| Two series oxide resistors applicable to high speed and high density nonvolatile memory MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ... Advanced Materials 19 (22), 3919-3923, 2007 | 492 | 2007 |
| In-situ analysis method for atomic layer deposition process JC Lee, C Lim, R Jung US Patent App. 10/874,565, 2004 | 471 | 2004 |
| Observation of electric-field induced Ni filament channels in polycrystalline NiOx film GS Park, XS Li, DC Kim, RJ Jung, MJ Lee, S Seo Applied Physics Letters 91 (22), 2007 | 295 | 2007 |
| Chemical structure of the interface in ultrathin films JC Lee, SJ Oh, M Cho, CS Hwang, R Jung Applied physics letters 84 (8), 1305-1307, 2004 | 145 | 2004 |
| Source/drain series-resistance effects in amorphous gallium–indium zinc-oxide thin film transistors J Park, C Kim, S Kim, I Song, S Kim, D Kang, H Lim, H Yin, R Jung, E Lee, ... IEEE Electron Device Letters 29 (8), 879-881, 2008 | 124 | 2008 |
| Nanoscale Spin-State Ordering in LaCoO3 Epitaxial Thin Films JH Kwon, WS Choi, YK Kwon, R Jung, JM Zuo, HN Lee, M Kim Chemistry of Materials 26 (8), 2496-2501, 2014 | 95 | 2014 |
| Resistive memory switching in epitaxially grown NiO SR Lee, K Char, DC Kim, R Jung, S Seo, XS Li, GS Park, IK Yoo Applied Physics Letters 91 (20), 2007 | 80 | 2007 |
| Structure, magnetic and transport properties of La1− xBixMnO3 YD Zhao, J Park, RJ Jung, HJ Noh, SJ Oh Journal of magnetism and magnetic materials 280 (2-3), 404-411, 2004 | 77 | 2004 |
| Role of oxygen vacancy in HfO2∕ SiO2∕ Si (100) interfaces DY Cho, SJ Oh, YJ Chang, TW Noh, R Jung, JC Lee Applied Physics Letters 88 (19), 2006 | 76 | 2006 |
| Decrease in switching voltage fluctuation of Pt∕ NiOX∕ Pt structure by process control R Jung, MJ Lee, S Seo, DC Kim, GS Park, K Kim, S Ahn, Y Park, IK Yoo, ... Applied physics letters 91 (2), 2007 | 74 | 2007 |
| Current-induced metal–insulator transition in VOx thin film prepared by rapid-thermal-annealing CR Cho, SI Cho, S Vadim, R Jung, I Yoo Thin Solid Films 495 (1-2), 375-379, 2006 | 72 | 2006 |
| Resistance switching characteristics in Li-doped NiO K Jung, J Choi, Y Kim, H Im, S Seo, R Jung, DC Kim, JS Kim, BH Park, ... Journal of Applied Physics 103 (3), 2008 | 64 | 2008 |
| Control of silicidation in HfO2∕ Si (100) interfaces DY Cho, KS Park, BH Choi, SJ Oh, YJ Chang, DH Kim, TW Noh, R Jung, ... Applied Physics Letters 86 (4), 2005 | 56 | 2005 |
| Identification of the controlling parameter for the set-state resistance of a TiO2 resistive switching cell SJ Song, KM Kim, GH Kim, MH Lee, JY Seok, R Jung, CS Hwang Applied Physics Letters 96 (11), 2010 | 52 | 2010 |
| Electronic structure of disordered Au-Pd alloys studied by electron spectroscopies TU Nahm, R Jung, JY Kim, WG Park, SJ Oh, JH Park, JW Allen, ... Physical Review B 58 (15), 9817, 1998 | 52 | 1998 |
| Ferroelectric and magnetic properties of Fe-doped BaTiO3 thin films grown by the pulsed laser deposition E Venkata Ramana, SM Yang, R Jung, MH Jung, BW Lee, CU Jung Journal of Applied Physics 113 (18), 2013 | 50 | 2013 |
| Field effect transistor, logic circuit including the same and methods of manufacturing the same H Chung, R Jung, SA Seo, D Kim, C Lee US Patent 8,274,098, 2012 | 43 | 2012 |
| Localized Character of Electrons in and RJ Jung, BH Choi, SJ Oh, HD Kim, EJ Cho, T Iwasaki, A Sekiyama, ... Physical review letters 91 (15), 157601, 2003 | 33 | 2003 |
| Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures SH Phark, R Jung, YJ Chang, TW Noh, DW Kim Applied Physics Letters 94 (2), 2009 | 31 | 2009 |
| Determination of effective electron inelastic mean free paths in SiO2 and Si3N4 using a Si reference R Jung, JC Lee, GT Orosz, A Sulyok, G Zsolt, M Menyhard Surface science 543 (1-3), 153-161, 2003 | 31 | 2003 |
