| Effects of multi-layer graphene capping on Cu interconnects CG Kang, SK Lim, S Lee, SK Lee, C Cho, YG Lee, HJ Hwang, Y Kim, ... Nanotechnology 24 (11), 115707, 2013 | 98 | 2013 |
| Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors CG Kang, YG Lee, SK Lee, E Park, C Cho, SK Lim, HJ Hwang, BH Lee Carbon 53, 182-187, 2013 | 70 | 2013 |
| Gate‐Controlled graphene–silicon Schottky junction photodetector KE Chang, TJ Yoo, C Kim, YJ Kim, SK Lee, SY Kim, S Heo, MG Kwon, ... Small 14 (28), 1801182, 2018 | 65 | 2018 |
| Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack W Park, JH Yang, CG Kang, YG Lee, HJ Hwang, C Cho, SK Lim, SC Kang, ... Nanotechnology 24 (47), 475501, 2013 | 52 | 2013 |
| Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask CG Kang, JW Kang, SK Lee, SY Lee, CH Cho, HJ Hwang, YG Lee, J Heo, ... Nanotechnology 22 (29), 295201, 2011 | 47 | 2011 |
| Graphene transfer in vacuum yielding a high quality graphene S Lee, SK Lee, CG Kang, C Cho, YG Lee, U Jung, BH Lee Carbon 93, 286-294, 2015 | 45 | 2015 |
| Intrinsic photocurrent characteristics of graphene photodetectors passivated with Al2O3 CG Kang, SK Lee, S Choe, YG Lee, CL Lee, BH Lee Optics express 21 (20), 23391-23400, 2013 | 39 | 2013 |
| Zero-bias operation of CVD graphene photodetector with asymmetric metal contacts TJ Yoo, YJ Kim, SK Lee, CG Kang, KE Chang, HJ Hwang, N Revannath, ... Acs Photonics 5 (2), 365-370, 2018 | 33 | 2018 |
| A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors YJ Kim, YG Lee, U Jung, S Lee, SK Lee, BH Lee Nanoscale 7 (9), 4013-4019, 2015 | 33 | 2015 |
| Contact resistance reduction using Fermi level de-pinning layer for MoS2 FETs W Park, Y Kim, SK Lee, U Jung, JH Yang, C Cho, YJ Kim, SK Lim, ... 2014 IEEE International Electron Devices Meeting, 5.1. 1-5.1. 4, 2014 | 33 | 2014 |
| Enhanced current drivability of CVD graphene interconnect in oxygen-deficient environment CG Kang, SK Lee, YG Lee, HJ Hwang, C Cho, SK Lim, J Heo, HJ Chung, ... IEEE electron device letters 32 (11), 1591-1593, 2011 | 28 | 2011 |
| A graphene barristor using nitrogen profile controlled ZnO Schottky contacts HJ Hwang, KE Chang, WB Yoo, CH Shim, SK Lee, JH Yang, SY Kim, ... Nanoscale 9 (7), 2442-2448, 2017 | 25 | 2017 |
| Highly sensitive wide bandwidth photodetectors using chemical vapor deposited graphene C Goo Kang, S Kyung Lee, T Jin Yoo, W Park, U Jung, J Ahn, B Hun Lee Applied Physics Letters 104 (16), 2014 | 25 | 2014 |
| Correlation of low frequency noise characteristics with the interfacial charge exchange reaction at graphene devices SK Lee, CG Kang, YG Lee, C Cho, E Park, HJ Chung, S Seo, HD Lee, ... Carbon 50 (11), 4046-4051, 2012 | 21 | 2012 |
| Intrinsic time zero dielectric breakdown characteristics of HfAlO alloys JJ Kim, M Kim, U Jung, KE Chang, S Lee, Y Kim, YG Lee, R Choi, BH Lee IEEE transactions on electron devices 60 (11), 3683-3689, 2013 | 20 | 2013 |
| Advantages of a buried-gate structure for graphene field-effect transistor SK Lee, YJ Kim, S Heo, W Park, TJ Yoo, C Cho, HJ Hwang, BH Lee Semiconductor Science and Technology 34 (5), 055010, 2019 | 17 | 2019 |
| Operation Mechanism of a MoS2/BP Heterojunction FET SK Lim, SC Kang, TJ Yoo, SK Lee, HJ Hwang, BH Lee Nanomaterials 8 (10), 797, 2018 | 17 | 2018 |
| Reduction of low‐frequency noise in multilayer MoS2 FETs using a Fermi‐level depinning layer Y Kim, W Park, JH Yang, C Cho, SK Lee, BH Lee physica status solidi (RRL)–Rapid Research Letters 10 (8), 634-638, 2016 | 16 | 2016 |
| Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern C Cho, SK Lee, JW Noh, W Park, S Lee, YG Lee, HJ Hwang, CG Kang, ... Applied Physics Letters 106 (21), 2015 | 13 | 2015 |
| Contact resistance reduction of ZnO thin film transistors (TFTs) with saw-shaped electrode W Park, SF Shaikh, JW Min, SK Lee, BH Lee, MM Hussain Nanotechnology 29 (32), 325202, 2018 | 10 | 2018 |
