Atomic layer deposition of ultrathin copper metal films from a liquid copper (I) amidinate precursor Z Li, A Rahtu, RG Gordon Journal of The Electrochemical Society 153 (11), C787, 2006 | 290 | 2006 |
Deposition on a nanowire using atomic layer deposition D Guo, Z Li, K Wang, Z Zhang, Y Zhu US Patent 8,900,935, 2014 | 252 | 2014 |
Synthesis and characterization of copper (I) amidinates as precursors for atomic layer deposition (ALD) of copper metal Z Li, ST Barry, RG Gordon Inorganic chemistry 44 (6), 1728-1735, 2005 | 225 | 2005 |
Bonded structure employing metal semiconductor alloy bonding MG Farooq, Z Li, Z Luo, H Zhu US Patent 8,841,777, 2014 | 184 | 2014 |
High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ... 2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014 | 179 | 2014 |
Nucleation and adhesion of ALD copper on cobalt adhesion layers and tungsten nitride diffusion barriers Z Li, RG Gordon, DB Farmer, Y Lin, J Vlassak Electrochemical and Solid-State Letters 8 (7), G182, 2005 | 141 | 2005 |
Thin, continuous, and conformal copper films by reduction of atomic layer deposited copper nitride Z Li, RG Gordon Chemical Vapor Deposition 12 (7), 435-441, 2006 | 92 | 2006 |
Sealing porous low-k dielectrics with silica P De Rouffignac, Z Li, RG Gordon Electrochemical and Solid-State Letters 7 (12), G306, 2004 | 79 | 2004 |
Selectively self-assembling oxygen diffusion barrier Z Li, ALP Rotondaro, MR Visokay US Patent 8,410,559, 2013 | 60 | 2013 |
Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory Z Li, DB Farmer, MP Chudzik, KKH Wong, J Yu, Z Zhang, C Pei US Patent 8,916,435, 2014 | 48 | 2014 |
Synthesis and characterization of volatile liquid cobalt amidinates Z Li, DK Lee, M Coulter, LNJ Rodriguez, RG Gordon Dalton Transactions, 2592-2597, 2008 | 47 | 2008 |
Structure and method to make replacement metal gate and contact metal Z Li, MP Chudzik, U Kwon, F Papadatos, AH Simon, KKH Wong US Patent 8,232,148, 2012 | 45 | 2012 |
Computational study on the relative reactivities of cobalt and nickel amidinates via β-H migration J Wu, J Li, C Zhou, X Lei, T Gaffney, JAT Norman, Z Li, R Gordon, ... Organometallics 26 (11), 2803-2805, 2007 | 44 | 2007 |
A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology N Butt, K Mcstay, A Cestero, H Ho, W Kong, S Fang, R Krishnan, B Khan, ... 2010 International Electron Devices Meeting, 27.5. 1-27.5. 4, 2010 | 40 | 2010 |
Metal semiconductor alloy contact with low resistance J Yu, JB Johnson, Z Li, C Pei, M Hargrove US Patent 8,569,810, 2013 | 39 | 2013 |
In-situ FTIR study of atomic layer deposition (ALD) of copper metal films M Dai, J Kwon, E Langereis, LS Wielunski, Y Chabal, Z Li, R Gordon ECS Transactions 11 (7), 91, 2007 | 39 | 2007 |
Bonded structure with enhanced adhesion strength MG Farooq, Z Li, Z Luo, H Zhu US Patent 8,748,288, 2014 | 34 | 2014 |
Trench Silicide Contact With Low Interface Resistance C Pei, JB Johnson, Z Li, J Yu US Patent App. 12/944,018, 2012 | 33 | 2012 |
Conformal adhesion promoter liner for metal interconnects TJ Cheng, Z Li, KKH Wong, H Zhu US Patent 8,105,937, 2012 | 23 | 2012 |
Synthesis and characterization of ruthenium amidinate complexes as precursors for vapor deposition RG Gordon, BS Lim, Z Li, T Aaltonen, H Li The Open Inorganic Chemistry Journal, 2008 | 23 | 2008 |