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Chando Park
Chando Park
Qualcomm, carnegie Mellon university, western digital
Adresă de e-mail confirmată pe amat.com
Titlu
Citat de
Citat de
Anul
Magnetic tunnel junctions
JGJ Zhu, C Park
Materials today 9 (11), 36-45, 2006
5022006
Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
M Wang, W Cai, D Zhu, Z Wang, J Kan, Z Zhao, K Cao, Z Wang, Y Zhang, ...
Nature electronics 1 (11), 582-588, 2018
3362018
Co∕ Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy
JH Park, C Park, T Jeong, MT Moneck, NT Nufer, JG Zhu
Journal of Applied Physics 103 (7), 2008
1702008
Magnetic etch-stop layer for magnetoresistive read heads
M Pakala, R Xiao, C Park
US Patent 8,611,055, 2013
1632013
Method and system for providing a read sensor having a low magnetostriction free layer
Q Leng, C Park, Y Guo, C Kaiser, M Pakala, S Mao
US Patent 8,194,365, 2012
1632012
Method for providing a magnetic recording transducer
C Park, Q Leng, M Pakala
US Patent 8,381,391, 2013
1592013
Spin tunneling magnetic element promoting free layer crystal growth from a barrier layer interface
M Pakala, C Park
US Patent 8,559,141, 2013
1572013
Method and system for providing a magnetic transducer having improved shield-to-shield spacing
C Park, Q Leng, S Oh, M Pakala
US Patent 8,537,502, 2013
1502013
Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)
C Park, K Lee, SH Kang
US Patent 9,379,314, 2016
1272016
Cooking oven
R Allera, G Franzetti, M Maritan, S Sanna, M Maroni, D Ward, G Rocco, ...
US Patent 6,545,251, 2003
126*2003
Interfacial and annealing effects on magnetic properties of CoFeB thin films
YH Wang, WC Chen, SY Yang, KH Shen, C Park, MJ Kao, MJ Tsai
Journal of applied physics 99 (8), 2006
1202006
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang
US Patent 9,634,237, 2017
1062017
Annealing effects on structural and transport properties of rf-sputtered CoFeB∕ MgO∕ CoFeB magnetic tunnel junctions
C Park, JG Zhu, MT Moneck, Y Peng, DE Laughlin
Journal of applied physics 99 (8), 2006
1012006
A study on practically unlimited endurance of STT-MRAM
JJ Kan, C Park, C Ching, J Ahn, Y Xie, M Pakala, SH Kang
IEEE Transactions on Electron Devices 64 (9), 3639-3646, 2017
862017
Magnetoresistance of polycrystalline Fe3O4 films prepared by reactive sputtering at room temperature
C Park, Y Peng, JG Zhu, DE Laughlin, RM White
Journal of applied physics 97 (10), 2005
802005
Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch
Y Lu, C Park, WC Chen
US Patent 9,269,893, 2016
752016
Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications
Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015
702015
Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM
M Gottwald, JJ Kan, K Lee, X Zhu, C Park, SH Kang
Applied Physics Letters 106 (3), 2015
692015
Spin-transfer switching in MgO-based magnetic tunnel junctions
Z Diao, M Pakala, A Panchula, Y Ding, D Apalkov, LC Wang, E Chen, ...
Journal of Applied Physics 99 (8), 2006
65*2006
Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance
JJ Kan, C Park, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ...
2016 IEEE International Electron Devices Meeting (IEDM), 27.4. 1-27.4. 4, 2016
632016
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