| Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 D Kim, S Cho, NP Butch, P Syers, K Kirshenbaum, S Adam, J Paglione, ... Nature Physics 8 (6), 459-463, 2012 | 443 | 2012 |
| Gate-tunable graphene spin valve S Cho, YF Chen, MS Fuhrer Applied Physics Letters 91 (12), 2007 | 365 | 2007 |
| Charge transport and inhomogeneity near the minimum conductivity point in graphene S Cho, MS Fuhrer Physical Review B 77 (8), 081402, 2008 | 225 | 2008 |
| Insulating behavior in ultrathin bismuth selenide field effect transistors S Cho, NP Butch, J Paglione, MS Fuhrer Nano letters 11 (5), 1925-1927, 2011 | 193 | 2011 |
| Symmetry protected Josephson supercurrents in three-dimensional topological insulators S Cho, B Dellabetta, A Yang, J Schneeloch, Z Xu, T Valla, G Gu, ... Nature communications 4 (1), 1689, 2013 | 145 | 2013 |
| Density inhomogeneity driven percolation metal-insulator transition and dimensional crossover in graphene nanoribbons S Adam, S Cho, MS Fuhrer, SD Sarma Physical review letters 101 (4), 046404, 2008 | 136 | 2008 |
| Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches S Kim, G Myeong, W Shin, H Lim, B Kim, T Jin, S Chang, K Watanabe, ... Nature nanotechnology 15 (3), 203-206, 2020 | 127 | 2020 |
| Aharonov–Bohm oscillations in a quasi-ballistic three-dimensional topological insulator nanowire S Cho, B Dellabetta, R Zhong, J Schneeloch, T Liu, G Gu, MJ Gilbert, ... Nature communications 6 (1), 7634, 2015 | 118 | 2015 |
| Disorder-induced magnetoresistance in a two-dimensional electron system J Ping, I Yudhistira, N Ramakrishnan, S Cho, S Adam, MS Fuhrer Physical review letters 113 (4), 047206, 2014 | 66 | 2014 |
| Topological insulator quantum dot with tunable barriers S Cho, D Kim, P Syers, NP Butch, J Paglione, MS Fuhrer Nano letters 12 (1), 469-472, 2012 | 62 | 2012 |
| Gate-Tunable Reversible Rashba–Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature L Li, J Zhang, G Myeong, W Shin, H Lim, B Kim, S Kim, T Jin, S Cavill, ... ACS nano 14 (5), 5251-5259, 2020 | 53 | 2020 |
| Massless and massive particle-in-a-box states in single-and bi-layer graphene S Cho, M Fuhrer Nano Research 4, 385-392, 2011 | 33 | 2011 |
| Monolayer hexagonal boron nitride tunnel barrier contact for low-power black phosphorus heterojunction tunnel field-effect transistors S Kim, G Myeong, J Park, K Watanabe, T Taniguchi, S Cho Nano Letters 20 (5), 3963-3969, 2020 | 28 | 2020 |
| Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire S Cho, R Zhong, JA Schneeloch, G Gu, N Mason Scientific reports 6 (1), 21767, 2016 | 16 | 2016 |
| Dirac-source diode with sub-unity ideality factor G Myeong, W Shin, K Sung, S Kim, H Lim, B Kim, T Jin, J Park, T Lee, ... Nature Communications 13 (1), 4328, 2022 | 4 | 2022 |
| Steep-slope Schottky diode with cold metal source W Shin, G Myeong, K Sung, S Kim, H Lim, B Kim, T Jin, J Park, ... Applied Physics Letters 120 (24), 2022 | 4 | 2022 |
| Complementary trilayer–bulk black phosphorus heterojunction tunnel field-effect transistor with subthermionic subthreshold swing S Kim, G Myeong, J Park, T Jin, K Watanabe, T Taniguchi, C Lee, S Cho ACS Applied Electronic Materials 2 (11), 3491-3496, 2020 | 4 | 2020 |
| Electrical control of the Rashba-Edelstein effect in a graphene/2H-TaS2 van der Waals heterostructure at room temperature L Li, J Zhang, G Myeong, W Shin, H Lim, B Kim, S Kim, T Jin, B Kim, C Kim, ... arXiv preprint arXiv:1906.10702, 5177-5181, 2019 | 4 | 2019 |
| Evolution of various quantum transport properties in a suspended disordered graphene device by the high bias voltage exposure J Lee, S Jang, S Cho, E Kim Current Applied Physics 16 (7), 731-737, 2016 | 3 | 2016 |
| Minimum conductivity and charge inhomogeneity in Bi2Se3 in the topological regime D Kim, S Cho, N Butch, P Syers, K Kirshenbaum, J Paglione, M Fuhrer APS March Meeting Abstracts 2012, J31. 010, 2012 | 3 | 2012 |
