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Matteo Buffolo
Matteo Buffolo
Postdoctoral researcher, University of Padova
Verified email at dei.unipd.it
Title
Cited by
Cited by
Year
GaN-based power devices: Physics, reliability, and perspectives
M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 2021
3132021
Laser-based lighting: experimental analysis and perspectives
N Trivellin, M Yushchenko, M Buffolo, C De Santi, M Meneghini, ...
Materials 10 (10), 1166, 2017
682017
Defects and reliability of GaN‐based LEDs: review and perspectives
M Buffolo, A Caria, F Piva, N Roccato, C Casu, C De Santi, N Trivellin, ...
physica status solidi (a) 219 (8), 2100727, 2022
522022
Long-term degradation mechanisms of mid-power LEDs for lighting applications
M Buffolo, C De Santi, M Meneghini, D Rigon, G Meneghesso, E Zanoni
Microelectronics Reliability 55 (9-10), 1754-1758, 2015
442015
UV-based technologies for SARS-CoV2 inactivation: Status and perspectives
N Trivellin, F Piva, D Fiorimonte, M Buffolo, C De Santi, VT Orlandi, ...
Electronics 10 (14), 1703, 2021
412021
Inactivating SARS-CoV-2 using 275 nm UV-C LEDs through a spherical irradiation box: Design, characterization and validation
N Trivellin, M Buffolo, F Onelia, A Pizzolato, M Barbato, VT Orlandi, ...
Materials 14 (9), 2315, 2021
352021
Reliability of commercial UVC LEDs: 2022 state-of-the-art
N Trivellin, D Fiorimonte, F Piva, M Buffolo, C De Santi, G Meneghesso, ...
Electronics 11 (5), 728, 2022
292022
Failure causes and mechanisms of retrofit LED lamps
C De Santi, M Dal Lago, M Buffolo, D Monti, M Meneghini, G Meneghesso, ...
Microelectronics Reliability 55 (9-10), 1765-1769, 2015
282015
Physical origin of the optical degradation of InAs quantum dot lasers
M Buffolo, F Samparisi, C De Santi, D Jung, J Norman, JE Bowers, ...
IEEE Journal of Quantum Electronics 55 (3), 1-7, 2019
272019
Current induced degradation study on state of the art DUV LEDs
N Trivellin, D Monti, C De Santi, M Buffolo, G Meneghesso, E Zanoni, ...
Microelectronics Reliability 88, 868-872, 2018
272018
Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation
C De Santi, M Fregolent, M Buffolo, MH Wong, M Higashiwaki, ...
Applied Physics Letters 117 (26), 2020
262020
Degradation processes of 280 nm high power DUV LEDs: Impact on parasitic luminescence
N Trivellin, D Monti, F Piva, M Buffolo, C De Santi, E Zanoni, ...
Japanese Journal of Applied Physics 58 (SC), SCCC19, 2019
262019
Failures of LEDs in real-world applications: A review
N Trivellin, M Meneghini, M Buffolo, G Meneghesso, E Zanoni
IEEE Transactions on Device and Materials Reliability 18 (3), 391-396, 2018
262018
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics
N Roccato, F Piva, C De Santi, R Brescancin, K Mukherjee, M Buffolo, ...
Journal of Physics D: Applied Physics 54 (42), 425105, 2021
242021
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability: From leakage current analysis to gate stack optimization
K Mukherjee, C De Santi, M Borga, K Geens, S You, B Bakeroot, ...
Materials 14 (9), 2316, 2021
212021
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs
C De Santi, M Buffolo, N Renso, A Neviani, G Meneghesso, E Zanoni, ...
Applied Physics Express 12 (5), 052007, 2019
212019
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon
M Buffolo, F Samparisi, L Rovere, C De Santi, D Jung, J Norman, ...
IEEE Journal of Selected Topics in Quantum Electronics 26 (2), 1-8, 2019
202019
Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- DBR Laser Diodes
M Buffolo, M Meneghini, C De Santi, ML Davenport, JE Bowers, ...
IEEE Journal of Quantum Electronics 53 (4), 1-8, 2017
182017
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
M Fregolent, M Buffolo, C De Santi, S Hasegawa, J Matsumura, ...
Journal of Physics D: Applied Physics 54 (34), 345109, 2021
172021
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
N Roccato, F Piva, C De Santi, M Buffolo, M Fregolent, M Pilati, N Susilo, ...
Applied Physics Letters 122 (16), 2023
162023
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