| Direct imaging of p–n junction in core–shell GaN wires P Tchoulfian, F Donatini, F Levy, A Dussaigne, P Ferret, J Pernot Nano letters 14 (6), 3491-3498, 2014 | 97 | 2014 |
| Observation and modeling of polycrystalline grain formation in Ge2Sb2Te5 GW Burr, P Tchoulfian, T Topuria, C Nyffeler, K Virwani, A Padilla, ... Journal of Applied Physics 111 (10), 2012 | 80 | 2012 |
| High conductivity in Si-doped GaN wires P Tchoulfian, F Donatini, F Levy, B Amstatt, P Ferret, J Pernot Applied Physics Letters 102 (12), 2013 | 39 | 2013 |
| Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires P Tchoulfian, F Donatini, F Levy, B Amstatt, A Dussaigne, P Ferret, ... Applied Physics Letters 103 (20), 2013 | 32 | 2013 |
| Evolution of subcritical nuclei in nitrogen-alloyed Ge2Sb2Te5 K Darmawikarta, S Raoux, P Tchoulfian, T Li, JR Abelson, SG Bishop Journal of Applied Physics 112 (12), 2012 | 29 | 2012 |
| Comparison of three e-beam techniques for electric field imaging and carrier diffusion length measurement on the same nanowires F Donatini, A de Luna Bugallo, P Tchoulfian, G Chicot, C Sartel, V Sallet, ... Nano Letters 16 (5), 2938-2944, 2016 | 25 | 2016 |
| Spectroscopic XPEEM of highly conductive SI-doped GaN wires O Renault, J Morin, P Tchoulfian, N Chevalier, V Feyer, J Pernot, ... Ultramicroscopy 159, 476-481, 2015 | 9 | 2015 |
| Optoelectronic device with light-emitting diodes ZS Chio, WS Tan, V Beix, P Gilet, P Tchoulfian US Patent 10,734,442, 2020 | 5 | 2020 |
| Complete solid state lighting (SSL) line at CEA LETI IC Robin, P Ferret, A Dussaigne, C Bougerol, D Salomon, XJ Chen, ... Thirteenth International Conference on Solid State Lighting 9190, 101-122, 2014 | 4 | 2014 |
| Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance–Voltage Measurement T Lassiaz, P Tchoulfian, F Donatini, J Brochet, R Parize, G Jacopin, ... Nano Letters 21 (8), 3372-3378, 2021 | 3 | 2021 |
| Propriétés électriques, optiques et électro-optiques de microfils GaN pour la réalisation de LEDs P Tchoulfian Université Grenoble Alpes, 2015 | 2 | 2015 |
| Doping and Transport J Pernot, F Donatini, P Tchoulfian Wide Band Gap Semiconductor Nanowires 1: Low‐Dimensionality Effects and …, 2014 | 1 | 2014 |
| Method for producing an optoelectronic device comprising light-emitting diodes which are homogeneous in dimensions P Tchoulfian, B Amstatt US Patent 11,894,413, 2024 | | 2024 |
| Method of forming a dielectric collar for semiconductor wires WS Tan, PR Fonseca, P Tchoulfian US Patent App. 17/767,608, 2023 | | 2023 |
| Optoelectronic device and manufacturing method B Amstatt, P Tchoulfian, J Napierala US Patent App. 18/004,002, 2023 | | 2023 |
| GaN-on-silicon nanowire technology for microLED devices. P Tchoulfian, U Steegmueller, B Amstatt, M Broell, P Gilet Light-Emitting Devices, Materials, and Applications XXVII 12441, 49-52, 2023 | | 2023 |
| Optoelectronic device comprising three-dimensional light-emitting diodes P Tchoulfian, B Amstatt, P Gilet US Patent 11,563,147, 2023 | | 2023 |
| Method for local removal of semiconductor wires P Tchoulfian, PR Fonseca, WS Tan US Patent App. 17/621,058, 2022 | | 2022 |
| Optoelectronic device with light-emitting diodes a doped region of which incorporates an external segment based on aluminium and gallium nitride P Tchoulfian, B Amstatt US Patent App. 17/613,252, 2022 | | 2022 |
| Nanoscale dopant profiling in InGaN/GaN core-shell wires by capacitance voltage measurement T Lassiaz, P Tchoulfian, F Donatini, J Brochet, R Parize, G Jacopin, ... Gallium Nitride Materials and Devices XVI 11686, 116861T, 2021 | | 2021 |
Julien PERNOTUniv. Grenoble Alpes - Institut Néel - CNRSVerified email at neel.cnrs.fr
