Bowing parameter of the band-gap energy of WG Bi, CW Tu Applied Physics Letters 70 (12), 1608-1610, 1997 | 504 | 1997 |
Chemical mapping of semiconductor interfaces at near-atomic resolution A Ourmazd, DW Taylor, J Cunningham, CW Tu Physical review letters 62 (8), 933, 1989 | 385 | 1989 |
Ultrafast phase relaxation of excitons via exciton-exciton and exciton-electron collisions L Schultheis, J Kuhl, A Honold, CW Tu Physical review letters 57 (13), 1635, 1986 | 384 | 1986 |
Collision broadening of two-dimensional excitons in a GaAs single quantum well A Honold, L Schultheis, J Kuhl, CW Tu Physical Review B 40 (9), 6442, 1989 | 361 | 1989 |
Density of states and de haas—van alphen effect in two-dimensional electron systems JP Eisenstein, HL Stormer, V Narayanamurti, AY Cho, AC Gossard, ... Physical review letters 55 (8), 875, 1985 | 354 | 1985 |
Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wells L Schultheis, A Honold, J Kuhl, K Köhler, CW Tu Physical Review B 34 (12), 9027, 1986 | 323 | 1986 |
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy IA Buyanova, WM Chen, G Pozina, JP Bergman, B Monemar, HP Xin, ... Applied physics letters 75 (4), 501-503, 1999 | 322 | 1999 |
Nature of the fundamental band gap in alloys W Shan, W Walukiewicz, KM Yu, J Wu, JW Ager III, EE Haller, HP Xin, ... Applied Physics Letters 76 (22), 3251-3253, 2000 | 318 | 2000 |
Donor neutralization in GaAs (Si) by atomic hydrogen J Chevallier, WC Dautremont‐Smith, CW Tu, SJ Pearton Applied physics letters 47 (2), 108-110, 1985 | 284 | 1985 |
GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy HP Xin, CW Tu Applied physics letters 72 (19), 2442-2444, 1998 | 277 | 1998 |
Lifetime enhancement of two-dimensional excitons by the quantum-confined Stark effect HJ Polland, L Schultheis, J Kuhl, EO Göbel, CW Tu Physical review letters 55 (23), 2610, 1985 | 250 | 1985 |
Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs M Sopanen, HP Xin, CW Tu Applied Physics Letters 76 (8), 994-996, 2000 | 226 | 2000 |
Photonic-wire laser JP Zhang, DY Chu, SL Wu, ST Ho, WG Bi, CW Tu, RC Tiberio Physical review letters 75 (14), 2678, 1995 | 224 | 1995 |
Direct determination of electron effective mass in GaNAs/GaAs quantum wells PN Hai, WM Chen, IA Buyanova, HP Xin, CW Tu Applied Physics Letters 77 (12), 1843-1845, 2000 | 214 | 2000 |
Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wells DY Oberli, J Shah, TC Damen, CW Tu, TY Chang, DAB Miller, JE Henry, ... Physical Review B 40 (5), 3028, 1989 | 214 | 1989 |
Hydrogenation of shallow‐donor levels in GaAs SJ Pearton, WC Dautremont‐Smith, J Chevallier, CW Tu, KD Cummings Journal of applied physics 59 (8), 2821-2827, 1986 | 212 | 1986 |
Picosecond phase coherence and orientational relaxation of excitons in GaAs L Schultheis, J Kuhl, A Honold, CW Tu Physical review letters 57 (14), 1797, 1986 | 206 | 1986 |
Effects of nitrogen on the band structure of alloys HP Xin, CW Tu, Y Zhang, A Mascarenhas Applied Physics Letters 76 (10), 1267-1269, 2000 | 191 | 2000 |
Plasmon and magnetoplasmon excitation in two-dimensional electron space-charge layers on GaAs E Batke, D Heitmann, CW Tu Physical Review B 34 (10), 6951, 1986 | 189 | 1986 |
Formation of an impurity band and its quantum confinement in heavily doped GaAs: N Y Zhang, A Mascarenhas, HP Xin, CW Tu Physical Review B 61 (11), 7479, 2000 | 182 | 2000 |