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Sandeep Kumar Chaudhuri
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High resolution alpha particle detection using 4H–SiC epitaxial layers: Fabrication, characterization, and noise analysis
SK Chaudhuri, KJ Zavalla, KC Mandal
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013
842013
Experimental determination of electron-hole pair creation energy in 4H-SiC epitaxial layer: An absolute calibration approach
SK Chaudhuri, KJ Zavalla, KC Mandal
Applied Physics Letters 102 (3), 2013
782013
Low Energy X-Ray and gamma-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer
KC Mandal, PG Muzykov, SK Chaudhuri, JR Terry
IEEE Transaction on Nuclear Sciences 60 (4), 2888-2893, 2013
652013
Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies
AK Mishra, SK Chaudhuri, S Mukherjee, A Priyam, A Saha, D Das
Journal of Applied Physics 102 (10), 2007
562007
Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices
KC Mandal, JW Kleppinger, SK Chaudhuri
Micromachines 11 (3), 254, 2020
492020
Effect of Z1/2, EH5, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies
MA Mannan, SK Chaudhuri, KV Nguyen, KC Mandal
Journal of Applied Physics 115 (22), 2014
492014
Correlation of deep levels with detector performance in 4H-SiC epitaxial schottky barrier alpha detectors
KC Mandal, SK Chaudhuri, KV Nguyen, MA Mannan
IEEE Transactions on Nuclear Science 61 (4), 2338-2344, 2014
482014
Defect levels in Cu2ZnSn (SxSe1− x) 4 solar cells probed by current-mode deep level transient spectroscopy
S Das, SK Chaudhuri, RN Bhattacharya, KC Mandal
Applied Physics Letters 104 (19), 2014
482014
Probing defects in chemically synthesized ZnO nanostrucures by positron annihilation and photoluminescence spectroscopy
SK Chaudhuri, M Ghosh, D Das, AK Raychaudhuri
Journal of applied physics 108 (6), 2010
432010
Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μm epitaxial layers
JW Kleppinger, SK Chaudhuri, OF Karadavut, KC Mandal
Journal of Applied Physics 129 (24), 2021
422021
Large Area Pixelated Detector: Fabrication and Characterization
SK Chaudhuri, K Nguyen, RO Pak, L Matei, V Buliga, M Groza, A Burger, ...
Nuclear Science, IEEE Transactions on 61 (2), 793-798, 2014
362014
Charge transport properties in CdZnTeSe semiconductor room-temperature γ-ray detectors
SK Chaudhuri, M Sajjad, JW Kleppinger, KC Mandal
Journal of Applied Physics 127 (24), 2020
332020
Schottky barrier detectors on 4H-SiC n-type epitaxial layer for alpha particles
SK Chaudhuri, RM Krishna, KJ Zavalla, KC Mandal
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2013
332013
Characterization of Cd0.9Zn0.1Te based virtual Frisch grid detectors for high energy gamma ray detection
RM Krishna, SK Chaudhuri, KJ Zavalla, KC Mandal
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2012
312012
Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects
SK Chaudhuri, JW Kleppinger, KC Mandal
Journal of Applied Physics 128 (11), 2020
292020
Cd0.9Zn0.1Te Crystal Growth and Fabrication of Large Volume Single-Polarity Charge Sensing Gamma Detectors
SK Chaudhuri, RM Krishna, KJ Zavalla, L Matei, V Buliga, M Groza, ...
IEEE Transactions on Nuclear Science 60 (4), 2853 - 2858, 2013
272013
Role of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors
JW Kleppinger, SK Chaudhuri, OF Karadavut, KC Mandal
Applied Physics Letters 119 (6), 2021
212021
Quaternary Semiconductor Cd1-xZnxTe1-ySey for High-Resolution, Room-Temperature Gamma-Ray Detection
SK Chaudhuri, JW Kleppinger, OF Karadavut, R Nag, KC Mandal
Crystals 11 (7), 827, 2021
212021
High-resolution radiation detection using Ni/SiO2/n-4H-SiC vertical metal-oxide-semiconductor capacitor
SK Chaudhuri, OF Karadavut, JW Kleppinger, KC Mandal
Journal of Applied Physics 130 (7), 2021
202021
Biparametric analyses of charge trapping in Cd0.9Zn0.1Te based virtual Frisch grid detectors
SK Chaudhuri, KJ Zavalla, RM Krishna, KC Mandal
Journal of Applied Physics 113 (07), 074504-074510, 2013
202013
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