| Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy DB Jackrel, SR Bank, HB Yuen, MA Wistey, JS Harris, AJ Ptak, ... Journal of Applied Physics 101 (11), 2007 | 252 | 2007 |
| Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ... 2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012 | 181 | 2012 |
| MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 J Guo, G Li, F Faria, Y Cao, R Wang, J Verma, X Gao, S Guo, E Beam, ... IEEE Electron device letters 33 (4), 525-527, 2012 | 179 | 2012 |
| AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78at 0.5 V R Li, Y Lu, G Zhou, Q Liu, SD Chae, T Vasen, WS Hwang, Q Zhang, P Fay, ... IEEE electron device letters 33 (3), 363-365, 2012 | 164 | 2012 |
| Performance of AlGaSb/InAs TFETs with gate electric field and tunneling direction aligned Y Lu, G Zhou, R Li, Q Liu, Q Zhang, T Vasen, SD Chae, T Kosel, M Wistey, ... IEEE Electron Device Letters 33 (5), 655-657, 2012 | 138 | 2012 |
| Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth U Singisetti, MA Wistey, GJ Burek, AK Baraskar, BJ Thibeault, ... IEEE Electron Device Letters 30 (11), 1128-1130, 2009 | 116 | 2009 |
| Low-threshold continuous-wave 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs SR Bank, MA Wistey, LL Goddard, HB Yuen, V Lordi, JS Harris IEEE journal of quantum electronics 40 (6), 656-664, 2004 | 114 | 2004 |
| Recent Progress on 1.55- Dilute-Nitride Lasers SR Bank, H Bae, LL Goddard, HB Yuen, MA Wistey, R Kudrawiec, ... IEEE Journal of Quantum Electronics 43 (9), 773-785, 2007 | 109 | 2007 |
| The role of Sb in the MBE growth of (GaIn)(NAsSb) K Volz, V Gambin, W Ha, MA Wistey, H Yuen, S Bank, JS Harris Journal of Crystal Growth 251 (1-4), 360-366, 2003 | 107 | 2003 |
| InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and Ratio Near G Zhou, Y Lu, R Li, Q Zhang, Q Liu, T Vasen, H Zhu, JM Kuo, T Kosel, ... IEEE Electron Device Letters 33 (6), 782-784, 2012 | 105 | 2012 |
| GaInNAsSb for 1.3-1.6-/spl mu/m-long wavelength lasers grown by molecular beam epitaxy V Gambin, W Ha, M Wistey, H Yuen, SR Bank, SM Kim, JS Harris IEEE Journal of selected topics in quantum electronics 8 (4), 795-800, 2002 | 101 | 2002 |
| Ultralow resistance in situ Ohmic contacts to InGaAs/InP U Singisetti, MA Wistey, JD Zimmerman, BJ Thibeault, MJW Rodwell, ... Applied Physics Letters 93 (18), 2008 | 96 | 2008 |
| Long-wavelength GaInNAs (Sb) lasers on GaAs W Ha, V Gambin, S Bank, M Wistey, H Yuen, S Kim, JS Harris IEEE journal of quantum electronics 38 (9), 1260-1267, 2002 | 94 | 2002 |
| Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm W Ha, V Gambin, M Wistey, S Bank, S Kim, JS Harris IEEE Photonics Technology Letters 14 (5), 591-593, 2002 | 90 | 2002 |
| Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications JS Harris Jr, R Kudrawiec, HB Yuen, SR Bank, HP Bae, MA Wistey, ... physica status solidi (b) 244 (8), 2707-2729, 2007 | 83 | 2007 |
| Low-threshold CW GaInNAsSb/GaAs laser at 1.49 mm SR Bank, MA Wistey, HB Yuen, LL Goddard, W Ha, JS Harris Jr Electron. Lett 39 (20), 1445-1446, 2003 | 81 | 2003 |
| Room-temperature continuous-wave 1.55 µm GaInNAsSb laser on GaAs SR Bank, HP Bae, HB Yuen, MA Wistey, LL Goddard, JS Harris Jr Electronics Letters 42 (3), 1, 2006 | 78 | 2006 |
| Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs AK Baraskar, MA Wistey, V Jain, U Singisetti, G Burek, BJ Thibeault, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 74 | 2009 |
| Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate G Zhou, Y Lu, R Li, Q Zhang, WS Hwang, Q Liu, T Vasen, C Chen, H Zhu, ... IEEE Electron Device Letters 32 (11), 1516-1518, 2011 | 72 | 2011 |
| Chemical routes to Ge∕ Si (100) structures for low temperature Si-based semiconductor applications MA Wistey, YY Fang, J Tolle, AVG Chizmeshya, J Kouvetakis Applied Physics Letters 90 (8), 2007 | 65 | 2007 |
