| Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy NS Savkina, AA Lebedev, DV Davydov, AM Strel'Chuk, AS Tregubova, ... Materials Science and Engineering: B 77 (1), 50-54, 2000 | 67 | 2000 |
| Variable off-time control loop for current-mode floating buck converters in LED driving applications V Anghel, C Bartholomeusz, AG Vasilica, G Pristavu, G Brezeanu IEEE Journal of Solid-State Circuits 49 (7), 1571-1579, 2014 | 57 | 2014 |
| High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures J Fernandez, P Godignon, S Berberich, J Rebollo, G Brezeanu, J Millan Solid-State Electronics 39 (9), 1359-1364, 1996 | 48 | 1996 |
| Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage G Brezeanu, M Badila, B Tudor, J Millan, P Godignon, F Udrea, ... IEEE Transactions on Electron Devices 48 (9), 2148-2153, 2001 | 44 | 2001 |
| Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior G Brezeanu, G Pristavu, F Draghici, M Badila, R Pascu Journal of Applied Physics 122 (8), 2017 | 38 | 2017 |
| 4H-SiC Schottky diodes for temperature sensing applications in harsh environments G Brezeanu, F Draghici, F Craciunioiu, C Boianceanu, F Udrea, F Udrea, ... Materials Science Forum 679, 575-578, 2011 | 35 | 2011 |
| Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing G Pristavu, G Brezeanu, R Pascu, F Drăghici, M Bădilă Materials Science in Semiconductor Processing 94, 64-69, 2019 | 31 | 2019 |
| Silicon carbide (SiC): a short history. an analytical approach for SiC power device design G Brezeanu CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005. 2 …, 2005 | 30 | 2005 |
| A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures G Pristavu, G Brezeanu, M Badila, R Pascu, M Danila, P Godignon Applied Physics Letters 106 (26), 2015 | 29 | 2015 |
| Extreme environment temperature sensor based on silicon carbide Schottky diode I Josan, C Boianceanu, G Brezeanu, V Obreja, M Avram, D Puscasu, ... 2009 International Semiconductor Conference 2, 525-528, 2009 | 29 | 2009 |
| The electron irradiation effects on silicon gate dioxide used for power MOS devices M Badila, P Godignon, J Millan, S Berberich, G Brezeanu Microelectronics Reliability 41 (7), 1015-1018, 2001 | 28 | 2001 |
| Schottky contacts to silicon carbide: Physics, technology and applications F Roccaforte, G Brezeanu, PM Gammon, F Giannazzo, S Rascunà, ... Advancing Silicon Carbide Electronics Technology, I: Metal Contacts to …, 2018 | 27 | 2018 |
| 400° C sensor based on Ni/4H-SiC Schottky diode for reliable temperature monitoring in industrial environments F Draghici, G Brezeanu, G Pristavu, R Pascu, M Badila, A Pribeanu, ... Sensors 19 (10), 2384, 2019 | 23 | 2019 |
| Modelling electrical behaviour of nonuniform Al Si Schottky diodes D Dascalu, G Brezeanu, PA Dan, C Dima Solid-State Electronics 24 (10), 897-904, 1981 | 23 | 1981 |
| Silicon carbide Schottky and ohmic contact process dependence M Badila, G Brezeanu, J Millan, P Godignon, V Banu Diamond and related materials 11 (3-6), 1258-1262, 2002 | 22 | 2002 |
| Termination structures for diamond Schottky barrier diodes M Brezeanu, M Avram, SJ Rashid, GAJ Amaratunga, T Butler, ... 2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006 | 21 | 2006 |
| A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET A Mihaila, F Udrea, G Amaratunga, G Brezeanu 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 …, 2000 | 21 | 2000 |
| A numerical comparison between MOS control and junction control high voltage devices in SiC technology A Mihaila, F Udrea, G Brezeanu, G Amaratunga Solid-State Electronics 47 (4), 607-615, 2003 | 20 | 2003 |
| Analysis of static and dynamic behaviour of SiC and Si devices connected in cascode configuration A Mihaila, F Udrea, R Azar, G Brezeanu 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No …, 2001 | 20 | 2001 |
| High temperature sensors based on silicon carbide (SiC) devices G Brezeanu, M Badila, F Draghici, R Pascu, G Pristavu, F Craciunoiu, ... 2015 International Semiconductor Conference (CAS), 3-10, 2015 | 19 | 2015 |
