henri boudinov
henri boudinov
Instituto de Física, UFRGS
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Cited by
Cited by
Insulating characteristics of polyvinyl alcohol for integrated electronics
EA Van Etten, ES Ximenes, LT Tarasconi, ITS Garcia, MMC Forte, ...
Thin Solid Films 568, 111-116, 2014
A novel voltage-mode CMOS quaternary logic design
RCG da Silva, H Boudinov, L Carro
IEEE Transactions on Electron devices 53 (6), 1480-1483, 2006
Quaternary look-up tables using voltage-mode CMOS logic design
R Cunha, H Boudinov, L Carro
37th International Symposium on Multiple-Valued Logic (ISMVL'07), 56-56, 2007
Instability of p–i–n perovskite solar cells under reverse bias
RAZ Razera, DA Jacobs, F Fu, P Fiala, M Dussouillez, F Sahli, TCJ Yang, ...
Journal of Materials Chemistry A 8 (1), 242-250, 2020
Electrical isolation in GaAs by light ion irradiation: The role of antisite defects
JP De Souza, I Danilov, H Boudinov
Applied physics letters 68 (4), 535-537, 1996
Thermal stability of the electrical isolation in n-type gallium arsenide layers irradiated with H, He, and B ions
JP De Souza, I Danilov, H Boudinov
Journal of applied physics 81 (2), 650-655, 1997
Chr. Klatt, S. Kalbitzer
JHR Dos Santos, PL Grande, H Boudinov, M Behar, R Stoll
Nucl. Instr. and Meth. B 106 (5), 1995
Electrical isolation of GaN by MeV ion irradiation
H Boudinov, SO Kucheyev, JS Williams, C Jagadish, G Li
Applied Physics Letters 78 (7), 943-945, 2001
Effect of irradiation temperature and ion flux on electrical isolation of
SO Kucheyev, H Boudinov, JS Williams, C Jagadish, G Li
Journal of applied physics 91 (7), 4117-4120, 2002
Electrical isolation of -type and -type InP layers by proton bombardment
H Boudinov, HH Tan, C Jagadish
Journal of Applied Physics 89 (10), 5343-5347, 2001
Angular dependence of the electronic energy loss of 800-keV He ionsalong the Si< 100> direction
JHR Dos Santos, PL Grande, M Behar, H Boudinov, G Schiwietz
Physical Review B 55 (7), 4332, 1997
Improvement of interface properties by oxidation using hydrogen peroxide
R Palmieri, C Radtke, H Boudinov, EF da Silva Jr
Applied Physics Letters 95 (11), 113504, 2009
AC-biased organic light-emitting field-effect transistors from naphthyl end-capped oligothiophenes
X Liu, I Wallmann, H Boudinov, J Kjelstrup-Hansen, M Schiek, A Lützen, ...
Organic Electronics 11 (6), 1096-1102, 2010
Nanowire growth on Si wafers by oxygen implantation and annealing
EA de Vasconcelos, FRP dos Santos, EF da Silva Jr, H Boudinov
Applied Surface Science 252 (15), 5572-5574, 2006
Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate
H Boudinov, JP De Souza, CK Saul
Journal of applied physics 86 (10), 5909-5911, 1999
Ion beam mixing of Fe thin film and Si substrate
DL Santos, JP De Souza, L Amaral, H Boudinov
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995
Distinguishing bulk traps and interface states in deep-level transient spectroscopy
AVP Coelho, MC Adam, H Boudinov
Journal of Physics D: Applied Physics 44 (30), 305303, 2011
Electrical activation of boron coimplanted with carbon in a silicon substrate
JP De Souza, H Boudinov
Journal of applied physics 74 (11), 6599-6602, 1993
Photoluminescence from Si nanocrystals induced by high-temperature implantation in
US Sias, EC Moreira, E Ribeiro, H Boudinov, L Amaral, M Behar
Journal of applied physics 95 (9), 5053-5059, 2004
Transport properties of silicon implanted with bismuth
E Abramof, AF da Silva, BE Sernelius, JP De Souza, H Boudinov
Physical Review B 55 (15), 9584, 1997
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