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Leanne A. H. Jones
Leanne A. H. Jones
Adresă de e-mail confirmată pe materials.ox.ac.uk
Titlu
Citat de
Citat de
Anul
Isotype Heterojunction Solar Cells Using n-Type Sb2Se3 Thin Films
TDC Hobson, LJ Phillips, OS Hutter, H Shiel, JEN Swallow, CN Savory, ...
Chemistry of Materials 32 (6), 2621-2630, 2020
1032020
Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level
JEN Swallow, JB Varley, LAH Jones, JT Gibbon, LFJ Piper, VR Dhanak, ...
APL Materials 7 (2), 2019
862019
Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2
BAD Williamson, TJ Featherstone, SS Sathasivam, JEN Swallow, H Shiel, ...
Chemistry of Materials 32 (5), 1964-1973, 2020
772020
Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells
H Shiel, OS Hutter, LJ Phillips, JEN Swallow, LAH Jones, TJ Featherstone, ...
ACS Applied Energy Materials 3 (12), 11617-11626, 2020
722020
A CO2‐Tolerant Perovskite Oxide with High Oxide Ion and Electronic Conductivity
M Li, H Niu, J Druce, H Téllez, T Ishihara, JA Kilner, H Gasparyan, ...
Advanced Materials 32 (4), 1905200, 2020
692020
Influence of Polymorphism on the Electronic Structure of Ga2O3
JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ...
Chemistry of Materials 32 (19), 8460-8470, 2020
642020
Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
JW Roberts, PR Chalker, B Ding, RA Oliver, JT Gibbon, LAH Jones, ...
Journal of Crystal Growth 528, 125254, 2019
542019
Modular Design via Multiple Anion Chemistry of the High Mobility van der Waals Semiconductor Bi4O4SeCl2
QD Gibson, TD Manning, M Zanella, T Zhao, PAE Murgatroyd, ...
Journal of the American Chemical Society 142 (2), 847-856, 2019
452019
Evidence of a second-order Peierls-driven metal-insulator transition in crystalline
MJ Wahila, G Paez, CN Singh, A Regoutz, S Sallis, MJ Zuba, J Rana, ...
Physical Review Materials 3 (7), 074602, 2019
332019
Tackling Disorder in -Ga O
LE Ratcliff, T Oshima, F Nippert, BM Janzen, E Kluth, R Goldhahn, ...
Advanced Materials 34 (37), 2204217, 2022
282022
Band alignment of Sb2O3 and Sb2Se3
H Shiel, TDC Hobson, OS Hutter, LJ Phillips, MJ Smiles, LAH Jones, ...
Journal of Applied Physics 129 (23), 2021
282021
Sb 5s 2 lone pairs and band alignment of Sb 2 Se 3: a photoemission and density functional theory study
CH Don, H Shiel, TDC Hobson, CN Savory, JEN Swallow, MJ Smiles, ...
Journal of Materials Chemistry C 8 (36), 12615-12622, 2020
282020
Na 2 Fe 2 OS 2, a new earth abundant oxysulphide cathode material for Na-ion batteries
J Gamon, AJ Perez, LAH Jones, M Zanella, LM Daniels, RE Morris, ...
Journal of Materials Chemistry A 8 (39), 20553-20569, 2020
252020
Ge 4s 2 lone pairs and band alignments in GeS and GeSe for photovoltaics
MJ Smiles, JM Skelton, H Shiel, LAH Jones, JEN Swallow, HJ Edwards, ...
Journal of Materials Chemistry A 9 (39), 22440-22452, 2021
232021
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
JT Gibbon, L Jones, JW Roberts, M Althobaiti, PR Chalker, IZ Mitrovic, ...
AIP Advances 8 (6), 2018
232018
Effect of metal doping in Bi2WO6 micro-flowers for enhanced photoelectrochemical water splitting
S Bera, S Samajdar, S Pal, PS Das, LAH Jones, H Finch, VR Dhanak, ...
Ceramics International 48 (23), 35814-35824, 2022
212022
Sn lone pairs and the electronic structure of tin sulphides: A photoreflectance, high-energy photoemission, and theoretical investigation
LAH Jones, WM Linhart, N Fleck, JEN Swallow, PAE Murgatroyd, H Shiel, ...
Physical Review Materials 4 (7), 074602, 2020
182020
Band Alignments, Electronic Structure, and Core-Level Spectra of Bulk Molybdenum Dichalcogenides (MoS2, MoSe2, and MoTe2)
LAH Jones, Z Xing, JEN Swallow, H Shiel, TJ Featherstone, MJ Smiles, ...
The Journal of Physical Chemistry C 126 (49), 21022-21033, 2022
172022
P-type conductivity in Sn-doped Sb2Se3
TDC Hobson, H Shiel, CN Savory, JEN Swallow, LAH Jones, ...
Journal of Physics: Energy 4 (4), 045006, 2022
162022
Investigation of Tm2O3 as a gate dielectric for Ge MOS devices
L ®urauskaitė, L Jones, VR Dhanak, IZ Mitrovic, PE Hellström, M Östling
ECS Transactions 86 (7), 67, 2018
152018
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