Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys MV Fischetti, SE Laux
Journal of Applied Physics 80 (4), 2234-2252, 1996
1908 1996 Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects MV Fischetti, SE Laux
Physical Review B 38 (14), 9721, 1988
1307 1988 Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering MV Fischetti, DA Neumayer, EA Cartier
Journal of Applied Physics 90 (9), 4587-4608, 2001
1011 2001 Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport MV Fischetti
IEEE transactions on electron devices 38 (3), 634-649, 1991
823 1991 Silicon CMOS devices beyond scaling W Haensch, EJ Nowak, RH Dennard, PM Solomon, A Bryant, ...
IBM Journal of Research and Development 50 (4.5), 339-361, 2006
626 2006 Six-band calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim
Journal of Applied Physics 94 (2), 1079-1095, 2003
626 2003 Monte Carlo study of electron transport in silicon inversion layers MV Fischetti, SE Laux
Physical Review B 48 (4), 2244, 1993
621 1993 Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go? Laux, Fischetti
1992 International Technical Digest on Electron Devices Meeting, 553-556, 1992
428 1992 Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti
Journal of Applied physics 93 (11), 9298-9303, 2003
387 2003 Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity S Jin, MV Fischetti, T Tang
Journal of Applied Physics 102 (8), 2007
370 2007 Quantum effects in the early universe. I. Influence of trace anomalies on homogeneous, isotropic, classical geometries MV Fischetti, JB Hartle, BL Hu
Physical Review D 20 (8), 1757, 1979
362 1979 Theory of high-field electron transport in silicon dioxide MV Fischetti, DJ DiMaria, SD Brorson, TN Theis, JR Kirtley
Physical Review B 31 (12), 8124, 1985
351 1985 Monte Carlo device simulation: full band and beyond K Hess
Springer Science & Business Media, 2012
343 2012 Understanding hot‐electron transport in silicon devices: Is there a shortcut? MV Fischetti, SE Laux, E Crabbe
Journal of Applied Physics 78 (2), 1058-1087, 1995
292 1995 On the enhanced electron mobility in strained-silicon inversion layers MV Fischetti, F Gamiz, W Hänsch
Journal of applied physics 92 (12), 7320-7324, 2002
284 2002 Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion F Gamiz, MV Fischetti
Journal of Applied Physics 89 (10), 5478-5487, 2001
257 2001 Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection MV Fischetti
Journal of applied physics 57 (8), 2860-2879, 1985
230 1985 Hybrid-orientation technology (HOT): Opportunities and challenges M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ...
IEEE Transactions on Electron Devices 53 (5), 965-978, 2006
223 2006 Impact ionization in silicon E Cartier, MV Fischetti, EA Eklund, FR McFeely
Applied Physics Letters 62 (25), 3339-3341, 1993
203 1993 Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs S Jin, MV Fischetti, TW Tang
IEEE Transactions on Electron Devices 54 (9), 2191-2203, 2007
199 2007