| Deep level defects in electron-irradiated SiC epitaxial layers C Hemmingsson, NT Son, O Kordina, JP Bergman, E Janzén, ... Journal of Applied Physics 81 (9), 6155-6159, 1997 | 358 | 1997 |
| Negative-U centers in 4H silicon carbide CG Hemmingsson, NT Son, A Ellison, J Zhang, E Janzén Physical Review B 58 (16), R10119, 1998 | 180 | 1998 |
| Evidence for two Mg related acceptors in GaN BO Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Physical review letters 102 (23), 235501, 2009 | 148 | 2009 |
| Growth of thick GaN layers with hydride vapour phase epitaxy B Monemar, H Larsson, C Hemmingsson, IG Ivanov, D Gogova Journal of crystal growth 281 (1), 17-31, 2005 | 93 | 2005 |
| Capture cross sections of electron irradiation induced defects in 6H–SiC C Hemmingsson, NT Son, O Kordina, E Janzén, JL Lindström Journal of applied physics 84 (2), 704-708, 1998 | 78 | 1998 |
| HTCVD growth of semi-insulating 4H-SiC crystals with low defect density A Ellison, B Magnusson, C Hemmingsson, W Magnusson, T Iakimov, ... MRS Online Proceedings Library (OPL) 640, H1. 2, 2000 | 74 | 2000 |
| Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template D Gogova, A Kasic, H Larsson, C Hemmingsson, B Monemar, F Tuomisto, ... Journal of applied physics 96 (1), 799-806, 2004 | 66 | 2004 |
| Properties of the main Mg-related acceptors in GaN from optical and structural studies B Monemar, PP Paskov, G Pozina, C Hemmingsson, JP Bergman, ... Journal of Applied Physics 115 (5), 2014 | 58 | 2014 |
| Emission properties of Ga2O3 nano-flakes: effect of excitation density G Pozina, M Forsberg, MA Kaliteevski, C Hemmingsson Scientific Reports 7 (1), 42132, 2017 | 57 | 2017 |
| Identification of the gallium vacancy–oxygen pair defect in GaN NT Son, CG Hemmingsson, T Paskova, KR Evans, A Usui, N Morishita, ... Physical Review B 80 (15), 153202, 2009 | 54 | 2009 |
| Observation of negative-U centers in 6H silicon carbide CG Hemmingsson, NT Son, E Janzén Applied physics letters 74 (6), 839-841, 1999 | 54 | 1999 |
| Barrier height determination for n-type 4H-SiC schottky contacts made using various metals R Yakimova, C Hemmingsson, MF Macmillan, T Yakimov, E Janzén Journal of electronic materials 27, 871-875, 1998 | 52 | 1998 |
| Effect of silicon and oxygen doping on donor bound excitons in bulk GaN G Pozina, S Khromov, C Hemmingsson, L Hultman, B Monemar Physical Review B 84 (16), 165213, 2011 | 46 | 2011 |
| Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN C Hemmingsson, G Pozina Journal of crystal growth 366, 61-66, 2013 | 44 | 2013 |
| Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor C Hemmingsson, PP Paskov, G Pozina, M Heuken, B Schineller, ... Journal of crystal growth 300 (1), 32-36, 2007 | 44 | 2007 |
| Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy TT Duc, G Pozina, E Janzén, C Hemmingsson Journal of Applied Physics 114 (15), 2013 | 43 | 2013 |
| Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN S Khromov, CG Hemmingsson, H Amano, B Monemar, L Hultman, ... Physical Review B 84 (7), 075324, 2011 | 43 | 2011 |
| Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates G Pozina, PP Paskov, JP Bergman, C Hemmingsson, L Hultman, ... Applied Physics Letters 91 (22), 2007 | 41 | 2007 |
| Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC A Henry, O Kordina, C Hallin, C Hemmingsson, E Janzén Applied physics letters 65 (19), 2457-2459, 1994 | 41 | 1994 |
| Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor C Hemmingsson, PP Paskov, G Pozina, M Heuken, B Schineller, ... Superlattices and Microstructures 40 (4-6), 205-213, 2006 | 36 | 2006 |
