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David Tremouilles
David Tremouilles
CNRS research Fellow, LAAS University of Toulouse
Adresă de e-mail confirmată pe laas.fr
Titlu
Citat de
Citat de
Anul
Design methodology for MuGFET ESD protection devices
S Thijs, D Linten, DE Trémouilles
US Patent 7,923,266, 2011
1962011
Insight into boron-doped diamond Raman spectra characteristic features
V Mortet, ZV ®ivcová, A Taylor, O Frank, P Hubík, D Trémouilles, F Jomard, ...
Carbon 115, 279-284, 2017
1082017
Analysis of heavily boron-doped diamond Raman spectrum
V Mortet, A Taylor, ZV ®ivcová, D Machon, O Frank, P Hubík, ...
Diamond and Related Materials 88, 163-166, 2018
672018
Analysis and compact modeling of a vertical grounded-base npn bipolar transistor used as ESD protection in a smart power technology
G Bertrand, C Delage, M Bafleur, N Nolhier, JM Dorkel, Q Nguyen, ...
IEEE Journal of Solid-State Circuits 36 (9), 1373-1381, 2001
532001
T-diodes-a novel plug-and-play wideband RF circuit ESD protection methodology
D Linten, S Thijs, J Borremans, M Dehan, D Tremouilles, M Scholz, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
512007
Calibrated wafer-level HBM measurements for quasi-static and transient device analysis
M Scholz, S Thijs, D Linten, D Tremouilles, M Sawada, T Nakaei, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
502007
Size effect on properties of varistors made from zinc oxide nanoparticles through low temperature spark plasma sintering
LS Macary, ML Kahn, C Estournès, P Fau, D Trémouilles, M Bafleur, ...
Advanced Functional Materials 19 (11), 1775-1783, 2009
42*2009
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation
F Boige, F Richardeau, D Trémouilles, S Lefebvre, G Guibaud
Microelectronics Reliability 76, 500-506, 2017
362017
Physical origin of the gate current surge during short-circuit operation of SiC MOSFET
F Boige, D Trémouilles, F Richardeau
IEEE Electron Device Letters 40 (5), 666-669, 2019
352019
Understanding the optimization of sub-45nm FinFET devices for ESD applications
D Tremouilles, S Thijs, C Russ, J Schneider, C Duvvury, N Collaert, ...
2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007
342007
Transient voltage overshoot in TLP testing—Real or artifact?
D Tremouilles, S Thijs, P Roussel, MI Natarajan, V Vassilev, ...
2005 Electrical Overstress/Electrostatic Discharge Symposium, 1-9, 2005
342005
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation
N Monnereau, F Caignet, D Tremouilles, N Nolhier, M Bafleur
Microelectronics Reliability 53 (2), 221-228, 2013
332013
Next generation bulk FinFET devices and their benefits for ESD robustness
A Griffoni, S Thijs, C Russ, D Trémouilles, D Linten, M Scholz, N Collaert, ...
2009 31st EOS/ESD Symposium, 1-10, 2009
322009
Behavioral-modeling methodology to predict Electrostatic-Discharge susceptibility failures at system level: An IBIS improvement
N Monnereau, F Caignet, N Nolhier, D Trémouilles, M Bafleur
10th International Symposium on Electromagnetic Compatibility, 457-463, 2011
292011
Investigation of modeling system ESD failure and probability using IBIS ESD models
N Monnereau, F Caignet, N Nolhier, M Bafleur, D Tremouilles
IEEE Transactions on Device and Materials Reliability 12 (4), 599-606, 2012
282012
Design methodology of FinFET devices that meet IC-Level HBM ESD targets
S Thijs, C Russ, D Tremouilles, A Griffoni, D Linten, M Scholz, N Collaert, ...
EOS/ESD 2008-2008 30th Electrical Overstress/Electrostatic Discharge …, 2008
242008
Electronic circuit and method of manufacturing an electronic circuit
C Russ, D Trémouilles, S Thijs
US Patent 7,687,859, 2010
232010
Backside localization of current leakage faults using thermal laser stimulation
R Desplats, F Beaudoin, P Perdu, P Poirier, D Trémouilles, M Bafleur, ...
Microelectronics Reliability 41 (9-10), 1539-1544, 2001
222001
A system-level electrostatic-discharge-protection modeling methodology for time-domain analysis
N Monnereau, F Caignet, D Tremouilles, N Nolhier, M Bafleur
IEEE transactions on electromagnetic compatibility 55 (1), 45-57, 2012
202012
Characterization and optimization of sub-32-nm FinFET devices for ESD applications
S Thijs, D Tremouilles, C Russ, A Griffoni, N Collaert, R Rooyackers, ...
IEEE transactions on electron devices 55 (12), 3507-3516, 2008
202008
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