Pristavu Gheorghe
Pristavu Gheorghe
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Citat de
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Variable off-time control loop for current-mode floating buck converters in LED driving applications
V Anghel, C Bartholomeusz, AG Vasilica, G Pristavu, G Brezeanu
IEEE Journal of Solid-State Circuits 49 (7), 1571-1579, 2014
Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior
G Brezeanu, G Pristavu, F Draghici, M Badila, R Pascu
Journal of Applied Physics 122 (8), 2017
Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing
G Pristavu, G Brezeanu, R Pascu, F Drăghici, M Bădilă
Materials Science in Semiconductor Processing 94, 64-69, 2019
A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures
G Pristavu, G Brezeanu, M Badila, R Pascu, M Danila, P Godignon
Applied Physics Letters 106 (26), 2015
400° C sensor based on Ni/4H-SiC Schottky diode for reliable temperature monitoring in industrial environments
F Draghici, G Brezeanu, G Pristavu, R Pascu, M Badila, A Pribeanu, ...
Sensors 19 (10), 2384, 2019
High temperature sensors based on silicon carbide (SiC) devices
G Brezeanu, M Badila, F Draghici, R Pascu, G Pristavu, F Craciunoiu, ...
2015 International Semiconductor Conference (CAS), 3-10, 2015
60–700 K CTAT and PTAT temperature sensors with 4H-SiC Schottky diodes
R Pascu, G Pristavu, G Brezeanu, F Draghici, P Godignon, C Romanitan, ...
Sensors 21 (3), 942, 2021
Two packaging solutions for high temperature SiC diode sensors
G Brezeanu, F Draghici, M Badila, F Craciunoiu, G PRISTAVU, R Pascu, ...
Materials Science Forum 778, 1063-1066, 2014
Barrier stability of Pt/4H-SiC schottky diodes used for high temperature sensing
G Pristavu, G Brezeanu, M Badila, F Draghici, R Pascu, F Craciunoiu, ...
Materials Science Forum 897, 606-609, 2017
Oxide trap states versus gas sensing in SiC-MOS capacitors–The effect of N-and P-based post oxidation processes
R Pascu, F Craciunoiu, G Pristavu, G Brezeanu, M Kusko
Sensors and Actuators B: Chemical 245, 911-922, 2017
A new 4H-SiC hydrogen sensor with oxide ramp termination
R Pascu, M Kusko, F Craciunoiu, G Pristavu, G Brezeanu, M Badila, ...
Materials Science in Semiconductor Processing 42, 268-272, 2016
Temperature behavior of 4H-SiC MOS capacitor used as a gas sensor
R Pascu, G Pristavu, M Badila, G Brezeanu, F Draghici, F Craciunoiu
2014 International Semiconductor Conference (CAS), 185-188, 2014
Enhanced non-uniformity modeling of 4H-SiC Schottky diode characteristics over wide high temperature and forward bias ranges
G Brezeanu, G Pristavu, F Draghici, R Pascu, F Della Corte, S Rascuna
IEEE Journal of the Electron Devices Society 8, 1339-1344, 2020
Offset cancellation in bandgap references with CMOS operational amplifiers
AG Vasilica, G Pristavu, C Pasoi, G Brezeanu
CAS 2011 Proceedings (2011 International Semiconductor Conference) 2, 421-424, 2011
SiO2/4H-SiC interface states reduction by POCl3 post-oxidation annealing
R Pascu, F Craciunoiu, M Kusko, M Mihaila, G Pristavu, M Badila, ...
2015 International Semiconductor Conference (CAS), 255-258, 2015
Suppressing start-up time variation versus load current—Adaptive soft-start in boost LED drivers
A Vasilica, V Anghel, G Pristavu, G Brezeanu
ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015
4H-SiC Schottky contact improvement for temperature sensor applications
F Draghici, M Badila, G Brezeanu, G Pristavu, I Rusu, F Craciunoiu, ...
CAS 2013 (International Semiconductor Conference) 2, 163-166, 2013
Variable off time current-mode floating buck controller-A different approach
V Anghel, C Bartholomeusz, G Pristavu, G Brezeanu
2013 Proceedings of the ESSCIRC (ESSCIRC), 347-350, 2013
Electrical characterization of Ni-silicide Schottky contacts on SiC for high performance temperature sensor
R Pascu, G Pristavu, G Brezeanu, F Draghici, M Badila, I Rusu, ...
Materials Science Forum 821, 436-439, 2015
Time modulation—The exponential way
G Pristavu, C Bartholomeusz, V Anghel, G Brezeanu
CAS 2012 (International Semiconductor Conference) 2, 419-422, 2012
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