Enrico Zanoni
Enrico Zanoni
Professor, Electronics, University of Padova
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Cited by
Cited by
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
Flash memory cells-an overview
P Pavan, R Bez, P Olivo, E Zanoni
Proceedings of the IEEE 85 (8), 1248-1271, 1997
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives
G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ...
Journal of Applied Physics 114 (7), 2013
Flash memories
P Cappelletti, C Golla, P Olivo, E Zanoni
Springer Science & Business Media, 2013
Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements
D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ...
IEEE Transactions on electron devices 60 (10), 3166-3175, 2013
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ...
IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004
A review on the physical mechanisms that limit the reliability of GaN-based LEDs
M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni
IEEE Transactions on Electron Devices 57 (1), 108-118, 2009
A review on the reliability of GaN-based LEDs
M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni
IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008
GaN-based power devices: Physics, reliability, and perspectives
M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ...
Journal of Applied Physics 130 (18), 2021
Richardson’s constant in inhomogeneous silicon carbide Schottky contacts
F Roccaforte, F La Via, V Raineri, R Pierobon, E Zanoni
Journal of Applied Physics 93 (11), 9137-9144, 2003
Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni
IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006
Power GaN Devices
M Meneghini, G Meneghesso, E Zanoni
Cham: Springer International Publishing, 2017
Accelerated life test of high brightness light emitting diodes
L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ...
IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014
Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method
M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ...
IEEE transactions on electron devices 58 (9), 2996-3003, 2011
AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction
E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso
IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn
Journal of Applied Physics 106 (11), 2009
Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini
IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008
Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias
M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ...
Applied Physics Letters 100 (3), 2012
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