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Francesco Iannuzzo
Francesco Iannuzzo
Full professor, University of Aalborg, Denmark
Verified email at et.aau.dk
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Cited by
Year
Catastrophic failure and fault-tolerant design of IGBT power electronic converters-an overview
R Wu, F Blaabjerg, H Wang, M Liserre, F Iannuzzo
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society …, 2013
2722013
A 3-D-lumped thermal network model for long-term load profiles analysis in high-power IGBT modules
AS Bahman, K Ma, P Ghimire, F Iannuzzo, F Blaabjerg
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3 …, 2016
1732016
A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations
R Wu, H Wang, KB Pedersen, K Ma, P Ghimire, F Iannuzzo, F Blaabjerg
IEEE Transactions on Industry Applications 52 (4), 3306-3314, 2016
1502016
IGBT junction temperature measurement via peak gate current
N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2016
1472016
IGBT junction temperature measurement via peak gate current
N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2016
1472016
Reliability oriented design tool for the new generation of grid connected PV-inverters
NC Sintamarean, F Blaabjerg, H Wang, F Iannuzzo, P de Place Rimmen
IEEE Transactions on Power Electronics 30 (5), 2635-2644, 2014
1392014
High-voltage, high-performance switch using series-connected IGBTs
C Abbate, G Busatto, F Iannuzzo
IEEE Transactions on Power Electronics 25 (9), 2450-2459, 2010
1302010
A short-circuit safe operation area identification criterion for SiC MOSFET power modules
PD Reigosa, F Iannuzzo, H Luo, F Blaabjerg
IEEE Transactions on Industry Applications 53 (3), 2880-2887, 2016
1032016
IR camera validation of IGBT junction temperature measurement via peak gate current
N Baker, L Dupont, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 32 (4), 3099-3111, 2017
1022017
A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis
L Ceccarelli, PD Reigosa, F Iannuzzo, F Blaabjerg
Microelectronics Reliability 76, 272-276, 2017
932017
Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy
L Ceccarelli, RM Kotecha, AS Bahman, F Iannuzzo, HA Mantooth
IEEE Transactions on Power Electronics 34 (10), 9698-9708, 2019
772019
Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules
H Luo, F Iannuzzo, M Turnaturi
IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019
702019
Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation
UM Choi, F Blaabjerg, F Iannuzzo, S Jørgensen
Microelectronics Reliability 55 (9-10), 2022-2026, 2015
702015
Enabling junction temperature estimation via collector-side thermo-sensitive electrical parameters through emitter stray inductance in high-power IGBT modules
H Luo, W Li, F Iannuzzo, X He, F Blaabjerg
IEEE Transactions on Industrial Electronics 65 (6), 4724-4738, 2017
652017
Physical CAD model for high-voltage IGBTs based on lumped-charge approach
F Iannuzzo, G Busatto
IEEE Transactions on Power Electronics 19 (4), 885-893, 2004
652004
Design of low-inductance switching power cell for GaN HEMT based inverter
E Gurpinar, F Iannuzzo, Y Yang, A Castellazzi, F Blaabjerg
IEEE Transactions on Industry Applications 54 (2), 1592-1601, 2017
642017
Investigation and classification of short-circuit failure modes based on three-dimensional safe operating area for high-power IGBT modules
Y Chen, W Li, F Iannuzzo, H Luo, X He, F Blaabjerg
IEEE Transactions on Power Electronics 33 (2), 1075-1086, 2017
642017
Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions
H Luo, F Iannuzzo, F Blaabjerg, M Turnaturi, E Mattiuzzo
2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2506-2511, 2017
602017
Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches
K Hu, Z Liu, Y Yang, F Iannuzzo, F Blaabjerg
IEEE Access 8, 89988-90022, 2020
592020
Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations
UM Choi, F Blaabjerg, S Jørgensen, F Iannuzzo, H Wang, C Uhrenfeldt, ...
Microelectronics Reliability 64, 403-408, 2016
562016
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