Cheol Seong Hwang

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Min Hyuk ParkSeoul National UniversityAdresă de e-mail confirmată pe snu.ac.kr
Kyung Min KimAssociate Professor, Department of Materials Science and Engineering, KAISTAdresă de e-mail confirmată pe kaist.ac.kr
Hyeong Joon Kim Professor, School of Materials Science and Engineering, College of Engineering, Seoul National UniversityAdresă de e-mail confirmată pe snu.ac.kr
Seong Keun KimKorea Institute of Science and TechnologyAdresă de e-mail confirmată pe kist.re.kr
Han Joon KimSeoul National UniversityAdresă de e-mail confirmată pe snu.ac.kr
Gun Hwan KimAssociate Professor, Yonsei UniversityAdresă de e-mail confirmată pe yonsei.ac.kr
Taehwan MoonDepartment of Intelligence Semiconductor Engineering, Ajou UniversityAdresă de e-mail confirmată pe ajou.ac.kr
Byung Joon ChoiSeoul National University of Science and TechnologyAdresă de e-mail confirmată pe seoultech.ac.kr
Doo Seok JeongHanyang UniversityAdresă de e-mail confirmată pe hanyang.ac.kr
Tae Joo ParkHanyang UniversityAdresă de e-mail confirmată pe hanyang.ac.kr
Jung Ho YoonAssistant Professor at Sungkyunkwan UniversityAdresă de e-mail confirmată pe skku.edu
Jeong Hwan HanSeoul National University of Science and Technology (SEOULTECH)Adresă de e-mail confirmată pe seoultech.ac.kr
Jung-Hae ChoiPrincipal Research Scientist, Korea Institute of Science and TechnologyAdresă de e-mail confirmată pe kist.re.kr
Kyung Jean YoonIntel Santa ClaraAdresă de e-mail confirmată pe intel.com
Woongkyu LeeSoongsil UniversityAdresă de e-mail confirmată pe ssu.ac.kr
Young Hwan LeeSeoul National UniversityAdresă de e-mail confirmată pe snu.ac.kr
Seungwu HanSeoul National UniversityAdresă de e-mail confirmată pe snu.ac.kr
Woojin JEONKyung Hee UniversityAdresă de e-mail confirmată pe khu.ac.kr
Deok-Yong ChoJeonbuk National UniversityAdresă de e-mail confirmată pe jbnu.ac.kr
Hyeon Woo ParkPostdoctoral researcher, Georgia Institute of TechnologyAdresă de e-mail confirmată pe gatech.edu

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Cheol Seong Hwang

Professor, Department of Materials Science and Engineering, Seoul National University

Adresă de e-mail confirmată pe snu.ac.kr - Pagina de pornire

Materials Science Semiconductor Devices Thin film Fabrication


Titlu Sortați după descrierea bibliografică Sortați după an Sortați după titlu	Citat de Citat de	Anul
Atomic structure of conducting nanofilaments in TiO₂ resistive switching memory DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ... Nature nanotechnology 5 (2), 148-153, 2010	2396	2010
Multifunctional wearable devices for diagnosis and therapy of movement disorders D Son, J Lee, S Qiao, R Ghaffari, J Kim, JE Lee, C Song, SJ Kim, DJ Lee, ... Nature nanotechnology 9 (5), 397-404, 2014	1552	2014
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ... Journal of applied physics 98 (3), 2005	1473	2005
Emerging memories: resistive switching mechanisms and current status DS Jeong, R Thomas, RS Katiyar, JF Scott, H Kohlstedt, A Petraru, ... Reports on progress in physics 75 (7), 076502, 2012	1234	2012
Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015	1104	2015
Resistive switching materials for information processing Z Wang, H Wu, GW Burr, CS Hwang, KL Wang, Q Xia, JJ Yang Nature Reviews Materials 5 (3), 173-195, 2020	946	2020
Evolution of phases and ferroelectric properties of thin Hf0. 5Zr0. 5O2 films according to the thickness and annealing temperature M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang Applied Physics Letters 102 (24), 2013	783	2013
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook KM Kim, DS Jeong, CS Hwang Nanotechnology 22 (25), 254002, 2011	761	2011
Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 2007	513	2007
Review and perspective on ferroelectric HfO2-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang Mrs Communications 8 (3), 795-808, 2018	506	2018
A Resistive Memory in Semiconducting BiFeO₃ Thin‐Film Capacitors AQ Jiang, C Wang, KJ Jin, XB Liu, JF Scott, CS Hwang, TA Tang, HB Lu, ... Advanced Materials 23 (10), 1277-1281, 2011	468	2011
The effects of crystallographic orientation and strain of thin Hf0. 5Zr0. 5O2 film on its ferroelectricity M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang Applied Physics Letters 104 (7), 2014	440	2014
A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ... Advanced Functional Materials 24 (34), 5316-5339, 2014	416	2014
Identification of a determining parameter for resistive switching of TiO2 thin films C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang Applied Physics Letters 86 (26), 2005	414	2005
High dielectric constant TiO2 thin films on a Ru electrode grown at 250 C by atomic-layer deposition SK Kim, WD Kim, KM Kim, CS Hwang, J Jeong Applied Physics Letters 85 (18), 4112-4114, 2004	410	2004
An artificial nociceptor based on a diffusive memristor JH Yoon, Z Wang, KM Kim, H Wu, V Ravichandran, Q Xia, CS Hwang, ... Nature communications 9 (1), 417, 2018	402	2018
Memristors for energy‐efficient new computing paradigms DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang Advanced Electronic Materials 2 (9), 1600090, 2016	399	2016
First-principles study on doping and phase stability of CK Lee, E Cho, HS Lee, CS Hwang, S Han Physical Review B—Condensed Matter and Materials Physics 78 (1), 012102, 2008	392	2008
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: A comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017	357	2017
The fundamentals and applications of ferroelectric HfO₂ U Schroeder, MH Park, T Mikolajick, CS Hwang Nature Reviews Materials 7 (8), 653-669, 2022	356	2022

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