| Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer H Amano, N Sawaki, I Akasaki, Y Toyoda Applied Physics Letters 48 (5), 353-355, 1986 | 3227 | 1986 |
| P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI) H Amano, M Kito, K Hiramatsu, I Akasaki Japanese journal of applied physics 28 (12A), L2112, 1989 | 3022 | 1989 |
| Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells T Takeuchi, S Sota, M Katsuragawa, M Komori, H Takeuchi, HAH Amano, ... Japanese Journal of Applied Physics 36 (4A), L382, 1997 | 1472 | 1997 |
| Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1− xAlxN (0< x≦ 0.4) films grown on sapphire substrate by MOVPE I Akasaki, H Amano, Y Koide, K Hiramatsu, N Sawaki Journal of crystal growth 98 (1-2), 209-219, 1989 | 1143 | 1989 |
| Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters IAI Akasaki, HAH Amano Japanese journal of applied physics 36 (9R), 5393, 1997 | 1029* | 1997 |
| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 892 | 2018 |
| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 805 | 2006 |
| Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect T Takeuchi, C Wetzel, S Yamaguchi, H Sakai, H Amano, I Akasaki, ... Applied physics letters 73 (12), 1691-1693, 1998 | 788 | 1998 |
| The emergence and prospects of deep-ultraviolet light-emitting diode technologies M Kneissl, TY Seong, J Han, H Amano nature photonics 13 (4), 233-244, 2019 | 745 | 2019 |
| Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells T Takeuchi, H Amano, I Akasaki Japanese Journal of Applied Physics 39 (2R), 413, 2000 | 647 | 2000 |
| Shortest wavelength semiconductor laser diode I Akasaki, S Sota, H Sakai, T Tanaka, M Koike, H Amano Electronics Letters 32 (12), 1105-1106, 1996 | 576 | 1996 |
| Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN pn junction LED I Akasaki, H Amano, M Kito, K Hiramatsu Journal of luminescence 48, 666-670, 1991 | 489 | 1991 |
| Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE K Hiramatsu, S Itoh, H Amano, I Akasaki, N Kuwano, T Shiraishi, K Oki Journal of Crystal Growth 115 (1-4), 628-633, 1991 | 469 | 1991 |
| Fabrication of vertically aligned carbon nanowalls using capacitively coupled plasma-enhanced chemical vapor deposition assisted by hydrogen radical injection M Hiramatsu, K Shiji, H Amano, M Hori Applied physics letters 84 (23), 4708-4710, 2004 | 421 | 2004 |
| Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate H Amano, I Akasaki, K Hiramatsu, N Koide, N Sawaki Thin Solid Films 163, 415-420, 1988 | 413 | 1988 |
| Optical properties of strained AlGaN and GaInN on GaN T Takeuchi, H Takeuchi, S Sota, H Sakai, HAH Amano, IAI Akasaki Japanese journal of applied physics 36 (2B), L177, 1997 | 410 | 1997 |
| Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device I Akasaki, H Amano, S Sota, H Sakai, T Tanaka, M Koike Japanese journal of applied physics 34 (11B), L1517, 1995 | 407* | 1995 |
| p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy T Tanaka, A Watanabe, H Amano, Y Kobayashi, I Akasaki, S Yamazaki, ... Applied physics letters 65 (5), 593-594, 1994 | 385 | 1994 |
| The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer A Watanabe, T Takeuchi, K Hirosawa, H Amano, K Hiramatsu, I Akasaki Journal of crystal growth 128 (1-4), 391-396, 1993 | 383 | 1993 |
| Relaxation process of the thermal strain in the GaN/α-Al2O3 heterostructure and determination of the intrinsic lattice constants of GaN free from the strain T Detchprohm, K Hiramatsu, KIK Itoh, IAI Akasaki Japanese journal of applied physics 31 (10B), L1454, 1992 | 370 | 1992 |
Motoaki IwayaMeijo UniversityVerified email at meijo-u.ac.jp
