Matthew T. Hardy

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	Toate	Din 2019
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David J. MeyerNaval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
D S KatzerUS Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraAdresă de e-mail confirmată pe engineering.ucsb.edu
Neeraj NepalUS Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Jim SpeckProfessor of Materials, UCSBAdresă de e-mail confirmată pe ucsb.edu
Brian P DowneyUS Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Eric N. JinResearch Physicist at U.S. Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Kate M Kelchner, PhDMeta Reality LabsAdresă de e-mail confirmată pe ece.ucsb.edu
Daniel FeezellUniversity of New MexicoAdresă de e-mail confirmată pe unm.edu
Vikrant GokhaleUS Naval Research Laboratory | NIST | University of MichiganAdresă de e-mail confirmată pe nrl.navy.mil
Virginia WheelerNRLAdresă de e-mail confirmată pe nrl.navy.mil
Chia-Yen HuangNational Yang Ming Chiao Tung University, Department of PhotonicsAdresă de e-mail confirmată pe nycu.edu.tw
Robert M. FarrellAssistant Professor, ECE Department, University of Wisconsin–MadisonAdresă de e-mail confirmată pe wisc.edu
Ingrid KoslowMaterials Department, University of California Santa BarbaraAdresă de e-mail confirmată pe umail.ucsb.edu
Erin C. YoungUniversity of California, Santa BarbaraAdresă de e-mail confirmată pe engineering.ucsb.edu
Dan HaegerAppleAdresă de e-mail confirmată pe apple.com
Aleksei RomanovITMO UniversityAdresă de e-mail confirmată pe niuitmo.ru
John A. RogersSimpson/Querrey Professor, Northwestern UniversityAdresă de e-mail confirmată pe northwestern.edu
Thomas Oscar McConkieThe Design Knowlege CompanyAdresă de e-mail confirmată pe tdkc.com
Andrew C. LangMaterials Research Engineer - US Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil

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Matthew T. Hardy

Electronics Science and Technology Division, Naval Research Laboratory

Adresă de e-mail confirmată pe nrl.navy.mil

millimeter wave devices epitaxial growth GaN scandium aluminum nitride


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
High-resolution electrohydrodynamic jet printing JU Park, M Hardy, SJ Kang, K Barton, K Adair, DK Mukhopadhyay, ... Nature materials 6 (10), 782-789, 2007	1709	2007
Superluminescent diodes by crystallographic etching MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ... US Patent App. 12/913,638, 2011	255	2011
Group III-nitride lasers: a materials perspective MT Hardy, DF Feezell, SP DenBaars, S Nakamura Materials Today 14 (9), 408-415, 2011	193	2011
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer Applied Physics Letters 110 (16), 2017	144	2017
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...	119	2010
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ... Applied physics express 2 (8), 082102, 2009	80	2009
444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ... Applied Physics Letters 100 (2), 2012	76	2012
Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ... Applied Physics Letters 101 (12), 2012	65	2012
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ... Applied Physics Letters 103 (8), 2013	62	2013
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ... Applied Physics Express 13 (6), 065509, 2020	61	2020
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ... Applied Physics Express 2 (7), 071003, 2009	59	2009
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ... IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016	56	2016
Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy PS Hsu, MT Hardy, EC Young, AE Romanov, SP DenBaars, S Nakamura, ... APPLIED PHYSICS LETTERS 100, 171917, 2012	55	2012
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ... Journal of Vacuum Science & Technology A 38 (6), 2020	52	2020
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ... Applied Physics Letters 103 (15), 2013	52	2013
Trace analysis of non-basal plane misfit stress relaxation in (20-21) and (30-3-1) semipolar InGaN/GaN heterostructures MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ... Applied Physics Letters 100 (20), 202103-202103-4, 2012	51	2012
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ... Applied Physics Express 8 (8), 085501, 2015	50	2015
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ... Applied Physics Letters 99 (24), 2011	50	2011
m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching MT Hardy, KM Kelchner, YD Lin, PS Hsu, K Fujito, H Ohta, JS Speck, ... Applied Physics Express 2 (12), 121004, 2009	49	2009
Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017	45	2017

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