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Nalan BARAZ
Nalan BARAZ
Gölyaka Meslek Yüksekokulu Düzce Üniversitesi
Verified email at duzce.edu.tr
Title
Cited by
Cited by
Year
Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures
N Baraz, İ Yücedağ, Y Azizian-Kalandaragh, Ş Altındal
Journal of Materials Science: Materials in Electronics 28, 1315-1321, 2017
482017
Electric and dielectric properties of Au/ZnS-PVA/n-Si (MPS) structures in the frequency range of 10–200 kHz
N Baraz, İ Yücedağ, Y Azizian-Kalandaragh, G Ersöz, I Orak, Ş Altındal, ...
Journal of Electronic Materials 46, 4276-4286, 2017
402017
Hydrogenic impurity states in zinc-blende In x Ga 1− x N/GaN in cylindrical quantum well wires under hydrostatic pressure
NB P Baser, S Elagoz
Physica E: Low-Dimensional Systems and Nanostructures Cilt 44 44 (2), 356-360, 2011
29*2011
Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage
N Baraz, İ Yücedağ, Y Azizian-Kalandaragh, Ş Altındal
Journal of Materials Science: Materials in Electronics 29, 12735-12743, 2018
142018
Controlling the electrical characteristics of Au/n‐Si structure with and without (biphenyl‐CoPc) and (OHSubs‐ZnPc) interfacial layers at room temperature
N Baraz, İ Yücedağ, A Demir, G Ersöz, Ş Altındal, M Kandaz
Polymers for Advanced Technologies 28 (8), 952-957, 2017
62017
Azizian-Kalandaragh, S Altındal
N Baraz, Y IYücedag
J. Mater. Sci 28, 1315, 2017
62017
A comparative study on the main electrical parameters of Au/n-Si, Au/biphenyl-CuPc/n-Si/and Au/biphenylsubs-CoPc/n-Si/type Schottky barrier diodes
A Demir, İG Yücedağ, G Ersöz, Ş Altındal, N Baraz, M Kandaz
Journal of Nanoelectronics and Optoelectronics 11 (5), 620-625, 2016
42016
GaN/InxGa1-xN silindirik kuantum telinde verici safsızlık enerji düzeyleri
N Baraz
Fen Bilimleri Enstitüsü, 2012
22012
DOKTORA TEZİ ELEKTRİK-ELEKTRONİK VE BİLGİSAYAR MÜHENDİSLİĞİ ANABİLİM DALI
E BİR, N BARAZ
Controlling the electrical characteristics of Au n Si structure with biphenyl CoPc and OHSubsZnPc and without interfacial layer
N BARAZ, İ YÜCEDAĞ, D AHMET, E GÜLÇİN, Ş ALTINDAL
Determining electrical and dielectric properties dependence on various frequencies of Al ZnS PVA p Si MPS structures
N BARAZ, İ YÜCEDAĞ, Y AzizianKalandaragh, Ş ALTINDAL
A comparative study on the main electrical parameters of Au n Si MS Au biphenyl CuPc n Si and Au biphenylSubs CoPc n Si MPS type Schottky barrier diodes SBDs
A DEMİR, İ YÜCEDAĞ, E GÜLÇİN, Ş ALTINDAL, N BARAZ, M KANDAZ
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