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Aristos Christou
Aristos Christou
University of Marylnd
Verified email at umd.edu
Title
Cited by
Cited by
Year
Failure mechanism models for electromigration
D Young, A Christou
IEEE Transactions on Reliability 43 (2), 186-192, 1994
1521994
Solid phase formation in Au: Ge/Ni, Ag/In/Ge, In/Au: Ge GaAs ohmic contact systems
A Christou
Solid-State Electronics 22 (2), 141-149, 1979
1111979
Achievements and limitations in optimized GaAs films grown on Si by molecular‐beam epitaxy
A Georgakilas, P Panayotatos, J Stoemenos, JL Mourrain, A Christou
Journal of applied physics 71 (6), 2679-2701, 1992
1031992
Pt and PtSix Schottky contacts on n‐type β‐SiC
NA Papanicolaou, A Christou, ML Gipe
Journal of applied physics 65 (9), 3526-3530, 1989
971989
Failure model for silver electrochemical migration
S Yang, A Christou
IEEE Transactions on Device and Materials Reliability 7 (1), 188-196, 2007
852007
Initial stage of silver electrochemical migration degradation
S Yang, J Wu, A Christou
Microelectronics Reliability 46 (9-11), 1915-1921, 2006
802006
Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy
A Georgakilas, J Stoemenos, K Tsagaraki, P Komninou, N Flevaris, ...
Journal of materials research 8 (8), 1908-1921, 1993
671993
Development ot ohmic contacts for GaAs devices using epitaxial Ge films
WT Anderson, A Christou, JE Davey
IEEE Journal of Solid-State Circuits 13 (4), 430-435, 1978
481978
Effect of doping on electron traps in metalorganic molecular‐beam epitaxial GaxIn1−xP/GaAs heterostructures
EC Paloura, A Ginoudi, G Kiriakidis, A Christou
Applied physics letters 59 (24), 3127-3129, 1991
441991
Refractory passivated ion-implanted GaAs ohmic contacts
A Christou, JE Davey
US Patent 4,330,343, 1982
391982
Calculations of optical properties for quaternary III–V semiconductor alloys in the transparent region and above (0.2–4.0 eV)
M Linnik, A Christou
Physica B: Condensed Matter 318 (2-3), 140-161, 2002
362002
Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films
JE Davey, A Christou
US Patent 4,188,710, 1980
361980
Low‐temperature interdiffusion between aluminum thin films and GaAs
A Christou, HM Day
Journal of Applied Physics 47 (9), 4217-4219, 1976
361976
Silicide formation and interdiffusion effects in Si-Ta, SiO2-Ta AND Si-PtSi-Ta thin film structures
A Christou, HM Day
Journal of Electronic Materials 5, 1-12, 1976
361976
Surface treatment of (11̄02) sapphire and (100) silicon for molecular beam epitaxial growth
A Christou, ED Richmond, BR Wilkins, AR Knudson
Applied physics letters 44 (8), 796-798, 1984
341984
Formation of epitaxial si-ge heterostructures by solid phase epitaxy
SM Prokes, WF Tseng, A Christou
US Patent 4,975,387, 1990
331990
How radiation affects polymeric materials
M Al-Sheikhly, A Christou
IEEE transactions on reliability 43 (4), 551-556, 1994
311994
Photoreflectance measurement of strain in epitaxial GaAs on silicon
A Dimoulas, P Tzanetakis, A Georgakilas, OJ Glembocki, A Christou
Journal of applied physics 67 (9), 4389-4392, 1990
291990
Structure and thermal stability of sputtered Au–Ta films
A Christou, H Day
Journal of Applied Physics 44 (8), 3386-3393, 1973
291973
Attachment of DNA probes on gallium arsenide surface
L Mohaddes-Ardabili, LJ Martı́nez-Miranda, J Silverman, A Christou, ...
Applied physics letters 83 (1), 192-194, 2003
282003
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