Siddharth Rajan

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Referințe bibliografice	17612	11817
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Sriram KrishnamoorthyUniversity of California, Santa BarbaraAdresă de e-mail confirmată pe ucsb.edu
Zhanbo XiaPost Doctoral Scholar, ECE, The Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Umesh MishraUCSBAdresă de e-mail confirmată pe ece.ucsb.edu
Digbijoy NathAssociate Professor at Indian Institute of ScienceAdresă de e-mail confirmată pe iisc.ac.in
Yuewei ZhangUCSBAdresă de e-mail confirmată pe ucsb.edu
Jim SpeckProfessor of Materials, UCSBAdresă de e-mail confirmată pe ucsb.edu
Chandan JoishiResearch Scientist, The Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Fatih AkyolYıldız Teknik ÜniversitesiAdresă de e-mail confirmată pe yildiz.edu.tr
Sanyam BajajIntel CorporationAdresă de e-mail confirmată pe intel.com
PIL SUNG PARKTechnology Development Center, Samsung ElectronicsAdresă de e-mail confirmată pe osu.edu
Steven RingelThe Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Aaron ArehartAssistant Research Professor of Electrical and Computer Engineering, The Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Jinwoo HwangAssociate Professor, Materials Science and Engineering, Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Stacia KellerUniversity of California Santa BarbaraAdresă de e-mail confirmată pe ece.ucsb.edu
Steven DenBaarsProfessor of Materials, University of California Santa BarbaraAdresă de e-mail confirmată pe engineering.ucsb.edu
Nidhin Kurian KalarickalAssistant Professor, Electrical Computer and Energy Engineering, Arizona State UniversityAdresă de e-mail confirmată pe asu.edu
Wu Lu, ProfessorThe Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Joe McGloneResearch Scientist, ECE and IMR at Ohio State UniversityAdresă de e-mail confirmată pe osu.edu
Shahadat Hasan SohelIntelAdresă de e-mail confirmată pe intel.com
Roberto C. MyersProfessor of Materials Science, Electrical Engineering, and Physics, The Ohio State UniversityAdresă de e-mail confirmată pe osu.edu

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Siddharth Rajan

Electrical and Computer Engineering, Ohio State University

Adresă de e-mail confirmată pe ece.osu.edu - Pagina de pornire

semiconductors semiconductor devices


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018	1359	2018
Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit DJ O’Hara, T Zhu, AH Trout, AS Ahmed, YK Luo, CH Lee, MR Brenner, ... Nano letters 18 (5), 3125-3131, 2018	746	2018
High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005	605	2005
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020	451	2020
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018	403	2018
p-type doping of MoS2 thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 2014	356	2014
β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022	329	2022
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017	327	2017
Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces P Moetakef, TA Cain, DG Ouellette, JY Zhang, DO Klenov, A Janotti, ... Applied Physics Letters 99 (23), 2011	319	2011
N-polar GaN∕ AlGaN∕ GaN high electron mobility transistors S Rajan, A Chini, MH Wong, JS Speck, UK Mishra Journal of Applied Physics 102 (4), 2007	293	2007
Large area single crystal (0001) oriented MoS2 MR Laskar, L Ma, S Kannappan, P Sung Park, S Krishnamoorthy, ... Applied Physics Letters 102 (25), 2013	275	2013
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ... Applied Physics Letters 110 (22), 2017	268	2017
Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005	259	2005
N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013	254	2013
Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018	248	2018
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004	234	2004
Electrical properties of atomic layer deposited aluminum oxide on gallium nitride M Esposto, S Krishnamoorthy, DN Nath, S Bajaj, TH Hung, S Rajan Applied Physics Letters 99 (13), 2011	207	2011
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems M Su, C Chen, S Rajan Semiconductor Science and Technology 28 (7), 074012, 2013	203	2013
Polarization-engineered GaN/InGaN/GaN tunnel diodes S Krishnamoorthy, DN Nath, F Akyol, PS Park, M Esposto, S Rajan Applied Physics Letters 97 (20), 2010	197	2010
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes F Akyol, DN Nath, S Krishnamoorthy, PS Park, S Rajan Applied Physics Letters 100 (11), 2012	186	2012

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