Tyler Growden

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Paul R. BergerProfessor of Electrical and Computer Engineering, Ohio State UniversityAdresă de e-mail confirmată pe ieee.org
Elliott BrownProfessor of Physics, Ohio Research Scholars Chair in Sensor PhysicsAdresă de e-mail confirmată pe wright.edu
David J. MeyerNaval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Parastou FakhimiPhD Candidate, Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Brian P DowneyUS Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Evan CornuelleThe Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
D S KatzerUS Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Neeraj NepalUS Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Matthew T. HardyElectronics Science and Technology Division, Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Vikrant GokhaleUS Naval Research Laboratory | NIST | University of MichiganAdresă de e-mail confirmată pe nrl.navy.mil
Ravi DroopadTexas State UniversityAdresă de e-mail confirmată pe txstate.edu
Jeffrey DaultonMIT Lincoln LaboratoryAdresă de e-mail confirmată pe ll.mit.edu
Logan M. WhitakerGraduate Research Assistant, University of California, Santa BarbaraAdresă de e-mail confirmată pe ucsb.edu
Eric N. JinResearch Physicist at U.S. Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Jason RoussosNaval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Andrew C. LangMaterials Research Engineer - US Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Prudhvi Ram PeriArizona State UniversityAdresă de e-mail confirmată pe asu.edu
Anisha RameshThe Ohio State UniversityAdresă de e-mail confirmată pe intel.com
Enam ChowdhuryThe Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Kramer AkliOSUAdresă de e-mail confirmată pe osu.edu

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Tyler Growden

Research scientist, US Naval Research Laboratory

Adresă de e-mail confirmată pe nrl.navy.mil

Semiconductors GaN resonant tunneling diodes light emitting diodes quantum mechanics


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ... Applied Physics Letters 109 (8), 2016	68	2016
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger Light: Science & Applications 7 (2), 17150-17150, 2018	63	2018
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ... Applied physics letters 112 (3), 2018	56	2018
Selective deuteron production using target normal sheath acceleration JT Morrison, M Storm, E Chowdhury, KU Akli, S Feldman, C Willis, ... Physics of Plasmas 19 (3), 2012	34	2012
Molecular beam epitaxy of transition metal nitrides for superconducting device applications DS Katzer, N Nepal, MT Hardy, BP Downey, DF Storm, EN Jin, R Yan, ... physica status solidi (a) 217 (3), 1900675, 2020	27	2020
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ... Applied Physics Letters 116 (11), 2020	26	2020
930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template TA Growden, EM Cornuelle, DF Storm, W Zhang, ER Brown, LM Whitaker, ... Applied Physics Letters 114 (20), 2019	22	2019
Investigation of switching time in GaN/AlN resonant tunneling diodes by experiments and P-SPICE models WD Zhang, TA Growden, DF Storm, DJ Meyer, PR Berger, ER Brown IEEE Transactions on Electron Devices 67 (1), 75-79, 2019	20	2019
A nonlinear circuit simulation of switching process in resonant-tunneling diodes WD Zhang, ER Brown, TA Growden, PR Berger, R Droopad IEEE Transactions on Electron Devices 63 (12), 4993-4997, 2016	15	2016
Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition A Ramesh, TA Growden, PR Berger, R Loo, W Vandervorst, B Douhard, ... IEEE Transactions on electron Devices 59 (3), 602-609, 2012	15	2012
AlN/GaN/AlN resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy on freestanding GaN DF Storm, TA Growden, W Zhang, ER Brown, N Nepal, DS Katzer, ... Journal of Vacuum Science & Technology B 35 (2), 2017	14	2017
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 EM Cornuelle, TA Growden, DF Storm, ER Brown, W Zhang, BP Downey, ... AIP Advances 10 (5), 2020	12	2020
Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time TA Growden, ER Brown, W Zhang, R Droopad, PR Berger Applied Physics Letters 107 (15), 2015	12	2015
Electroluminescence in Unipolar-Doped Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization ER Brown, WD Zhang, TA Growden, P Fakhimi, PR Berger Physical Review Applied 16 (5), 054008, 2021	8	2021
Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire DF Storm, TA Growden, EM Cornuelle, PR Peri, T Osadchy, JW Daulton, ... Journal of Vacuum Science & Technology B 38 (3), 2020	8	2020
Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures EN Jin, BP Downey, VJ Gokhale, JA Roussos, MT Hardy, TA Growden, ... APL Materials 9 (11), 2021	6	2021
Fabrication and characterization of GaN/AlN resonant tunneling diodes WD Zhang, TA Growden, ER Brown, PR Berger, DF Storm, DJ Meyer High-Frequency GaN Electronic Devices, 249-281, 2020	6	2020
Micro-transfer printing of GaN HEMTs for heterogeneous integration and flexible RF circuit design BP Downey, A Xie, S Mack, DS Katzer, JG Champlain, Y Cao, N Nepal, ... 2020 Device Research Conference (DRC), 1-2, 2020	5	2020
Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures ER Brown, W Zhang, T Growden, PR Berger, D Storm, D Meyer US Patent 10,461,216, 2019	5	2019
Methods for attaining high interband tunneling current in III-Nitrides TA Growden, S Krishnamoorthy, DN Nath, A Ramesh, S Rajan, PR Berger 70th Device Research Conference, 163-164, 2012	4	2012

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