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K. J. Dwyer
K. J. Dwyer
Verified email at terpmail.umd.edu
Title
Cited by
Cited by
Year
Enriching 28Si beyond 99.9998% for semiconductor quantum computing
KJ Dwyer, JM Pomeroy, DS Simons, KL Steffens, JW Lau
Journal of Physics D: Applied Physics 47 (34), 345105, 2014
302014
STM-induced desorption and lithographic patterning of Cl–Si (100)-(2 1)
KJ Dwyer, M Dreyer, RE Butera
The Journal of Physical Chemistry A 123 (50), 10793-10803, 2019
282019
B-Doped δ-Layers and Nanowires from Area-Selective Deposition of BCl3 on Si(100)
KJ Dwyer, S Baek, A Farzaneh, M Dreyer, JR Williams, RE Butera
ACS Applied Materials & Interfaces 13 (34), 41275-41286, 2021
192021
AlCl3-Dosed Si(100)-2 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al
MS Radue, S Baek, A Farzaneh, KJ Dwyer, Q Campbell, AD Baczewski, ...
The Journal of Physical Chemistry C 125 (21), 11336-11347, 2021
182021
Temperature-dependent 29Si incorporation during deposition of highly enriched 28Si films
KJ Dwyer, HS Kim, DS Simons, JM Pomeroy
Physical Review Materials 1 (064603), 2017
122017
Reaction of Hydrazine with Solution-and Vacuum-Prepared Selectively Terminated Si (100) Surfaces: Pathways to the Formation of Direct Si–N Bonds
D Silva-Quinones, C He, KJ Dwyer, RE Butera, GT Wang, AV Teplyakov
Langmuir 36 (43), 12866-12876, 2020
102020
The stability of Cl-, Br-, and I-passivated Si (100)-(2 1) in ambient environments for atomically-precise pattern preservation
E Frederick, KJ Dwyer, GT Wang, S Misra, RE Butera
Journal of Physics: Condensed Matter 33 (44), 444001, 2021
92021
99.996% 12C films isotopically enriched and deposited in situ
KJ Dwyer, JM Pomeroy, DS Simons
Applied Physics Letters 102 (25), 2013
42013
In Situ Enrichment and Epitaxial Growth of 28Si Films via Ion Beam Deposition
KJ Dwyer
University of Maryland, College Park, 2017
2017
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