Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper X Li, CW Magnuson, A Venugopal, RM Tromp, JB Hannon, EM Vogel, ... Journal of the American Chemical Society 133 (9), 2816-2819, 2011 | 1622 | 2011 |
Graphene films with large domain size by a two-step chemical vapor deposition process X Li, CW Magnuson, A Venugopal, J An, JW Suk, B Han, M Borysiak, ... Nano letters 10 (11), 4328-4334, 2010 | 1318 | 2010 |
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ... Applied Physics Letters 99 (12), 2011 | 1149 | 2011 |
Handbook of semiconductor manufacturing technology Y Nishi, R Doering CRC press, 2000 | 1083 | 2000 |
GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008 | 491 | 2008 |
First-principles study of metal–graphene interfaces C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho Journal of Applied Physics 108 (12), 2010 | 458 | 2010 |
Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics B Lee, SY Park, HC Kim, KJ Cho, EM Vogel, MJ Kim, RM Wallace, J Kim Applied Physics Letters 92 (20), 2008 | 364 | 2008 |
Contact resistance in few and multilayer graphene devices A Venugopal, L Colombo, EM Vogel Applied Physics Letters 96 (1), 2010 | 361 | 2010 |
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ... Applied Physics Letters 94 (16), 2009 | 315 | 2009 |
Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition J Chan, A Venugopal, A Pirkle, S McDonnell, D Hinojos, CW Magnuson, ... ACS nano 6 (4), 3224-3229, 2012 | 275 | 2012 |
Technology and metrology of new electronic materials and devices E Vogel Nature nanotechnology 2 (1), 25-32, 2007 | 255 | 2007 |
Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants. A Tarasov, S Zhang, MY Tsai, PM Campbell, S Graham, S Barlow, ... Advanced Materials (Deerfield Beach, Fla.) 27 (7), 1175-1181, 2015 | 229 | 2015 |
Modeled tunnel currents for high dielectric constant dielectrics EM Vogel, KZ Ahmed, B Hornung, WK Henson, PK McLarty, G Lucovsky, ... IEEE Transactions on Electron Devices 45 (6), 1350-1355, 1998 | 225 | 1998 |
Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors SM Koo, MD Edelstein, Q Li, CA Richter, EM Vogel Nanotechnology 16 (9), 1482, 2005 | 196 | 2005 |
Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors WK Henson, KZ Ahmed, EM Vogel, JR Hauser, JJ Wortman, RD Venables, ... IEEE Electron Device Letters 20 (4), 179-181, 1999 | 196 | 1999 |
Half-cycle atomic layer deposition reaction studies of Al2O3 on In0. 2Ga0. 8As (100) surfaces M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ... Applied Physics Letters 93 (20), 2008 | 191 | 2008 |
Hebbian learning in spiking neural networks with nanocrystalline silicon TFTs and memristive synapses KD Cantley, A Subramaniam, HJ Stiegler, RA Chapman, EM Vogel IEEE Transactions on Nanotechnology 10 (5), 1066-1073, 2011 | 190 | 2011 |
Enhanced channel modulation in dual-gated silicon nanowire transistors SM Koo, Q Li, MD Edelstein, CA Richter, EM Vogel Nano letters 5 (12), 2519-2523, 2005 | 184 | 2005 |
Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors MY Tsai, A Tarasov, ZR Hesabi, H Taghinejad, PM Campbell, CA Joiner, ... ACS applied materials & interfaces 7 (23), 12850-12855, 2015 | 170 | 2015 |
Effective mobility of single-layer graphene transistors as a function of channel dimensions A Venugopal, J Chan, X Li, CW Magnuson, WP Kirk, L Colombo, RS Ruoff, ... Journal of Applied Physics 109 (10), 2011 | 163 | 2011 |