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Dr. Nitin Sachdeva
Dr. Nitin Sachdeva
Assistant Professor, J.C.Bose University of Science & Technology, YMCA Faridabad
Verified email at jcboseust.ac.in
Title
Cited by
Cited by
Year
Analysis and design of a two stage cmos op-amp with 180nm using miller compensation technique
S Goyal, N Sachdeva, T Sachdeva
Int. Journal on Recent and Innovation Trends in Computing and Communication …, 2015
152015
An FPGA based real-time histogram equalization circuit for image enhancement
N Sachdeva, T Sachdeva
International Journal of Electronics Communication Technology (IJECT) 1 (1), 2010
102010
Effect of gate work-function on gate induced drain leakage of MOSFETs
N Sachdeva, M Vashishath, PK Bansal
IJCEM 21 (1), 11-16, 2018
72018
"Design and Analysis of carry look ahead adder using CMOS technique"
NS Amita
IOSR Journal of Electronics and Communication Engineering (IOSR-JECE) 9 (2 …, 2014
6*2014
Effect of temperature fluctuations on MOSFET characteristics
N Sachdeva, N Julka
International Journal of Electronics & Communication Technology, I S SN …, 2011
62011
Performance investigation of dual-halo dual-dielectric triple material surrounding gate MOSFET with high-K dielectrics for low power applications
N Gupta, P Kumar, N Sachdeva, T Sachdeva, M Vashistha
Journal of Semiconductor Technology and Science 20 (3), 1-8, 2020
52020
Analytical Modeling & Simulation of OFF-State Leakage Current for Lightly Doped MOSFETs
N Sachdeva, M Vashishath, PK Bansal
Journal of Nano-and Electronic Physics 9 (6), 2017
52017
Performance Investigation of Dual-Halo Dual-Dielectric Triple Material Surrounding Gate MOSFET with High-κ dielectrics for Low Power Applications
P Kumar, N Gupta, N Sachdeva, T Sachdeva, M Vashishath
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 20 (3), 297-304, 2020
42020
Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS Device
N Sachdeva, M Vashishath, PK Bansal
Journal of VLSI Design Tools & Technology 7 (3), 13-20, 2017
22017
Analysis of Sub-threshold Leakage Reduction Techniques for High-Speed Low Power VLSI Circuits
N Sachdeva, N Gupta, TK Sachdeva
2023 14th International Conference on Computing Communication and Networking …, 2023
2023
Application of Silicide Layer and Work Function in Optimization of MOSFET Process Parameters
RB Nitin Sachdeva, Neetu Gupta, Prashant Kumar
European Chemical Bulletin (Special Issue 4) 12 (4), 10799 – 10808, 2023
2023
Branching Particle Filter for Crowd Anomaly Detection
N Gupta, N Sachdeva, G Sardana, R Bansal
2023
International Research Journal of Engineering and Technology
YSN Sachdeva
International Research Journal of Engineering and Technology (IRJET) 9 (7 …, 2022
2022
Modeling, estimation and reduction of total leakage in scaled CMOS logic circuits
N Sachdeva
JC Bose University, 2021
2021
Effect of variation of Gate work-function on Electrical characteristics of Lightly doped MOSFET
NJ Nitin Sachdeva, Tarun Kumar Sachdeva
International Journal of Future Generation Communication and Networking 12 …, 2019
2019
Analytical 2D Modeling of Surface Potential and Threshold voltage for Lightly doped substrate NMOS
TKS Nitin Sachdeva
International Journal of Recent Technology and Engineering (IJRTE) 8 (4 …, 2019
2019
Impact of various Doping Distributions on N-MOSFET Performance
DPKB Nitin Sachdeva, Dr. Munish Vashishath
International Journal of Technology 8 (1), 23-32, 2018
2018
The Impact of Substrate Doping Concentration on Electrical Characteristics of 45nm Nmos Device
N Sachdeva, M Vashishath, PK Bansal
i-Manager's Journal on Electronics Engineering 8 (2), 20, 2017
2017
Effect of Halo Implant and Threshold Implant on Sub-Threshold Current and Substrate Current of MOSFET
N Sachdeva, M Vashishath, PK Bansal
i-Manager's Journal on Embedded Systems 6 (1), 23, 2017
2017
Reduction of Short Channel Effects with the Variation of Poly Doping and Source/Drain Doping
PKB Nitin Sachdeva,, Munish Vashishath
Journal of Semi-conductor Devices and Circuits 4 (3), 35-42, 2017
2017
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