Paul R. Berger

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Referințe bibliografice	5275	1185
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Sean RommelProfessor, Rochester Institute of TechnologyAdresă de e-mail confirmată pe rit.edu
Tyler GrowdenResearch scientist, US Naval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
Roger K. LakeUniversity of California RiversideAdresă de e-mail confirmată pe ece.ucr.edu
Elliott BrownProfessor of Physics, Ohio Research Scholars Chair in Sensor PhysicsAdresă de e-mail confirmată pe wright.edu
Anisha RameshThe Ohio State UniversityAdresă de e-mail confirmată pe intel.com
Woojun Yoon, Ph.D.Department of EnergyAdresă de e-mail confirmată pe ee.doe.gov
David J. MeyerNaval Research LaboratoryAdresă de e-mail confirmată pe nrl.navy.mil
James KolodzeyUniversity of DelawareAdresă de e-mail confirmată pe udel.edu
Santosh KurinecProfessor of Electrical & Microelectronic EngineeringAdresă de e-mail confirmată pe rit.edu
Donald LupoAdresă de e-mail confirmată pe tut.fi
Alan SeabaughProfessor of Electrical Engineering, University of Notre DameAdresă de e-mail confirmată pe nd.edu
David SimonsScientist Emeritus, National Institute of Standards and TechnologyAdresă de e-mail confirmată pe nist.gov
Karl D. HirschmanRochester Institute of TechnologyAdresă de e-mail confirmată pe rit.edu
Parastou FakhimiPhD Candidate, Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Minjae KimDepartment of Electrical and Computer Engineering, Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Roger LooImec and Ghent UniversityAdresă de e-mail confirmată pe imec.be
Fernando Lisboa TeixeiraProfessor, Electrical and Computer Engineering, The Ohio State UniversityAdresă de e-mail confirmată pe ece.osu.edu
Sagar BhaleraoTampere University, FinlandAdresă de e-mail confirmată pe tuni.fi
Gerhard KlimeckProfessor of Electrical and Computer Engineering, Purdue UniversityAdresă de e-mail confirmată pe purdue.edu
Jeffrey DaultonMIT Lincoln LaboratoryAdresă de e-mail confirmată pe ll.mit.edu

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Paul R. Berger

Professor of Electrical and Computer Engineering, Ohio State University

Adresă de e-mail confirmată pe ieee.org - Pagina de pornire

Quantum Tunneling Printable Semiconductor Si Organic Semiconductors Gallium Nitride


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Role of strain and growth conditions on the growth front profile of In_x Ga_(1-x) As on GaAs during the pseudomorphic growth regime PR Berger, K Chang, P Bhattacharya, J Singh, KK Bajaj Applied Physics Letters 53 (8), 684-686, 1988	320	1988
Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles WJ Yoon, KY Jung, J Liu, T Duraisamy, R Revur, FL Teixeira, S Sengupta, ... Solar Energy Materials and Solar Cells 94 (2), 128-132, 2010	277	2010
Room temperature operation of epitaxially grown Si/SiGe/Si resonant interband tunneling diodes SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ... Applied Physics Letters 73, pp. 2191-2193, 1998	209	1998
Polymer solar cells: P3HT: PCBM and beyond PR Berger, M Kim Journal of Renewable and Sustainable Energy 10 (1), 2018	180	2018
Substantial Improvement by Substrate Misorientation in DC Performance of Al0.5Ga0.5As/GaAs/ Al0.5Ga0.5As Double Heterojunction NpN Bipolar Transistors Grown by Molecular Beam … N Chand, PR Berger, NK Dutta Appl. Phys. Lett 59 (2), 1991	151*	1991
Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography MJ Word, I Adesida, PR Berger Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003	139	2003
Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection Y Xu, PR Berger, JN Wilson, UHF Bunz Applied physics letters 85 (18), 4219-4221, 2004	88	2004
Self-aligned and self-limited quantum dot nanoswitches and methods for making same PR Berger US Patent 7,015,497, 2006	86	2006
Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ... Applied Physics Letters 78 (6), 814-816, 2001	79	2001
4.8% efficient poly (3-hexylthiophene)-fullerene derivative (1: 0.8) bulk heterojunction photovoltaic devices with plasma treated AgO_x/indium tin oxide anode modification WJ Yoon, PR Berger Applied Physics Letters 92 (1), 013306-013306-3, 2008	78	2008
Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ... IEEE electron device letters 25 (9), 646-648, 2004	76	2004
Si-based resonant interband tunneling diodes and method of making interband tunneling diodes PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel US Patent 6,803,598, 2004	75	2004
Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ... IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000	72	2000
Optical and electronic properties of SiGeC alloys grown on Si substrates J Kolodzey, PR Berger, BA Orner, D Hits, F Chen, A Khan, X Shao, ... Journal of crystal growth 157 (1-4), 386-391, 1995	72	1995
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ... Applied Physics Letters 109 (8), 2016	68	2016
peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications N Jin, SY Chung, AT Rice, PR Berger, R Yu, PE Thompson, R Lake Applied physics letters 83 (16), 3308-3310, 2003	65	2003
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger Light: Science & Applications 7 (2), 17150-17150, 2018	63	2018
Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping PK Bhattacharya, S Dhar, P Berger, FY Juang Applied physics letters 49 (8), 470-472, 1986	63	1986
Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ... Solid-State Electronics 48 (10-11), 1907-1910, 2004	62	2004
In0. 53Ga0. 47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts W Gao, AS Khan, PR Berger, RG Hunsperger, G Zydzik, HM O’Bryan, ... Applied physics letters 65 (15), 1930-1932, 1994	62	1994

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