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Hyunsang Hwang
Hyunsang Hwang
POSTECH, Korea
Adresă de e-mail confirmată pe postech.ac.kr - Pagina de pornire
Titlu
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Citat de
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Neuromorphic computing using non-volatile memory
GW Burr, RM Shelby, A Sebastian, S Kim, S Kim, S Sidler, K Virwani, ...
Advances in Physics: X 2 (1), 89-124, 2017
12082017
Experimental demonstration and tolerancing of a large-scale neural network (165 000 synapses) using phase-change memory as the synaptic weight element
GW Burr, RM Shelby, S Sidler, C Di Nolfo, J Jang, I Boybat, RS Shenoy, ...
IEEE Transactions on Electron Devices 62 (11), 3498-3507, 2015
10862015
Organic core-sheath nanowire artificial synapses with femtojoule energy consumption
W Xu, SY Min, H Hwang, TW Lee
Science advances 2 (6), e1501326, 2016
4922016
Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems
J Woo, K Moon, J Song, S Lee, M Kwak, J Park, H Hwang
IEEE Electron Device Letters 37 (8), 994-997, 2016
4702016
Access devices for 3D crosspoint memory
GW Burr, RS Shenoy, K Virwani, P Narayanan, A Padilla, B Kurdi, ...
Journal of Vacuum Science & Technology B 32 (4), 2014
4122014
Excellent Selector Characteristics of Nanoscalefor High-Density Bipolar ReRAM Applications
M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ...
IEEE Electron Device Letters 32 (11), 1579-1581, 2011
3382011
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ...
Nanotechnology 22 (25), 254023, 2011
3142011
Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron
M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee
IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014
3062014
Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems
JW Jang, S Park, GW Burr, H Hwang, YH Jeong
IEEE Electron Device Letters 36 (5), 457-459, 2015
2802015
Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
H Hwang, W Ting, B Maiti, DL Kwong, J Lee
Applied physics letters 57 (10), 1010-1011, 1990
2711990
Three‐dimensional integration of organic resistive memory devices
S Song, B Cho, TW Kim, Y Ji, M Jo, G Wang, M Choe, YH Kahng, ...
Advanced Materials 22 (44), 5048-5052, 2010
2502010
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang
IEEE Electron Device Letters 38 (6), 732-735, 2017
2492017
Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures
R Dong, DS Lee, WF Xiang, SJ Oh, DJ Seong, SH Heo, HJ Choi, ...
Applied physics letters 90 (4), 2007
2352007
Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
D Lee, H Choi, H Sim, D Choi, H Hwang, MJ Lee, SA Seo, IK Yoo
IEEE electron device letters 26 (10), 719-721, 2005
2292005
RRAM-based synapse for neuromorphic system with pattern recognition function
S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ...
2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012
2222012
Ferroelectric materials for neuromorphic computing
S Oh, H Hwang, IK Yoo
Apl Materials 7 (9), 2019
2112019
Rewritable switching of one diode-one resistor nonvolatile organic memory devices
B Cho, TW Kim, S Song, Y Ji, M Jo, H Hwang, GY Jung, T Lee
Advanced Materials 22 (11), 1228, 2010
2092010
RRAM-based synapse devices for neuromorphic systems
K Moon, S Lim, J Park, C Sung, S Oh, J Woo, J Lee, H Hwang
Faraday discussions 213, 421-451, 2019
2082019
Perspective: A review on memristive hardware for neuromorphic computation
C Sung, H Hwang, IK Yoo
Journal of Applied Physics 124 (15), 2018
2042018
TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic …
J Park, M Kwak, K Moon, J Woo, D Lee, H Hwang
IEEE Electron Device Letters 37 (12), 1559-1562, 2016
2012016
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