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Zhengwen Li
Zhengwen Li
Harvard, IBM
Adresă de e-mail confirmată pe post.harvard.edu
Titlu
Citat de
Citat de
Anul
Atomic layer deposition of ultrathin copper metal films from a liquid copper (I) amidinate precursor
Z Li, A Rahtu, RG Gordon
Journal of The Electrochemical Society 153 (11), C787, 2006
2902006
Deposition on a nanowire using atomic layer deposition
D Guo, Z Li, K Wang, Z Zhang, Y Zhu
US Patent 8,900,935, 2014
2522014
Synthesis and characterization of copper (I) amidinates as precursors for atomic layer deposition (ALD) of copper metal
Z Li, ST Barry, RG Gordon
Inorganic chemistry 44 (6), 1728-1735, 2005
2252005
Bonded structure employing metal semiconductor alloy bonding
MG Farooq, Z Li, Z Luo, H Zhu
US Patent 8,841,777, 2014
1842014
High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization
CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ...
2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014
1792014
Nucleation and adhesion of ALD copper on cobalt adhesion layers and tungsten nitride diffusion barriers
Z Li, RG Gordon, DB Farmer, Y Lin, J Vlassak
Electrochemical and Solid-State Letters 8 (7), G182, 2005
1412005
Thin, continuous, and conformal copper films by reduction of atomic layer deposited copper nitride
Z Li, RG Gordon
Chemical Vapor Deposition 12 (7), 435-441, 2006
922006
Sealing porous low-k dielectrics with silica
P De Rouffignac, Z Li, RG Gordon
Electrochemical and Solid-State Letters 7 (12), G306, 2004
792004
Selectively self-assembling oxygen diffusion barrier
Z Li, ALP Rotondaro, MR Visokay
US Patent 8,410,559, 2013
602013
Self-aligned bottom plate for metal high-K dielectric metal insulator metal (MIM) embedded dynamic random access memory
Z Li, DB Farmer, MP Chudzik, KKH Wong, J Yu, Z Zhang, C Pei
US Patent 8,916,435, 2014
482014
Synthesis and characterization of volatile liquid cobalt amidinates
Z Li, DK Lee, M Coulter, LNJ Rodriguez, RG Gordon
Dalton Transactions, 2592-2597, 2008
472008
Structure and method to make replacement metal gate and contact metal
Z Li, MP Chudzik, U Kwon, F Papadatos, AH Simon, KKH Wong
US Patent 8,232,148, 2012
452012
Computational study on the relative reactivities of cobalt and nickel amidinates via β-H migration
J Wu, J Li, C Zhou, X Lei, T Gaffney, JAT Norman, Z Li, R Gordon, ...
Organometallics 26 (11), 2803-2805, 2007
442007
A 0.039um2 high performance eDRAM cell based on 32nm High-K/Metal SOI technology
N Butt, K Mcstay, A Cestero, H Ho, W Kong, S Fang, R Krishnan, B Khan, ...
2010 International Electron Devices Meeting, 27.5. 1-27.5. 4, 2010
402010
Metal semiconductor alloy contact with low resistance
J Yu, JB Johnson, Z Li, C Pei, M Hargrove
US Patent 8,569,810, 2013
392013
In-situ FTIR study of atomic layer deposition (ALD) of copper metal films
M Dai, J Kwon, E Langereis, LS Wielunski, Y Chabal, Z Li, R Gordon
ECS Transactions 11 (7), 91, 2007
392007
Bonded structure with enhanced adhesion strength
MG Farooq, Z Li, Z Luo, H Zhu
US Patent 8,748,288, 2014
342014
Trench Silicide Contact With Low Interface Resistance
C Pei, JB Johnson, Z Li, J Yu
US Patent App. 12/944,018, 2012
332012
Conformal adhesion promoter liner for metal interconnects
TJ Cheng, Z Li, KKH Wong, H Zhu
US Patent 8,105,937, 2012
232012
Synthesis and characterization of ruthenium amidinate complexes as precursors for vapor deposition
RG Gordon, BS Lim, Z Li, T Aaltonen, H Li
The Open Inorganic Chemistry Journal, 2008
232008
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