Yang, K.
Yang, K.
Adresă de e-mail confirmată pe ee.kaist.ac.kr
Citat de
Citat de
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition
K Yang, JR East, GI Haddad
Solid-State Electronics 36 (3), 321-330, 1993
In Vivo Silicon-Based Flexible Radio Frequency Integrated Circuits Monolithically Encapsulated with Biocompatible Liquid Crystal Polymers
GT Hwang, D Im, SE Lee, J Lee, M Koo, SY Park, S Kim, K Yang, SJ Kim, ...
Acs Nano 7 (5), 4545-4553, 2013
Gallium nitride high electron mobility transistor having inner field-plate for high power applications
K Yang, S Lee, K Lee, K Ko
US Patent App. 11/716,446, 2008
Design, modeling, and characterization of monolithically integrated InP-based (1.55/spl mu/m) high-speed (24 Gb/s) pin/HBT front-end photoreceivers
K Yang, AL Gutierrez-Aitken, X Zhang, GI Haddad, P Bhattacharya
Journal of lightwave technology 14 (8), 1831-1839, 1996
High-efficiency class-A power amplifiers with a dual-bias-control scheme
K Yang, GI Haddad, JR East
IEEE Transactions on Microwave Theory and Techniques 47 (8), 1426-1432, 1999
Ka-band 5-bit MMIC phase shifter using InGaAs PIN switching diodes
JG Yang, K Yang
IEEE Microwave and Wireless Components Letters 21 (3), 151-153, 2011
Theoretical and experimental DC characterization of InGaAs-based abrupt emitter HBT's
K Yang, JC Cowles, JR East, GI Haddad
IEEE Transactions on Electron Devices 42 (6), 1047-1058, 1995
16-GHz bandwidth InAlAs-InGaAs monolithically integrated pin/HBT photoreceiver
AL Gutierrez-Aitken, K Yang, X Zhang, GI Haddad, P Bhattacharya, ...
IEEE Photonics Technology Letters 7 (11), 1339-1341, 1995
Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors
K Yang, JR East, GI Haddad
IEEE transactions on electron devices 41 (2), 138-147, 1994
Fabrication method of submicron gate using anisotropic etching
SK Jeon, MJ Kim, KH Yang, YS Kwon
US Patent 6,372,594, 2002
A 1.52 THz RTD Triple-Push Oscillator With a-Level Output Power
J Lee, M Kim, K Yang
IEEE Transactions on Terahertz Science and Technology 6 (2), 336-340, 2015
A self‐consistent model of Γ‐X mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method
JP Sun, RK Mains, K Yang, GI Haddad
Journal of applied physics 74 (8), 5053-5060, 1993
CML-type monostable bistable logic element (MOBILE) using InP-based monolithic RTD/HBT technology
S Choi, B Lee, T Kim, K Yang
Electronics Letters 40 (13), 1, 2004
Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers
JS Rieh, D Klotzkin, O Qasaimeh, LH Lu, K Yang, LPB Katehi, ...
IEEE Photonics Technology Letters 10 (3), 415-417, 1998
A novel high-speed multiplexing IC based on resonant tunneling diodes
S Choi, Y Jeong, J Lee, K Yang
IEEE transactions on nanotechnology 8 (4), 482-486, 2009
High-linearity K-band absorptive-type MMIC switch using GaN PIN-diodes
JG Yang, K Yang
IEEE microwave and wireless components letters 23 (1), 37-39, 2013
Low DC-power Ku-band differential VCO based on an RTD/HBT MMIC technology
S Choi, Y Jeong, K Yang
IEEE Microwave and wireless components letters 15 (11), 742-744, 2005
High dynamic-range CMOS image sensor cell based on self-adaptive photosensing operation
S Lee, K Yang
IEEE transactions on electron devices 53 (7), 1733-1735, 2006
High fmaxInP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE
K Yang, GO Munns, GI Haddad
IEEE Electron Device Letters 18 (11), 553-555, 1997
On-chip FPN calibration for a linear-logarithmic APS using two-step charge transfer
J Lee, I Baek, D Yang, K Yang
IEEE Transactions on Electron Devices 60 (6), 1989-1994, 2013
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