Maura Pavesi
Maura Pavesi
Dept. of Marhematical, Physical and Computer Sciences - Univ.of Parma ITALY
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Accelerated life test of high brightness light emitting diodes
L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008
Thermal stability of ε-Ga2O3 polymorph
R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ...
Acta Materialia 140, 411-416, 2017
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ...
Materials chemistry and physics 205, 502-507, 2018
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes
F Rossi, M Pavesi, M Meneghini, G Salviati, M Manfredi, G Meneghesso, ...
Journal of applied physics 99 (5), 2006
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress
M Pavesi, M Manfredi, G Salviati, N Armani, F Rossi, G Meneghesso, ...
Applied physics letters 84 (17), 3403-3405, 2004
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes
M Meneghini, N Trivellin, M Pavesi, M Manfredi, U Zehnder, B Hahn, ...
Applied Physics Letters 95 (17), 2009
Study of surface treatment effects on the metal-CdZnTe interface
L Marchini, A Zappettini, E Gombia, R Mosca, M Lanata, M Pavesi
IEEE Transactions on Nuclear Science 56 (4), 1823-1826, 2009
Pruritus characteristics in a large Italian cohort of psoriatic patients
G Damiani, S Cazzaniga, RR Conic, L Naldi, Psocare Registry Network, ...
Journal of the European Academy of Dermatology and Venereology 33 (7), 1316-1324, 2019
Latent tuberculosis infection in patients with chronic plaque psoriasis: evidence from the Italian Psocare Registry
P Gisondi, S Cazzaniga, S Chimenti, M Maccarone, M Picardo, ...
British Journal of Dermatology 172 (6), 1613-1620, 2015
Verification of electron distributions in silicon by means of hot carrier luminescence measurements
L Selmi, M Mastrapasqua, DM Boulin, JD Bude, M Pavesi, E Sangiorgi, ...
IEEE Transactions on Electron Devices 45 (4), 802-808, 1998
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material
A Zappettini, M Zha, L Marchini, D Calestani, R Mosca, E Gombia, ...
2008 IEEE Nuclear Science Symposium Conference Record, 118-121, 2008
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence
G Meneghesso, T Grave, M Manfredi, M Pavesi, C Canali, E Zanoni
IEEE Transactions on Electron Devices 47 (1), 2-10, 2000
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique
A Zappettini, M Zha, M Pavesi, L Zanotti
Journal of crystal growth 307 (2), 283-288, 2007
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors
S Picciolini, N Castagnetti, R Vanna, D Mehn, M Bedoni, F Gramatica, ...
RSC advances 5 (113), 93644-93651, 2015
Growth and characterization of CZT crystals by the vertical Bridgman method for X-ray detector applications
A Zappettini, L Marchini, M Zha, G Benassi, N Zambelli, D Calestani, ...
IEEE Transactions on Nuclear Science 58 (5), 2352-2356, 2011
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field
M Zanichelli, A Santi, M Pavesi, A Zappettini
Journal of Physics D: Applied Physics 46 (36), 365103, 2013
Diagnosis of trapping phenomena in GaN MESFETs
G Meneghesso, A Chini, E Zanoni, M Manfredi, M Pavesi, B Boudart, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
Right ventricular end-diastolic volume index as a predictor of preload status in patients with low right ventricular ejection fraction during orthotopic liver transplantation
A Siniscalchi, M Pavesi, E Piraccini, L De Pietri, V Braglia, F Di Benedetto, ...
Transplantation proceedings 37 (6), 2541-2543, 2005
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs
G Meneghesso, A Mion, A Neviani, M Matloubian, J Brown, M Hafizi, T Liu, ...
International Electron Devices Meeting. Technical Digest, 43-46, 1996
Electron and hole-related luminescence processes in gate injection transistors
M Meneghini, M Scamperle, M Pavesi, M Manfredi, T Ueda, H Ishida, ...
Applied Physics Letters 97 (3), 2010
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