Tzu-Ming Lu
Tzu-Ming Lu
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Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6× 106 cm2/Vs
TM Lu, DC Tsui, CH Lee, CW Liu
Applied Physics Letters 94 (18), 2009
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
TM Lu, NC Bishop, T Pluym, J Means, PG Kotula, J Cederberg, LA Tracy, ...
Applied Physics Letters 99 (4), 2011
Atomic precision advanced manufacturing for digital electronics
DR Ward, SW Schmucker, EM Anderson, E Bussmann, L Tracy, TM Lu, ...
arXiv preprint arXiv:2002.11003, 2020
Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors
TM Lu, CH Lee, SH Huang, DC Tsui, CW Liu
Applied Physics Letters 99 (15), 2011
Valley splitting of Si∕ Si_ {1− x} Ge_ {x} heterostructures in tilted magnetic fields
K Lai, TM Lu, W Pan, DC Tsui, S Lyon, J Liu, YH Xie, M Mühlberger, ...
Physical Review B 73 (16), 161301, 2006
Single and double hole quantum dots in strained Ge/SiGe quantum wells
WJ Hardy, CT Harris, YH Su, Y Chuang, J Moussa, LN Maurer, JY Li, ...
Nanotechnology 30 (21), 215202, 2019
Mobility enhancement of strained Si by optimized SiGe/Si/SiGe structures
SH Huang, TM Lu, SC Lu, CH Lee, CW Liu, DC Tsui
Applied Physics Letters 101, 042111, 2012
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
YH Su, Y Chuang, CY Liu, JY Li, TM Lu
Physical Review Materials 1 (4), 044601, 2017
Scattering mechanisms in shallow undoped Si/SiGe quantum wells
D Laroche, SH Huang, E Nielsen, Y Chuang, JY Li, CW Liu, TM Lu
AIP Advances 5 (10), 2015
Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure
D Laroche, SH Huang, Y Chuang, JY Li, CW Liu, TM Lu
Applied Physics Letters 108 (23), 2016
Cyclotron mass of two-dimensional holes in (100) oriented GaAs∕ AlGaAs heterostructures
TM Lu, ZF Li, DC Tsui, MJ Manfra, LN Pfeiffer, KW West
Applied Physics Letters 92 (1), 2008
Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors
TM Lu, W Pan, DC Tsui, CH Lee, CW Liu
Physical Review B 85 (12), 121307, 2012
All-optical lithography process for contacting nanometer precision donor devices
DR Ward, MT Marshall, DM Campbell, TM Lu, JC Koepke, ...
Applied Physics Letters 111 (19), 2017
Electron spin lifetime of a single antimony donor in silicon
LA Tracy, TM Lu, NC Bishop, GA Ten Eyck, T Pluym, JR Wendt, MP Lilly, ...
Applied Physics Letters 103 (14), 2013
Capacitively induced high mobility two-dimensional electron gas in undoped Si∕ Si1− xGex heterostructures with atomic-layer-deposited dielectric
TM Lu, J Liu, J Kim, K Lai, DC Tsui, YH Xie
Applied physics letters 90 (18), 2007
Effective g factor of low-density two-dimensional holes in a Ge quantum well
TM Lu, CT Harris, SH Huang, Y Chuang, JY Li, CW Liu
Applied Physics Letters 111 (10), 2017
Induced superconducting pairing in integer quantum Hall edge states
M Hatefipour, JJ Cuozzo, J Kanter, WM Strickland, CR Allemang, TM Lu, ...
Nano Letters 22 (15), 6173-6178, 2022
Designing nanomagnet arrays for topological nanowires in silicon
LN Maurer, JK Gamble, L Tracy, S Eley, TM Lu
Physical Review Applied 10 (5), 054071, 2018
In-plane field magnetoresistivity of Si two-dimensional electron gas in Si/SiGe quantum wells at 20 mK
TM Lu, L Sun, DC Tsui, S Lyon, W Pan, M Mühlberger, F Schäffler, J Liu, ...
Physical Review B 78 (23), 233309, 2008
Undoped high mobility two-dimensional hole-channel GaAs∕ AlxGa1− xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric
TM Lu, DR Luhman, K Lai, DC Tsui, LN Pfeiffer, KW West
Applied Physics Letters 90 (11), 2007
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