance of very high-speed In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As pin photodiodes grown by molecular beam epitaxy Y Zebda, P Bhattacharya, MS Tobin, TB Simpson IEEE electron device letters 8 (12), 579-581, 1987 | 5 | 1987 |
| Minimisation of base transit time in AlGaAs/GaAs heterostructure bipolar transistor (HBT) Y Zebda, A Elnagar, A Hussein IEE Proceedings-Circuits, Devices and Systems 144 (6), 375-377, 1997 | 4 | 1997 |
| Bandwidth improvement of a homojunction pin photodiode Y Zebda, S Abu-Helweh IEEE journal of quantum electronics 33 (8), 1333-1337, 1997 | 4 | 1997 |
| High-Speed Multiquantum Well Avalanche Photodiodes Y Zebda, J Hinckley, P Bhattacharya, J Singh, FY Juang Quantum Wells and Superlattices in Optoelectronic Devices and Integrated …, 1988 | 4 | 1988 |
| Effect of impact ionization coefficient ratio on gain and frequency response of an avalanche photodiode Y Zebda, O Qasaimeh Optics communications 109 (5-6), 422-427, 1994 | 3 | 1994 |
| Monolithically integrated GaAs-based and InP-based front-end photoreceivers WQ Li, Y Zebda, PK Bhattacharya, D Pavlidis, JE Oh, J Pamulapati Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed …, 1989 | 3 | 1989 |
| Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers Y Zebda, R Lipa, M Tutt, D Pavlidis, PK Bhattacharya, J Pamulapati, ... IEEE Transactions on Electron Devices 35 (12), 2435, 1988 | 3 | 1988 |
