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Jiayi Shao
Jiayi Shao
Intelligent Epitaxy Technology, Inc.
Verified email at intelliepi.com
Title
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Cited by
Year
20–80nm channel length InGaAs gate-all-around nanowire MOSFETs with EOT= 1.2 nm and lowest SS= 63mV/dec
JJ Gu, XW Wang, H Wu, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye
2012 International Electron Devices Meeting, 27.6. 1-27.6. 4, 2012
1082012
Laser sintered graphene nickel nanocomposites
Z Hu, G Tong, D Lin, Q Nian, J Shao, Y Hu, M Saeib, S Jin, GJ Cheng
Journal of Materials Processing Technology 231, 143-150, 2016
772016
Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free…
D Li, L Tang, C Edmunds, J Shao, G Gardner, MJ Manfra, O Malis
Applied physics letters 100 (25), 252105, 2012
702012
III-V gate-all-around nanowire MOSFET process technology: From 3D to 4D
JJ Gu, XW Wang, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye
2012 International Electron Devices Meeting, 23.7. 1-23.7. 4, 2012
682012
Low-strain quantum dots-in-a-well infrared photodetector
RV Shenoi, RS Attaluri, A Siroya, J Shao, YD Sharma, A Stintz, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer…, 2008
67*2008
Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells
C Edmunds, J Shao, M Shirazi-Hd, MJ Manfra, O Malis
Applied Physics Letters 105 (2), 021109, 2014
652014
Resonant cavity enhanced dots-in-a-well quantum dot infrared photodetector
RS Attaluri, J Shao, KT Posani, SJ Lee, JS Brown, A Stintz, S Krishna
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer…, 2007
622007
Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures
D Li, J Shao, L Tang, C Edmunds, G Gardner, MJ Manfra, O Malis
Semiconductor science and technology 28 (7), 074024, 2013
452013
Surface morphology evolution of m-plane GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature
J Shao, L Tang, C Edmunds, G Gardner, O Malis, M Manfra
Journal of Applied Physics 114 (2), 023508, 2013
412013
Asymmetric 3D Elastic–Plastic Strain‐Modulated Electron Energy Structure in Monolayer Graphene by Laser Shocking
M Motlag, P Kumar, KY Hu, S Jin, J Li, J Shao, X Yi, YH Lin, JC Walrath, ...
Advanced Materials 31 (19), 1900597, 2019
402019
Direct laser writing of nanodiamond films from graphite under ambient conditions
Q Nian, Y Wang, Y Yang, J Li, MY Zhang, J Shao, L Tang, GJ Cheng
Scientific reports 4 (1), 1-8, 2014
392014
Ultrafast and scalable laser liquid synthesis of tin oxide nanotubes and its application in lithium ion batteries
Z Liu, Z Cao, B Deng, Y Wang, J Shao, P Kumar, CR Liu, B Wei, ...
Nanoscale 6 (11), 5853-5858, 2014
392014
Quantum dots-in-a-well focal plane arrays
TE Vandervelde, MC Lenz, E Varley, A Barve, J Shao, RV Shenoi, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1150-1161, 2008
392008
Reduction in dark current using resonant tunneling barriers in quantum dots-in-a-well long wavelength infrared photodetector
AV Barve, SY Shah, J Shao, TE Vandervelde, RV Shenoi, WY Jang, ...
Applied Physics Letters 93 (13), 131115, 2008
382008
Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities
C Edmunds, L Tang, M Cervantes, M Shirazi-Hd, J Shao, A Grier, ...
Physical Review B 88 (23), 235306, 2013
372013
Resonant tunneling barriers in quantum dots-in-a-well infrared photodetectors
A Barve, J Shao, YD Sharma, TE Vandervelde, K Sankalp, SJ Lee, ...
IEEE journal of quantum electronics 46 (7), 1105-1114, 2010
372010
Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors
M Si, JJ Gu, X Wang, J Shao, X Li, MJ Manfra, RG Gordon, PD Ye
Applied Physics Letters 102 (9), 093505, 2013
342013
Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location
C Edmunds, L Tang, J Shao, D Li, M Cervantes, G Gardner, DN Zakharov, ...
Applied Physics Letters 101 (10), 102104, 2012
322012
Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices
A Grier, A Valavanis, C Edmunds, J Shao, JD Cooper, G Gardner, ...
Journal of Applied Physics 118 (22), 224308, 2015
312015
High temperature operation of quantum dots-in-a-well infrared photodetectors
AV Barve, J Montaya, Y Sharma, T Rotter, J Shao, WY Jang, S Meesala, ...
Infrared Physics & Technology 54 (3), 215-219, 2011
312011
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