A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009 | 333 | 2009 |
Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008 | 211 | 2008 |
Failure analysis-assisted FMEA G Cassanelli, G Mura, F Fantini, M Vanzi, B Plano Microelectronics Reliability 46 (9-11), 1795-1799, 2006 | 130 | 2006 |
High temperature electro-optical degradation of InGaN/GaN HBLEDs M Meneghini, L Trevisanello, C Sanna, G Mura, M Vanzi, G Meneghesso, ... Microelectronics Reliability 47 (9-11), 1625-1629, 2007 | 111 | 2007 |
Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms? J Suñé, G Mura, E Miranda IEEE Electron Device Letters 21 (4), 167-169, 2000 | 97 | 2000 |
Failure modes and mechanisms of DC‐aged GaN LEDs G Meneghesso, S Levada, E Zanoni, S Podda, G Mura, M Vanzi, ... physica status solidi (a) 194 (2), 389-392, 2002 | 84 | 2002 |
Phosphors for LED-based light sources: Thermal properties and reliability issues M Dal Lago, M Meneghini, N Trivellin, G Mura, M Vanzi, G Meneghesso, ... Microelectronics Reliability 52 (9-10), 2164-2167, 2012 | 80 | 2012 |
Reliability of visible GaN LEDs in plastic package G Meneghesso, S Levada, E Zanoni, G Scamarcio, G Mura, E Zanoni, ... Microelectronics Reliability 43, 1737-1742, 2003 | 74 | 2003 |
Chip and package-related degradation of high power white LEDs M Meneghini, M Dal Lago, N Trivellin, G Mura, M Vanzi, G Meneghesso, ... Microelectronics Reliability 52 (5), 804-812, 2012 | 62 | 2012 |
Thermal stability analysis of high brightness LED during high temperature and electrical aging LR Trevisanello, M Meneghini, G Mura, C Sanna, S Buso, G Spiazzi, ... Seventh International Conference on Solid State Lighting 6669, 231-240, 2007 | 62 | 2007 |
CdTe solar cells: technology, operation and reliability M Barbato, E Artegiani, M Bertoncello, M Meneghini, N Trivellin, ... Journal of Physics D: Applied Physics 54 (33), 333002, 2021 | 48 | 2021 |
Influence of shunt resistance on the performance of an illuminated string of solar cells: theory, simulation, and experimental analysis M Barbato, M Meneghini, A Cester, G Mura, E Zanoni, G Meneghesso IEEE Transactions on Device and Materials Reliability 14 (4), 942-950, 2014 | 40 | 2014 |
Reliability predictions in electronic industrial applications G Cassanelli, G Mura, F Cesaretti, M Vanzi, F Fantini Microelectronics Reliability 45 (9-11), 1321-1326, 2005 | 32 | 2005 |
Sulfur-contamination of high power white LED G Mura, G Cassanelli, F Fantini, M Vanzi Microelectronics Reliability 48 (8-9), 1208-1211, 2008 | 31 | 2008 |
Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence M Meneghini, S Carraro, G Meneghesso, N Trivellin, G Mura, F Rossi, ... Applied Physics Letters 103 (23), 2013 | 28 | 2013 |
Formation of metastable solid solutions by mechanical alloying of immiscible Ag and Bi E Musu, G Mura, G Ligios, F Delogu Journal of alloys and compounds 576, 80-85, 2013 | 21 | 2013 |
The interpretation of the DC characteristics of LED and laser diodes to address their failure analysis G Mura, M Vanzi Microelectronics Reliability 50 (4), 471-478, 2010 | 20 | 2010 |
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology L Sponton, L Cerati, G Croce, G Mura, S Podda, M Vanzi, G Meneghesso microelectronics reliability 42, 1303-1306, 2002 | 17 | 2002 |
High brightness InGaN LEDs degradation at high injection current bias S Levada, M Meneghini, E Zanoni, S Buso, G Spiazzi, G Meneghesso, ... 2006 IEEE International Reliability Physics Symposium Proceedings, 615-616, 2006 | 15 | 2006 |
Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes M Marioli, M Meneghini, F Rossi, G Salviati, C de Santi, G Mura, ... physica status solidi (a) 212 (5), 974-979, 2015 | 14 | 2015 |