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Aleksandar Jaksic
Aleksandar Jaksic
Consultant, Sievert Consultancy
Adresă de e-mail confirmată pe sievert-consultancy.com
Titlu
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Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs
A Jaksic, G Ristic, M Pejovic, A Mohammadzadeh, C Sudre, W Lane
IEEE Transactions on Nuclear Science 49 (3), 1356-1363, 2002
982002
Radiochemistry on chip: towards dose-on-demand synthesis of PET radiopharmaceuticals
V Arima, G Pascali, O Lade, HR Kretschmer, I Bernsdorf, V Hammond, ...
Lab on a Chip 13 (12), 2328-2336, 2013
762013
Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs
A Haran, A Jaksic, N Refaeli, A Eliyahu, D David, J Barak
IEEE Transactions on Nuclear Science 51 (5), 2917-2921, 2004
582004
The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy (Si)
GS Ristić, ND Vasović, M Kovačević, AB Jakąić
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2011
552011
The technology demonstration module on-board PROBA-II
R Harboe-Sorensen, C Poivey, N Fleurinck, K Puimege, A Zadeh, ...
IEEE Transactions on Nuclear Science 58 (3), 1001-1007, 2010
542010
Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature
MM Pejovic, MM Pejovic, AB Jaksic
Sensors and Actuators A: Physical 174, 85-90, 2012
532012
Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing
GS Ristić, MM Pejović, AB Jakąić
Journal of applied physics 83 (6), 2994-3000, 1998
431998
Using RADFET for the real-time measurement of gamma radiation dose rate
MS Andjelković, GS Ristić, AB Jakąić
Measurement Science and Technology 26 (2), 025004, 2015
412015
pMOS dosimetric transistors with two-layer gate oxide
G Ristić, A Jakąić, M Pejović
Sensors and Actuators A: Physical 63 (2), 129-134, 1997
401997
Latent interface-trap generation in commercial power VDMOSFETs
A Jaksic, M Pejovic, G Ristic, S Rakovic
IEEE Transactions on Nuclear Science 45 (3), 1365-1371, 1998
351998
Characterisation of radiation response of 400 nm implanted gate oxide RADFETs
A Jaksic, G Ristic, M Pejovic, A Mohammadzadeh, W Lane
2002 23rd International Conference on Microelectronics. Proceedings (Cat. No …, 2002
342002
Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress
GS Ristić, MM Pejović, AB Jakąić
Journal of non-crystalline solids 353 (2), 170-179, 2007
322007
Analysis of postirradiation annealing of n-channel power vertical double-diffused metal–oxide–semiconductor transistors
GS Ristić, MM Pejović, AB Jakąić
Journal of Applied Physics 87 (7), 3468-3477, 2000
322000
Investigation of RadFET response to X-ray and electron beams
E Yilmaz, A Kahraman, AM McGarrigle, N Vasovic, D Yegen, A Jaksic
Applied Radiation and Isotopes 127, 156-160, 2017
302017
Heavy-ion induced charge yield in MOSFETs
A Javanainen, JR Schwank, MR Shaneyfelt, R Harboe-Sorensen, ...
IEEE Transactions on Nuclear Science 56 (6), 3367-3371, 2009
302009
Successive gamma-ray irradiation and corresponding post-irradiation annealing of pMOS dosimeters
MM Pejović, MM Pejović, AB Jakąić, KĐ Stanković, SA Marković
Nuclear Technology and Radiation Protection 27 (4), 341-345, 2012
272012
Radiation-induced statistical uncertainty in the threshold voltage measurement of MOSFET dosimeters
C Benson, RA Price, J Silvie, A Jaksic, MJ Joyce
Physics in Medicine & Biology 49 (14), 3145, 2004
272004
Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs
GS Ristić, MM Pejović, AB Jakąić
Applied surface science 220 (1-4), 181-185, 2003
272003
Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing
M Pejović, G Ristić, A Jakąić
Applied surface science 108 (1), 141-148, 1997
271997
Radiation-sensitive field effect transistor response to gamma-ray irradiation
MM Pejović, MM Pejović, AB Jakąić
Nuclear Technology and Radiation Protection 26 (1), 25-31, 2011
262011
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