Adrian Slav
Adrian Slav
National Institute of Materials Physics, Bucharest, ROMANIA
Adresă de e-mail confirmată pe infim.ro
Citat de
Citat de
Hydroxyapatite films obtained by sol–gel and sputtering
TF Stoica, C Morosanu, A Slav, T Stoica, P Osiceanu, C Anastasescu, ...
Thin Solid Films 516 (22), 8112-8116, 2008
Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
AM Lepadatu, A Slav, C Palade, I Dascalescu, M Enculescu, S Iftimie, ...
Scientific Reports 8 (1), 4898, 2018
Optical characterization of TiO2-Ge nanocomposite films obtained by reactive magnetron sputtering
A Slav
Dig. J. Nanomater. Biostructuct 6 (3), 915-920, 2011
How morphology determines the charge storage properties of Ge nanocrystals in HfO2
A Slav, C Palade, AM Lepadatu, ML Ciurea, VS Teodorescu, S Lazanu, ...
Scripta Materialia 113, 135-138, 2016
Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
I Stavarache, AM Lepadatu, NG Gheorghe, RM Costescu, GE Stan, ...
Journal of Nanoparticle Research 13, 221-232, 2011
Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
AM Lepadatu, C Palade, A Slav, AV Maraloiu, S Lazanu, T Stoica, ...
Nanotechnology 28 (17), 175707, 2017
GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
A Slav, I Dascalescu, AM Lepadatu, C Palade, NC Zoita, H Stroescu, ...
ACS Applied Materials & Interfaces 12 (50), 56161-56171, 2020
A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO 2 nanocrystals stabilized by HfO 2 capping and self-controlled Ge doping
C Palade, AM Lepadatu, A Slav, O Cojocaru, A Iuga, VA Maraloiu, ...
Journal of Materials Chemistry C 9 (36), 12353-12366, 2021
GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
A Slav, C Palade, C Logofatu, I Dascalescu, AM Lepadatu, I Stavarache, ...
ACS Applied Nano Materials 2 (6), 3626-3635, 2019
Epitaxial GeSn obtained by high power impulse magnetron sputtering and the heterojunction with embedded GeSn nanocrystals for shortwave infrared detection
I Dascalescu, NC Zoita, A Slav, E Matei, S Iftimie, F Comanescu, ...
ACS applied materials & interfaces 12 (30), 33879-33886, 2020
Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
C Palade, A Slav, AM Lepadatu, I Stavarache, I Dascalescu, AV Maraloiu, ...
Nanotechnology 30 (44), 445501, 2019
Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
C Palade, AM Lepadatu, A Slav, S Lazanu, VS Teodorescu, T Stoica, ...
Applied Surface Science 428, 698-702, 2018
Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe–TiO2 Films and Multilayers
AM Lepadatu, C Palade, A Slav, O Cojocaru, VA Maraloiu, S Iftimie, ...
The Journal of Physical Chemistry C 124 (45), 25043-25053, 2020
Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared
C Palade, AM Lepadatu, A Slav, VS Teodorescu, T Stoica, ML Ciurea, ...
Materials 14 (22), 7040, 2021
Effects produced by iodine irradiation on high resistivity silicon
S Lazanu, A Slav, AM Lepadatu, I Stavarache, C Palade, G Iordache, ...
Applied Physics Letters 101 (24), 2012
Thickness dependence of crystallization process for hydroxyapatite thin films
I Mercioniu, S Ciuca, I Pasuk, A Slav, C Morosanu, M Bercu
Journal of optoelectronics and advanced materials 9 (8), 2535-2538, 2007
Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
C Palade, A Slav, AM Lepadatu, AV Maraloiu, I Dascalescu, S Iftimie, ...
Applied Physics Letters 113 (21), 2018
Photosensitive GeSi/TiO2multilayers in VIS-NIR
C Palade, I Dascalescu, A Slav, AM Lepadatu, S Lazanu, T Stoica, ...
2017 International Semiconductor Conference (CAS), 67-70, 2017
SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
C Palade, A Slav, O Cojocaru, VS Teodorescu, T Stoica, ML Ciurea, ...
Coatings 12 (3), 348, 2022
Rough bioglass films prepared by magnetron sputtering
A Slav, A Ianculescu, C Morosanu, A Saranti, I Koutselas, S Agathopoulos, ...
Key Engineering Materials 361, 245-248, 2008
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