| Engineering graphene quantum dots for enhanced ultraviolet and visible light p-Si nanowire-based photodetector I Mihalache, A Radoi, R Pascu, C Romanitan, E Vasile, M Kusko ACS applied materials & interfaces 9 (34), 29234-29247, 2017 | 67 | 2017 |
| High-performance solid state supercapacitors assembling graphene interconnected networks in porous silicon electrode by electrochemical methods using 2, 6-dihydroxynaphthalen C Romanitan, P Varasteanu, I Mihalache, D Culita, S Somacescu, ... Scientific reports 8 (1), 9654, 2018 | 54 | 2018 |
| Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior G Brezeanu, G Pristavu, F Draghici, M Badila, R Pascu Journal of Applied Physics 122 (8), 2017 | 38 | 2017 |
| Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing G Pristavu, G Brezeanu, R Pascu, F Drăghici, M Bădilă Materials Science in Semiconductor Processing 94, 64-69, 2019 | 31 | 2019 |
| A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures G Pristavu, G Brezeanu, M Badila, R Pascu, M Danila, P Godignon Applied Physics Letters 106 (26), 2015 | 29 | 2015 |
| Heteroatom-mediated performance of dye-sensitized solar cells based on T-shaped molecules MD Damaceanu, CP Constantin, AE Bejan, M Mihaila, M Kusko, ... Dyes and Pigments 166, 15-31, 2019 | 23 | 2019 |
| 400° C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments F Draghici, G Brezeanu, G Pristavu, R Pascu, M Badila, A Pribeanu, ... Sensors 19 (10), 2384, 2019 | 23 | 2019 |
| High temperature sensors based on silicon carbide (SiC) devices G Brezeanu, M Badila, F Draghici, R Pascu, G Pristavu, F Craciunoiu, ... 2015 International Semiconductor Conference (CAS), 3-10, 2015 | 19 | 2015 |
| Microstructures and growth characteristics of polyelectrolytes on silicon using layer-by-layer assembly A Bragaru, M Kusko, A Radoi, M Danila, M Simion, F Craciunoiu, R Pascu, ... Open Chemistry 11 (2), 205-214, 2013 | 18 | 2013 |
| 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes R Pascu, G Pristavu, G Brezeanu, F Draghici, P Godignon, C Romanitan, ... Sensors 21 (3), 942, 2021 | 16 | 2021 |
| Analytical characterization of engineered ZnO nanoparticles relevant for hazard assessment A Bragaru, M Kusko, E Vasile, M Simion, M Danila, T Ignat, I Mihalache, ... Journal of nanoparticle research 15, 1-17, 2013 | 16 | 2013 |
| Two packaging solutions for high temperature SiC diode sensors G Brezeanu, F Draghici, M Badila, F Craciunoiu, G Pristavu, R Pascu, ... Materials Science Forum 778, 1063-1066, 2014 | 14 | 2014 |
| Barrier stability of Pt/4H-SiC Schottky diodes used for high temperature sensing G Pristavu, G Brezeanu, M Badila, F Draghici, R Pascu, F Craciunoiu, ... Materials Science Forum 897, 606-609, 2017 | 11 | 2017 |
| High temperature sensor based on SiC Schottky diodes with undoped oxide ramp termination R Pascu, F Draghici, M Badila, F Craciunoiu, G Brezeanu, A Dinescu, ... CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 379-382, 2011 | 11 | 2011 |
| Oxide trap states versus gas sensing in SiC-MOS capacitors–The effect of N-and P-based post oxidation processes R Pascu, F Craciunoiu, G Pristavu, G Brezeanu, M Kusko Sensors and Actuators B: Chemical 245, 911-922, 2017 | 10 | 2017 |
| A new 4H-SiC hydrogen sensor with oxide ramp termination R Pascu, M Kusko, F Craciunoiu, G Pristavu, G Brezeanu, M Badila, ... Materials Science in Semiconductor Processing 42, 268-272, 2016 | 10 | 2016 |
| Temperature behavior of 4H-SiC MOS capacitor used as a gas sensor R Pascu, G Pristavu, M Badila, G Brezeanu, F Draghici, F Craciunoiu 2014 International Semiconductor Conference (CAS), 185-188, 2014 | 10 | 2014 |
| Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges G Brezeanu, G Pristavu, F Draghici, R Pascu, F Della Corte, S Rascuna IEEE Journal of the Electron Devices Society 8, 1339-1344, 2020 | 9 | 2020 |
| A reliable technology for advanced SiC-MOS devices based on fabrication of high quality silicon oxide layers by converting a-Si R Pascu, C Romanitan, P Varasteanu, M Kusko IEEE Journal of the Electron Devices Society 7, 158-167, 2018 | 9 | 2018 |
| The effect of the post-metallization annealing of Ni/n-type 4H-SiC Schottky contact R Pascu, F Craciunoiu, M Kusko, F Draghici, A Dinescu, M Danila CAS 2012 (International Semiconductor Conference) 2, 457-460, 2012 | 9 | 2012 |
