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Alejandro Schulman
Alejandro Schulman
INL-International Iberian Nanotechnology Laboratory
Verified email at inl.int
Title
Cited by
Cited by
Year
Transport mechanism through metal-cobaltite interfaces
C Acha, A Schulman, M Boudard, K Daoudi, T Tsuchiya
Applied Physics Letters 109 (1), 2016
292016
Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
A Schulman, LF Lanosa, C Acha
Journal of Applied Physics 118 (4), 2015
272015
Structural, electrical and magnetic properties of epitaxial La0. 7Sr0. 3CoO3 thin films grown on SrTiO3 and LaAlO3 substrates
Z Othmen, A Schulman, K Daoudi, M Boudard, C Acha, H Roussel, ...
Applied surface science 306, 60-65, 2014
252014
Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories
A Schulman, MJ Rozenberg, C Acha
Physical Review B 86 (10), 104426, 2012
202012
Multilayer spintronic neural networks with radiofrequency connections
A Ross, N Leroux, A De Riz, D Marković, D Sanz-Hernández, J Trastoy, ...
Nature Nanotechnology 18 (11), 1273-1280, 2023
182023
Transport properties of resistive switching in Ag/Pr0. 6Ca0. 4MnO3/Al thin film structures
V Lähteenlahti, A Schulman, H Huhtinen, P Paturi
Journal of Alloys and Compounds 786, 84-90, 2019
152019
Strain dependence of the physical properties of epitaxial La0. 7Ca0. 3MnO3 thin films grown on LaAlO3 substrates
S El Helali, K Daoudi, M Boudard, A Schulman, C Acha, H Roussel, ...
Journal of Alloys and Compounds 655, 327-335, 2016
152016
Electron Doping Effect in the Resistive Switching Properties of Al/Gd1–xCaxMnO3/Au Memristor Devices
V Lahteenlahti, A Schulman, A Beiranvand, H Huhtinen, P Paturi
ACS Applied Materials & Interfaces 13 (15), 18365-18371, 2021
102021
Resistive switching effects on the spatial distribution of phases in metal–complex oxide interfaces
A Schulman, C Acha
Physica B: Condensed Matter 407 (16), 3147-3149, 2012
102012
Appearance of glassy ferromagnetic behavior in Gd1-xCaxMnO3 (0⩽ x⩽ 1) thin films: A revised phase diagram
A Schulman, A Beiranvand, V Lähteenlahti, H Huhtinen, P Paturi
Journal of Magnetism and Magnetic Materials 498, 166149, 2020
82020
Cyclic electric field stress on bipolar resistive switching devices
A Schulman, C Acha
Journal of Applied Physics 114 (24), 2013
72013
The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers
AS Jenkins, L Martins, LC Benetti, A Schulman, P Anacleto, MS Claro, ...
Communications Materials 5 (1), 7, 2024
42024
Sign-changing non-monotonic voltage gain of HfO2/Parylene-C/SrTiO3 field-effect transistor due to percolative insulator to two-dimensional metal transition
A Schulman, A Kitoh, P Stoliar, IH Inoue
Applied Physics Letters 110 (1), 2017
42017
Tuned AFM–FM coupling by the formation of vacancy complex in Gd0. 6Ca0. 4MnO3 thin film lattice
A Beiranvand, MO Liedke, C Haalisto, V Lähteenlahti, A Schulman, ...
Journal of Physics: Condensed Matter 33 (25), 255803, 2021
32021
STDP synapse with outstanding stability based on a novel insulator-to-metal transition FET
P Stoliar, A Schulman, A Kitoh, A Sawa, IH Inoue
2017 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2017
32017
Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties
A Schulman, E Paz, T Böhnert, AS Jenkins, R Ferreira
Advanced Functional Materials 33 (46), 2305238, 2023
22023
Compact modeling and SPICE simulation of GCMO-based resistive switching devices
E Miranda, V Lähteenlahti, H Huhtinen, A Schulman, P Paturi
IEEE Transactions on Nanotechnology 21, 285-288, 2022
22022
Metastable ferromagnetic flux closure-type domains in strain relaxed Gd0. 1Ca0. 9MnO3 thin films
A Schulman, H Palonen, V Lähteenlahti, A Beiranvand, H Huhtinen, ...
Journal of Physics: Condensed Matter 33 (3), 035803, 2020
22020
Classification of multi-frequency RF signals by extreme learning, using magnetic tunnel junctions as neurons and synapses
N Leroux, D Marković, D Sanz-Hernández, J Trastoy, P Bortolotti, ...
APL Machine Learning 1 (3), 2023
12023
Enhancing spin-transfer torque in magnetic tunnel junction devices: Exploring the influence of capping layer materials and thickness on device characteristics
T Sadat Parvini, E Paz, T Böhnert, A Schulman, L Benetti, F Oberbauer, ...
Journal of Applied Physics 133 (24), 2023
12023
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