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Francesco Bertazzi
Francesco Bertazzi
Assistant Professor, Politecnico di Torino, Dipartimento di Elettronica e Telecomunicazioni
Verified email at polito.it
Title
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Cited by
Year
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 2013
4702013
Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
F Bertazzi, M Moresco, E Bellotti
Journal of Applied Physics 106 (6), 2009
1322009
Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes
M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ...
physica status solidi (a) 212 (5), 947-953, 2015
1192015
A numerical study of Auger recombination in bulk InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 97 (23), 2010
1062010
Electronic structure of wurtzite ZnO: Nonlocal pseudopotential and ab initio calculations
M Goano, F Bertazzi, M Penna, E Bellotti
Journal of Applied Physics 102 (8), 2007
1012007
Numerical analysis of indirect Auger transitions in InGaN
F Bertazzi, M Goano, E Bellotti
Applied Physics Letters 101 (1), 2012
882012
Alloy scattering in AlGaN and InGaN: A numerical study
E Bellotti, F Bertazzi, M Goano
Journal of Applied Physics 101 (12), 2007
832007
Role of defects in the thermal droop of InGaN-based light emitting diodes
C De Santi, M Meneghini, M La Grassa, B Galler, R Zeisel, M Goano, ...
Journal of Applied Physics 119 (9), 2016
772016
Simulation of quantum dot solar cells including carrier intersubband dynamics and transport
M Gioannini, AP Cedola, N Di Santo, F Bertazzi, F Cappelluti
IEEE Journal of Photovoltaics 3 (4), 1271-1278, 2013
692013
A general conformal-mapping approach to the optimum electrode design of coplanar waveguides with arbitrary cross section
M Goano, F Bertazzi, P Caravelli, G Ghione, TA Driscoll
IEEE Transactions on Microwave Theory and Techniques 49 (9), 1573-1580, 2001
642001
Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study
F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti
Applied Physics Letters 103 (8), 2013
632013
Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives
M Meneghini, C De Santi, A Tibaldi, M Vallone, F Bertazzi, G Meneghesso, ...
Journal of applied Physics 127 (21), 2020
622020
A numerical study of carrier impact ionization in AlxGa1− xN
E Bellotti, F Bertazzi
Journal of Applied Physics 111 (10), 2012
562012
Hydrodynamic transport parameters of wurtzite ZnO from analytic-and full-band Monte Carlo simulation
E Furno, F Bertazzi, M Goano, G Ghione, E Bellotti
Solid-state electronics 52 (11), 1796-1801, 2008
552008
Electron and hole transport in bulk ZnO: A full band Monte Carlo study
F Bertazzi, M Goano, E Bellotti
Journal of Electronic Materials 36, 857-863, 2007
542007
A fast reduced-order model for the full-wave FEM analysis of lossy inhomogeneous anisotropic waveguides
F Bertazzi, OA Peverini, M Goano, G Ghione, R Orta, R Tascone
IEEE transactions on microwave theory and techniques 50 (9), 2108-2114, 2002
502002
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
M Mandurrino, M Goano, M Vallone, F Bertazzi, G Ghione, G Verzellesi, ...
Journal of Computational Electronics 14, 444-455, 2015
482015
Full-band Monte Carlo simulation of HgCdTe APDs
F Bertazzi, M Moresco, M Penna, M Goano, E Bellotti
Journal of Electronic Materials 39, 912-917, 2010
472010
Numerical modeling of SRH and tunneling mechanisms in high-operating-temperature MWIR HgCdTe photodetectors
M Vallone, M Mandurrino, M Goano, F Bertazzi, G Ghione, W Schirmacher, ...
Journal of Electronic Materials 44, 3056-3063, 2015
432015
VENUS: A vertical-cavity surface-emitting laser electro-opto-thermal numerical simulator
A Tibaldi, F Bertazzi, M Goano, R Michalzik, P Debernardi
IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-12, 2019
422019
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Articles 1–20