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Massimo V Fischetti
Massimo V Fischetti
Adresă de e-mail confirmată pe utdallas.edu
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Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
MV Fischetti, SE Laux
Journal of Applied Physics 80 (4), 2234-2252, 1996
19081996
Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
MV Fischetti, SE Laux
Physical Review B 38 (14), 9721, 1988
13071988
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
MV Fischetti, DA Neumayer, EA Cartier
Journal of Applied Physics 90 (9), 4587-4608, 2001
10112001
Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
MV Fischetti
IEEE transactions on electron devices 38 (3), 634-649, 1991
8231991
Silicon CMOS devices beyond scaling
W Haensch, EJ Nowak, RH Dennard, PM Solomon, A Bryant, ...
IBM Journal of Research and Development 50 (4.5), 339-361, 2006
6262006
Six-band calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim
Journal of Applied Physics 94 (2), 1079-1095, 2003
6262003
Monte Carlo study of electron transport in silicon inversion layers
MV Fischetti, SE Laux
Physical Review B 48 (4), 2244, 1993
6211993
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
Laux, Fischetti
1992 International Technical Digest on Electron Devices Meeting, 553-556, 1992
4281992
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
S Zafar, A Callegari, E Gusev, MV Fischetti
Journal of Applied physics 93 (11), 9298-9303, 2003
3872003
Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
S Jin, MV Fischetti, T Tang
Journal of Applied Physics 102 (8), 2007
3702007
Quantum effects in the early universe. I. Influence of trace anomalies on homogeneous, isotropic, classical geometries
MV Fischetti, JB Hartle, BL Hu
Physical Review D 20 (8), 1757, 1979
3621979
Theory of high-field electron transport in silicon dioxide
MV Fischetti, DJ DiMaria, SD Brorson, TN Theis, JR Kirtley
Physical Review B 31 (12), 8124, 1985
3511985
Monte Carlo device simulation: full band and beyond
K Hess
Springer Science & Business Media, 2012
3432012
Understanding hot‐electron transport in silicon devices: Is there a shortcut?
MV Fischetti, SE Laux, E Crabbe
Journal of Applied Physics 78 (2), 1058-1087, 1995
2921995
On the enhanced electron mobility in strained-silicon inversion layers
MV Fischetti, F Gamiz, W Hänsch
Journal of applied physics 92 (12), 7320-7324, 2002
2842002
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
F Gamiz, MV Fischetti
Journal of Applied Physics 89 (10), 5478-5487, 2001
2572001
Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection
MV Fischetti
Journal of applied physics 57 (8), 2860-2879, 1985
2301985
Hybrid-orientation technology (HOT): Opportunities and challenges
M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ...
IEEE Transactions on Electron Devices 53 (5), 965-978, 2006
2232006
Impact ionization in silicon
E Cartier, MV Fischetti, EA Eklund, FR McFeely
Applied Physics Letters 62 (25), 3339-3341, 1993
2031993
Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs
S Jin, MV Fischetti, TW Tang
IEEE Transactions on Electron Devices 54 (9), 2191-2203, 2007
1992007
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