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Lepadatu Ana-Maria
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Stress-induced traps in multilayered structures
ML Ciurea, S Lazanu, I Stavarache, AM Lepadatu, V Iancu, MR Mitroi, ...
Journal of Applied Physics 109 (1), 013717, 2011
452011
Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2
I Stavarache, AM Lepadatu, T Stoica, ML Ciurea
Applied Surface Science 285, 175-179, 2013
362013
Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion–crystallization process
AM Lepadatu, T Stoica, I Stavarache, VS Teodorescu, D Buca, ML Ciurea
Journal of nanoparticle research 15 (10), 1-12, 2013
332013
Dense Ge nanocrystals embedded in TiO 2 with exponentially increased photoconduction by field effect
AM Lepadatu, A Slav, C Palade, I Dascalescu, M Enculescu, S Iftimie, ...
Scientific reports 8 (1), 4898, 2018
312018
The influence of shape and potential barrier on confinement energy levels in quantum dots
AM Lepadatu, I Stavarache, ML Ciurea, V Iancu
Journal of Applied Physics 107 (3), 033721, 2010
312010
Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
I Stavarache, AM Lepadatu, NG Gheorghe, RM Costescu, GE Stan, ...
Journal of Nanoparticle Research 13 (1), 221-232, 2011
272011
Study of Ge nanoparticles embedded in an amorphous SiO2 matrix with photoconductive properties
AM Lepadatu, I Stavarache, TF Stoica, ML Ciurea
Digest J. Nanomater. Bios. 6 (1), 66-73, 2011
272011
How morphology determines the charge storage properties of Ge nanocrystals in HfO2
A Slav, C Palade, AM Lepadatu, ML Ciurea, VS Teodorescu, S Lazanu, ...
Scripta Materialia 113, 135-138, 2016
262016
Structure and electrical transport in films of Ge nanoparticles embedded in SiO 2 matrix
I Stavarache, AM Lepadatu, AV Maraloiu, VS Teodorescu, ML Ciurea
Journal of Nanoparticle Research 14 (7), 1-9, 2012
262012
Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride
I Stavarache, AM Lepadatu, VS Teodorescu, ML Ciurea, V Iancu, ...
Nanoscale research letters 6 (1), 88, 2011
262011
Tuning the properties of Ge and Si nanocrystals based structures by tailoring the preparation conditions Review.
ML Ciurea, AM Lepadatu
Digest Journal of Nanomaterials & Biostructures (DJNB) 10 (1), 2015
252015
Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films
I Stavarache, AM Lepadatu, VS Teodorescu, AC Galca, ML Ciurea
Applied Surface Science 309, 168-174, 2014
192014
Electrical properties related to the structure of GeSi nanostructured films
ML Ciurea, I Stavarache, AM Lepadatu, I Pasuk, VS Teodorescu
physica status solidi (b) 251 (7), 1340-1346, 2014
182014
Nanostructuring of GeTiO amorphous films by pulsed laser irradiation
VS Teodorescu, C Ghica, AV Maraloiu, M Vlaicu, A Kuncser, ML Ciurea, ...
Beilstein journal of nanotechnology 6 (1), 893-900, 2015
162015
Calculation of the quantum efficiency for the absorption on confinement levels in quantum dots
V Iancu, MR Mitroi, AM Lepadatu, I Stavarache, ML Ciurea
Journal of Nanoparticle Research 13 (4), 1605-1612, 2011
162011
GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
A Slav, C Palade, C Logofatu, I Dascalescu, AM Lepadatu, I Stavarache, ...
ACS Applied Nano Materials 2 (6), 3626-3635, 2019
152019
Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
AM Lepadatu, C Palade, A Slav, AV Maraloiu, S Lazanu, T Stoica, ...
Nanotechnology 28 (17), 175707, 2017
142017
Defects in silicon: From bulk crystals to nanostructures
ML Ciurea, V Iancu, S Lazanu, AM Lepadatu, E Rusnac, I Stavarache
Romanian Reports in Physics 60 (3), 735-748, 2008
142008
Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
C Palade, A Slav, AM Lepadatu, I Stavarache, I Dascalescu, AV Maraloiu, ...
Nanotechnology 30 (44), 445501, 2019
112019
Non‐volatile memory devices based on Ge nanocrystals
D Vasilache, A Cismaru, M Dragoman, I Stavarache, C Palade, ...
physica status solidi (a) 213 (2), 255-259, 2016
102016
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