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APL Materials 7 (2), 2019
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New Journal of Physics 11 (6), 063031, 2009
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Applied Physics Letters 91 (26), 2007
58 2007 Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 95 (22), 2009
57 2009 On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: application to Fe-doped GaN DC Look, JH Leach
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56 2016 Ga2 O3 -on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ...
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Journal of Applied Physics 106 (7), 2009
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