| Metal oxide semiconductor structure using oxygen-terminated diamond G Chicot, A Maréchal, R Motte, P Muret, E Gheeraert, J Pernot Applied Physics Letters 102 (24), 2013 | 69 | 2013 |
| Deep depletion concept for diamond MOSFET TT Pham, N Rouger, C Masante, G Chicot, F Udrea, D Eon, E Gheeraert, ... Applied Physics Letters 111 (17), 2017 | 59 | 2017 |
| Hole transport in boron delta-doped diamond structures G Chicot, TN Tran Thi, A Fiori, F Jomard, E Gheeraert, E Bustarret, ... Applied Physics Letters 101 (16), 2012 | 49 | 2012 |
| Optimal drift region for diamond power devices G Chicot, D Eon, N Rouger Diamond and Related Materials 69, 68-73, 2016 | 43 | 2016 |
| Critical boron-doping levels for generation of dislocations in synthetic diamond MP Alegre, D Araujo, A Fiori, JC Pinero, F Lloret, MP Villar, P Achatz, ... Applied Physics Letters 105 (17), 2014 | 38 | 2014 |
| Boron incorporation issues in diamond when TMB is used as precursor: Toward extreme doping levels PN Volpe, JC Arnault, N Tranchant, G Chicot, J Pernot, F Jomard, ... Diamond and Related Materials 22, 136-141, 2012 | 38 | 2012 |
| Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures G Chicot, A Fiori, PN Volpe, TN Tran Thi, JC Gerbedoen, J Bousquet, ... Journal of Applied Physics 116 (8), 2014 | 37 | 2014 |
| Diamond semiconductor performances in power electronics applications G Perez, A Maréchal, G Chicot, P Lefranc, PO Jeannin, D Eon, N Rouger Diamond and Related Materials 110, 108154, 2020 | 32 | 2020 |
| In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures A Fiori, TNT Thi, G Chicot, F Jomard, F Omnès, E Gheeraert, E Bustarret Diamond and related materials 24, 175-178, 2012 | 32 | 2012 |
| Improved depth resolution of secondary ion mass spectrometry profiles in diamond: A quantitative analysis of the delta-doping A Fiori, F Jomard, T Teraji, G Chicot, E Bustarret Thin Solid Films 557, 222-226, 2014 | 31 | 2014 |
| 200V, 4MV/cm lateral diamond MOSFET TT Pham, J Pernot, C Masante, D Eon, E Gheeraert, G Chicot, F Udrea, ... 2017 IEEE International Electron Devices Meeting (IEDM), 25.4. 1-25.4. 4, 2017 | 27 | 2017 |
| Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter G Perez, G Chicot, Y Avenas, P Lefranc, PO Jeannin, D Eon, N Rouger Diamond and Related Materials 78, 83-87, 2017 | 27 | 2017 |
| Comparison of three e-beam techniques for electric field imaging and carrier diffusion length measurement on the same nanowires F Donatini, A de Luna Bugallo, P Tchoulfian, G Chicot, C Sartel, V Sallet, ... Nano Letters 16 (5), 2938-2944, 2016 | 25 | 2016 |
| Spectroscopic ellipsometry of homoepitaxial diamond multilayers and delta-doped structures J Bousquet, G Chicot, D Eon, E Bustarret Applied Physics Letters 104 (2), 2014 | 22 | 2014 |
| Oxygen vacancy and EC− 1 eV electron trap in ZnO G Chicot, P Muret, JL Santailler, G Feuillet, J Pernot Journal of Physics D: Applied Physics 47 (46), 465103, 2014 | 21 | 2014 |
| H-Terminated diamond surface band bending characterization by angle-resolved XPS G Alba, D Eon, MP Villar, R Alcántara, G Chicot, J Cañas, J Letellier, ... Surfaces 3 (1), 61-71, 2020 | 16 | 2020 |
| Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior JC Piñero, D Araujo, A Traoré, G Chicot, A Maréchal, P Muret, MP Alegre, ... physica status solidi (a) 211 (10), 2367-2371, 2014 | 15 | 2014 |
| Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients K Driche, H Umezawa, N Rouger, G Chicot, E Gheeraert Japanese Journal of Applied Physics 56 (4S), 04CR12, 2017 | 11 | 2017 |
| Electronic properties of E3 electron trap in n‐type ZnO G Chicot, J Pernot, JL Santailler, C Chevalier, C Granier, P Ferret, ... physica status solidi (b) 251 (1), 206-210, 2014 | 11 | 2014 |
| Field effect in boron doped diamond G Chicot Theses, Université de Grenoble, 2013 | 9 | 2013 |
