Aleksey Andreev

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	Toate	Din 2019
Referințe bibliografice	3799	632
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Eoin O'ReillyProfessor Emeritus, Tyndall National InstituteAdresă de e-mail confirmată pe tyndall.ie
Alfred AdamsProfessor of Physics, University of SurreyAdresă de e-mail confirmată pe surrey.ac.uk
Stephen J SweeneyProfessor of Photonics and Nanotechnology, James Watt School of Engineering, University of GlasgowAdresă de e-mail confirmată pe glasgow.ac.uk
Dr Igor MarkoResearch Fellow, University of Glasgow, GlasgowAdresă de e-mail confirmată pe glasgow.ac.uk
M S SkolnickProfessor of Physics, University of SheffieldAdresă de e-mail confirmată pe sheffield.ac.uk
Stanko TomicFInstP, Chair in Photonics, University of Salford, STFC Daresbury Laboratories, University of SurreyAdresă de e-mail confirmată pe salford.ac.uk
Mark HopkinsonUniversity of SheffieldAdresă de e-mail confirmată pe sheffield.ac.uk
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikAdresă de e-mail confirmată pe pdi-berlin.de
Andrey A. Lipovskii (Липовский АА)Alferov University and Peter the Great St.Petersburg Polytechnic University (SPbPU)Adresă de e-mail confirmată pe spbau.ru
Johann Peter ReithmaierInstitute of Nanostructure Technologies and Analytics (INA), University of KasselAdresă de e-mail confirmată pe ina.uni-kassel.de
Stelios ChoulisProfessor, Cyprus University of Technology, Head of MEP Research UnitAdresă de e-mail confirmată pe cut.ac.cy
Anthony M FoxProfessor of Optical Physics, University of SheffieldAdresă de e-mail confirmată pe sheffield.ac.uk
Dmitry FirsovPeter the Great St. Petersburg Polytechnic University (SPbPU)Adresă de e-mail confirmată pe rphf.spbstu.ru
Vadim A. Shalygin (Шалыгин В.А.)Peter the Great St.Petersburg Polytechnic University (SPbPU)Adresă de e-mail confirmată pe rphf.spbstu.ru
Ben MurdinUniversity of SurreyAdresă de e-mail confirmată pe surrey.ac.uk

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Aleksey Andreev

Scientist and Company Director, A-Modelling Solutions Ltd.

Adresă de e-mail confirmată pe amodelling.com

nanostructures semiconductor devices lasers theory


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Theory of the electronic structure of GaN/AlN hexagonal quantum dots AD Andreev, EP O’reilly Physical Review B 62 (23), 15851, 2000	445	2000
Strain distributions in quantum dots of arbitrary shape AD Andreev, JR Downes, DA Faux, EP O’reilly Journal of Applied Physics 86 (1), 297-305, 1999	284	1999
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ... Selected Topics in Quantum Electronics, IEEE Journal of 8 (4), 801-810, 2002	209	2002
Mechanism of suppression of Auger recombination processes in type‐II heterostructures GG Zegrya, AD Andreev Applied Physics Letters 67 (18), 2681-2683, 1995	205	1995
Calculation of electric field and optical transitions in InGaN∕ GaN quantum wells UME Christmas, AD Andreev, DA Faux Journal of applied physics 98 (7), 2005	176	2005
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ... Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1228-1238, 2003	176	2003
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008	135	2008
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots AD Andreev, EP O’Reilly Applied Physics Letters 79 (4), 521-523, 2001	124	2001
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons AI Tartakovskii, MN Makhonin, IR Sellers, J Cahill, AD Andreev, ... Physical Review B—Condensed Matter and Materials Physics 70 (19), 193303, 2004	111	2004
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ... Applied Physics Letters 87 (21), 211114-211114-3, 2005	109	2005
Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots AD Andreev, AA Lipovskii Physical Review B 59 (23), 15402, 1999	109	1999
Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots DP Williams, AD Andreev, EP O’Reilly, DA Faux Physical Review B—Condensed Matter and Materials Physics 72 (23), 235318, 2005	101	2005
Structural analysis of strained quantum dots using nuclear magnetic resonance EA Chekhovich, KV Kavokin, J Puebla, AB Krysa, M Hopkinson, ... Nature nanotechnology 7 (10), 646-650, 2012	100	2012
InSb1− xNx growth and devices T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ... Solid-State Electronics 47 (3), 387-394, 2003	88	2003
The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1300-1307, 2003	81	2003
Strain distribution in GaN∕ AlN quantum-dot superlattices E Sarigiannidou, E Monroy, B Daudin, JL Rouvière, AD Andreev Applied Physics Letters 87 (20), 2005	78	2005
Optical absorption in PbSe spherical quantum dots embedded in glass matrix AD Andreev, EV Kolobkova, AA Lipovskii Journal of Applied Physics 88 (2), 750-757, 2000	52	2000
Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters AD Andreev, EP OReilly Applied Physics Letters 87 (21), 213106-213106-3, 2005	50	2005
Theory of conduction band structure of and dilute nitride alloys A Lindsay, EP O’Reilly, AD Andreev, T Ashley Physical Review B—Condensed Matter and Materials Physics 77 (16), 165205, 2008	48	2008
Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure AD Andreev, EP O’Reilly Applied physics letters 84 (11), 1826-1828, 2004	43	2004

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