Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition KJ Park, JM Doub, T Gougousi, GN Parsons
Applied Physics Letters 86 (5), 2005
184 2005 Tip-enhanced strong coupling spectroscopy, imaging, and control of a single quantum emitter KD Park, MA May, H Leng, J Wang, JA Kropp, T Gougousi, M Pelton, ...
Science advances 5 (7), eaav5931, 2019
141 2019 Photodissociation study of T Gougousi, PC Samartzis, TN Kitsopoulos
The Journal of chemical physics 108 (14), 5742-5746, 1998
133 1998 Properties of atomic layer deposited HfO2 thin films JC Hackley, T Gougousi
Thin Solid Films 517 (24), 6576-6583, 2009
119 2009 Atmospheric pressure plasma enhanced chemical vapor deposition of hydrophobic coatings using fluorine-based liquid precursors JH Yim, V Rodriguez-Santiago, AA Williams, T Gougousi, DD Pappas, ...
Surface and Coatings Technology 234, 21-32, 2013
117 2013 Deposition of yttrium oxide thin films in supercritical carbon dioxide T Gougousi, Z Chen
Thin Solid Films 516 (18), 6197-6204, 2008
117 2008 Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon T Gougousi, MJ Kelly, DB Terry, GN Parsons
Journal of applied physics 93 (3), 1691-1696, 2003
102 2003 Metal Oxide Thin Films Deposited from Metal Organic Precursors in Supercritical CO2 Solutions T Gougousi, D Barua, ED Young, GN Parsons
Chemistry of materials 17 (20), 5093-5100, 2005
86 2005 Recombination of H3+ and D3+ ions in a flowing afterglow plasma T Gougousi, R Johnsen, MF Golde
International Journal of Mass Spectrometry and Ion Processes 149, 131-151, 1995
79 1995 Electron-ion recombination rate coefficient measurements in a flowing afterglow plasma T Gougousi, MF Golde, R Johnsen
Chemical physics letters 265 (3-5), 399-403, 1997
75 1997 Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si JC Hackley, T Gougousi, JD Demaree
Journal of Applied Physics 102 (3), 2007
72 2007 Carbonate formation during post-deposition ambient exposure of high- T Gougousi, D Niu, RW Ashcraft, GN Parsons
Applied Physics Letters 83 (17), 3543-3545, 2003
72 2003 High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
67 2013 Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces JC Hackley, JD Demaree, T Gougousi
Applied Physics Letters 92 (16), 2008
62 2008 Photofragmentation study of Cl2 using ion imaging PC Samartzis, I Sakellariou, T Gougousi, TN Kitsopoulos
The Journal of chemical physics 107 (1), 43-48, 1997
62 1997 Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors DA Deen, DF Storm, R Bass, DJ Meyer, DS Katzer, SC Binari, JW Lacis, ...
Applied Physics Letters 98 (2), 2011
61 2011 Measurement of the absolute yield of MP Skrzypkowski, T Gougousi, R Johnsen, MF Golde
The Journal of chemical physics 108 (20), 8400-8407, 1998
55 1998 Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces T Gougousi, JW Lacis
Thin Solid Films 518 (8), 2006-2009, 2010
53 2010 Langmuir-probe measurements in flowing-afterglow plasmas R Johnsen, EV Shun’ko, T Gougousi, MF Golde
Physical Review E 50 (5), 3994, 1994
53 1994 The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions T Gougousi, MJ Kelly, GN Parsons
Applied Physics Letters 80 (23), 4419-4421, 2002
46 2002 
Jaron A. KroppGeneral Technical Services, LLCAdresă de e-mail confirmată pe umbc.edu
